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NTMFS4927NT1G
MOSFET N-CH 30V 7.9A/38A 5DFN
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規格
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 7.9A (Ta), 38A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 7.3mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 16 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 913 pF @ 15 V |
| PowerDissipation(Max) | 920mW (Ta), 20.8W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
概述
Description
NTMFS4927NT1G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It is part of the NTMFS series, which typically features low on-resistance and efficient switching capabilities, making it suitable for power management in various electronic devices. The device has a significant current handling capacity and is often used in applications such as power supplies, DC-DC converters, and motor drives. Its compact size and high efficiency make it ideal for consumer electronics, automotive, and industrial applications. Key specifications usually include a maximum drain-source voltage (Vds), a maximum continuous drain current (Id), and a low gate threshold voltage (Vgs). Understanding the datasheet is crucial for proper implementation in circuits to ensure optimal performance and reliability.
Features
The NTMFS4927NT1G is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 62A, making it ideal for high current applications.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power losses.
4. Package Type: Packaged in a DPAK, it allows for efficient thermal management and ease of integration into circuits.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for operation with low gate drive voltages.
6. Fast Switching: The MOSFET is designed for fast switching capabilities, making it suitable for applications like DC-DC converters and motor drivers.
Overall, the NTMFS4927NT1G is a versatile component for efficient power management in electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 62A, making it ideal for high current applications.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power losses.
4. Package Type: Packaged in a DPAK, it allows for efficient thermal management and ease of integration into circuits.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1V to 2.5V, allowing for operation with low gate drive voltages.
6. Fast Switching: The MOSFET is designed for fast switching capabilities, making it suitable for applications like DC-DC converters and motor drivers.
Overall, the NTMFS4927NT1G is a versatile component for efficient power management in electronics.
Package
The NTMFS4927NT1G is packaged in a SO-8 (Small Outline 8) surface mount package. This type of packaging is designed for compactness and efficient thermal performance, suitable for various applications in electronic circuits.
Pinout
The NTMFS4927NT1G is an N-channel MOSFET used in various applications such as power management and switching circuits. It comes in a TO-220 package, which features a total of 3 pins.
The pin functions are as follows:
1. Gate (G): This pin receives the control signal that turns the MOSFET on or off.
2. Drain (D): This pin connects to the load and receives the current when the device is on.
3. Source (S): This pin serves as the return path for the current flowing from the drain to ground.
The NTMFS4927NT1G is designed for high efficiency, with low on-resistance and fast switching capabilities, making it suitable for applications such as DC-DC converters and motor drives.
The pin functions are as follows:
1. Gate (G): This pin receives the control signal that turns the MOSFET on or off.
2. Drain (D): This pin connects to the load and receives the current when the device is on.
3. Source (S): This pin serves as the return path for the current flowing from the drain to ground.
The NTMFS4927NT1G is designed for high efficiency, with low on-resistance and fast switching capabilities, making it suitable for applications such as DC-DC converters and motor drives.
Manufacturer
The NTMFS4927NT1G is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor focuses on providing a wide range of products, including analog, digital, and mixed-signal semiconductors, as well as power management and connectivity solutions. The company serves various markets such as automotive, industrial, consumer electronics, communications, and computing. ON Semiconductor is known for its commitment to innovation and sustainability in the semiconductor industry.
Application
The NTMFS4927NT1G is a N-channel MOSFET widely used in applications such as power management, DC-DC converters, motor drivers, and load switching. Its low on-resistance and fast switching capabilities make it suitable for use in power supplies, battery management systems, and consumer electronics. Additionally, it can be utilized in high-frequency applications due to its efficient thermal performance.
Equivalent
The NTMFS4927NT1G is an N-channel MOSFET. Equivalent products include the BSS138, IRF540, and SI2302. However, ensure to compare specifications like voltage, current ratings, and RDS(on) to confirm compatibility for your specific application. Always consult the datasheet for detailed characteristics.
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