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NTMFS4841NHT1G
MOSFET N-CH 30V 8.6A/59A 5DFN
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規格
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 8.6A (Ta), 59A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 33 nC @ 11.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2113 pF @ 12 V |
| PowerDissipation(Max) | 870mW (Ta), 41.7W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
概述
Description
NTMFS4841NHT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management applications. It features a low on-resistance (R_DS(on)), which enhances efficiency and reduces heat generation during operation. The device is commonly used in applications such as DC-DC converters, motor drives, and power management systems due to its ability to handle high current levels while maintaining low voltage drops.
The NTMFS4841NHT1G operates at a gate voltage of 10V and has a maximum continuous drain current rating, making it suitable for demanding power applications. Its compact package design (SO-8) allows for efficient PCB space utilization. The device also offers fast switching capabilities, improving the overall performance of power conversion circuits.
When selecting this MOSFET for a design, consider parameters such as threshold voltage, maximum drain-source voltage (V_DS), and thermal characteristics to ensure compatibility with the intended application. Overall, it is a reliable component for enhancing power efficiency in electronic circuits.
The NTMFS4841NHT1G operates at a gate voltage of 10V and has a maximum continuous drain current rating, making it suitable for demanding power applications. Its compact package design (SO-8) allows for efficient PCB space utilization. The device also offers fast switching capabilities, improving the overall performance of power conversion circuits.
When selecting this MOSFET for a design, consider parameters such as threshold voltage, maximum drain-source voltage (V_DS), and thermal characteristics to ensure compatibility with the intended application. Overall, it is a reliable component for enhancing power efficiency in electronic circuits.
Features
The NTMFS4841NHT1G is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, suitable for various power applications.
2. Current Rating: It supports a continuous drain current (ID) of up to 80A, allowing for robust performance in high-current scenarios.
3. Low On-Resistance: The on-resistance (RDS(on)) is typically low, around 4.5 mΩ at 10V, which helps minimize power loss and improve efficiency.
4. Fast Switching Speed: It offers fast switching capabilities, making it suitable for switching power supplies and DC-DC converters.
5. Package: Housed in a DPAK package, it provides good thermal performance and ease of mounting.
6. Thermal Resistance: A low thermal resistance ensures effective heat dissipation, supporting reliable operation at high currents.
These features make the NTMFS4841NHT1G suitable for automotive, industrial, and consumer electronics applications, especially in power management systems.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 40V, suitable for various power applications.
2. Current Rating: It supports a continuous drain current (ID) of up to 80A, allowing for robust performance in high-current scenarios.
3. Low On-Resistance: The on-resistance (RDS(on)) is typically low, around 4.5 mΩ at 10V, which helps minimize power loss and improve efficiency.
4. Fast Switching Speed: It offers fast switching capabilities, making it suitable for switching power supplies and DC-DC converters.
5. Package: Housed in a DPAK package, it provides good thermal performance and ease of mounting.
6. Thermal Resistance: A low thermal resistance ensures effective heat dissipation, supporting reliable operation at high currents.
These features make the NTMFS4841NHT1G suitable for automotive, industrial, and consumer electronics applications, especially in power management systems.
Package
The NTMFS4841NHT1G is packaged in a DFN (Dual Flat No-lead) format, specifically a 5mm x 6mm package. This package type is designed for efficient thermal performance and space-saving in electronic applications.
Pinout
The NTMFS4841NHT1G is an N-channel MOSFET with a total of 8 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal through which the current flows into the MOSFET.
The device typically features a low R_DS(on) for efficient switching applications, making it suitable for power management in various electronic circuits. The specific arrangement and function of pins can be referenced from the manufacturer's datasheet for details on layout and characteristics.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which the current flows out when the MOSFET is on.
3. Source (S) - The terminal through which the current flows into the MOSFET.
The device typically features a low R_DS(on) for efficient switching applications, making it suitable for power management in various electronic circuits. The specific arrangement and function of pins can be referenced from the manufacturer's datasheet for details on layout and characteristics.
Manufacturer
The NTMFS4841NHT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient electronics. The company provides a wide range of products, including power management, analog, and logic devices, as well as sensors and custom solutions for various applications. ON Semiconductor serves multiple industries, such as automotive, industrial, communications, and consumer electronics, emphasizing sustainability and innovation in their product offerings.
Application
The NTMFS4841NHT1G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switching, and power supply circuits. Its high efficiency and low on-resistance make it suitable for use in consumer electronics, automotive systems, and industrial power applications, where effective thermal performance and power density are crucial.
Equivalent
The NTMFS4841NHT1G is an N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and AO3400. It's essential to check specifications like voltage, current, Rds(on), and package type to ensure compatibility, as these equivalents may vary in performance characteristics. Always consult the datasheets for detailed comparisons.
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