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NTMFS5C460NLT1G

Name: NTMFS5C460NLT1G
Rating: 4.7 (12 reviews)

MOSFET N-CH 40V 5DFN

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資料表 NTMFS5C460NLT1G DataSheet
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規格

Supplier	onsemi,Rochester Electronics, LLC
Package	Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	40 V
Current-ContinuousDrain(Id)@25°C	78A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	4.5mOhm @ 35A, 10V
Vgs(th)(Max)@Id	2V @ 250µA
GateCharge(Qg)(Max)@Vgs	23 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1300 pF @ 20 V
PowerDissipation(Max)	3.6W (Ta), 50W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	5-DFN (5x6) (8-SOFL)

概述

Description

The NTMFS5C460NLT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)), which minimizes conduction losses, making it ideal for use in power supplies, DC-DC converters, and motor drives.
Key specifications include a maximum continuous drain current of 60A and a maximum drain-source voltage of 60V. Its low gate charge (Qg) allows for faster switching speeds, reducing energy loss during operation. The device is packaged in a TO-220 style, facilitating effective heat dissipation.
Additionally, the NTMFS5C460NLT1G is characterized by its robustness and reliability, making it suitable for automotive and industrial applications. With a high threshold voltage and low gate-to-source leakage current, it ensures efficient performance in various conditions.
Overall, this MOSFET is a versatile component for engineers looking to enhance power efficiency and thermal management in electronic circuits.

Features

The NTMFS5C460NLT1G is an N-channel MOSFET designed for high efficiency and fast switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 60A, providing robust performance in demanding conditions.
3. R_DS(on): It offers a low on-resistance of approximately 12 mΩ at V_GS = 10V, enhancing power efficiency and reducing heat generation.
4. Package: The MOSFET is housed in a TO-220 package, which facilitates effective heat dissipation.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling easy drive with standard logic levels.
6. Switching Speed: Fast switching capabilities make it suitable for applications like DC-DC converters and motor control.
Overall, the NTMFS5C460NLT1G is ideal for applications requiring high power efficiency and thermal performance.

Package

The NTMFS5C460NLT1G is packaged in a surface-mount SO-8 (Small Outline 8) package type. This compact package design is suitable for various applications, providing efficient thermal performance and space-saving benefits.

Pinout

The NTMFS5C460NLT1G is a N-channel MOSFET with a pin count of 4. Its functions include serving as a switch in power management applications, particularly in DC-DC converters, load switching, and other high-efficiency switching applications.
The pins are typically configured as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where current flows out when the device is on.
3. Source (S): The input terminal where current flows in when the device is on.
4. Body (substrate): Internally connected to the source.
This MOSFET is characterized by low on-resistance, high-speed switching capabilities, and is designed to handle high current and voltage levels, making it suitable for various power applications.

Manufacturer

The NTMFS5C460NLT1G is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, offering a wide range of products for various applications including automotive, industrial, and consumer electronics. The company is known for its focus on efficiency, reliability, and high-quality manufacturing processes. Nexperia was formed as a spinoff from NXP Semiconductors and has since established itself as a key player in the semiconductor industry, providing robust solutions for modern electronic designs.

Application

The NTMFS5C460NLT1G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor control, and load switching. Its low on-resistance and high efficiency make it suitable for use in power supplies, battery management systems, and automotive electronics.

Equivalent

The NTMFS5C460NLT1G is an N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and STP16NF06. Always verify specifications such as voltage, current rating, and package type to ensure compatibility for your specific application.