圖片僅供參考
NTMFS5C612NLT1G
MOSFET N-CH 60V 36A/235A 5DFN
- 製造商
- 製造商。 部分 #NTMFS5C612NLT1G
- 包 QFN-8
- 資料表
- 有現貨的2368
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 36A (Ta), 235A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.5mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6660 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 167W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
概述
Description
The NTMFS5C612NLT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. With a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 80A, it is well-suited for use in power supplies, motor control, and DC-DC converter circuits.
This MOSFET features a low on-resistance (RDS(on)) value, which minimizes power losses during operation, thereby enhancing overall efficiency. It typically offers fast switching speeds, which are advantageous in applications requiring quick response times.
The device comes in a TO-220 package, allowing for effective heat dissipation and easy mounting on PCBs. Its built-in body diode ensures protection against reverse polarity.
Overall, the NTMFS5C612NLT1G is a versatile component ideal for engineers looking to improve the performance of their electronic designs in various power applications.
This MOSFET features a low on-resistance (RDS(on)) value, which minimizes power losses during operation, thereby enhancing overall efficiency. It typically offers fast switching speeds, which are advantageous in applications requiring quick response times.
The device comes in a TO-220 package, allowing for effective heat dissipation and easy mounting on PCBs. Its built-in body diode ensures protection against reverse polarity.
Overall, the NTMFS5C612NLT1G is a versatile component ideal for engineers looking to improve the performance of their electronic designs in various power applications.
Features
The NTMFS5C612NLT1G is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated at 30A at room temperature.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 6.0 mΩ at V_GS = 10V, which enhances efficiency and reduces heat generation.
4. Switching Speed: The device offers fast switching capabilities, making it suitable for high-frequency applications.
5. Package: Available in a compact SO-8 package, facilitating space-saving designs.
6. Thermal Performance: It features good thermal characteristics, which support higher power applications.
7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with various gate drive levels.
This combination of features makes the NTMFS5C612NLT1G suitable for DC-DC converters, motor drives, and other power management systems.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated at 30A at room temperature.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 6.0 mΩ at V_GS = 10V, which enhances efficiency and reduces heat generation.
4. Switching Speed: The device offers fast switching capabilities, making it suitable for high-frequency applications.
5. Package: Available in a compact SO-8 package, facilitating space-saving designs.
6. Thermal Performance: It features good thermal characteristics, which support higher power applications.
7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with various gate drive levels.
This combination of features makes the NTMFS5C612NLT1G suitable for DC-DC converters, motor drives, and other power management systems.
Package
The NTMFS5C612NLT1G is packaged in a SO-8 (Small Outline 8) package type, which is a surface-mount format commonly used for integrated circuits and power MOSFETs.
Pinout
The NTMFS5C612NLT1G is a N-channel MOSFET with a pin count of 8. It features low on-resistance and fast switching capabilities, making it suitable for various applications, including power management and switching circuits.
### Pin Functions:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn the device on/off.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current enters; usually connected to ground in low-side switching.
4. Drain (D): There are two drain pins for improved thermal performance and current handling.
### Additional Pins:
- Body Diode: Integrated for reverse current conduction.
This device is commonly used in load switching, power supplies, and DC-DC converters, thanks to its high efficiency and robust performance characteristics.
### Pin Functions:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn the device on/off.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current enters; usually connected to ground in low-side switching.
4. Drain (D): There are two drain pins for improved thermal performance and current handling.
### Additional Pins:
- Body Diode: Integrated for reverse current conduction.
This device is commonly used in load switching, power supplies, and DC-DC converters, thanks to its high efficiency and robust performance characteristics.
Manufacturer
The NTMFS5C612NLT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital solutions for various applications. The company serves multiple industries, such as automotive, industrial, communications, and consumer electronics. It focuses on energy efficiency and sustainability in its products, contributing to the growing demand for innovative technologies in a variety of electronic applications.
Application
The NTMFS5C612NLT1G is a N-channel MOSFET used in various applications, including power management systems, DC-DC converters, motor drives, and battery management systems. Its features make it suitable for high-efficiency switching and amplification in consumer electronics, automotive applications, and renewable energy systems, particularly in low-voltage applications.
Equivalent
The NTMFS5C612NLT1G is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and STP16NF06. Always check specifications like voltage, current ratings, and Rds(on) to ensure compatibility with your application.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX25U25645GXDI00
Macronix