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NTMD5838NLR2G
MOSFET 2N-CH 40V 7.4A 8SOIC
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規格
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Last Time Buy |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 40V |
| Current-ContinuousDrain(Id)@25°C | 7.4A |
| RdsOn(Max)@IdVgs | 25mOhm @ 7A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 17nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 785pF @ 20V |
| Power-Max | 2.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The NTMD5838NLR2G is a dual N-channel MOSFET designed for efficient switching applications. It features a low on-resistance (RDS(on)), which minimizes power loss and heat generation during operation, making it suitable for power management circuits, DC-DC converters, and motor drives.
With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 60A, the NTMD5838NLR2G is capable of handling significant power loads. Its compact package (DPAK) allows for easy integration into various circuit designs while providing efficient thermal performance.
The device is characterized by fast switching speeds, making it ideal for high-frequency applications. Its gate threshold voltage (VGS(th)) is optimized for compatibility with low-voltage logic levels, enhancing its versatility in different electronic systems.
In summary, the NTMD5838NLR2G is a reliable choice for engineers seeking a robust, efficient, and compact MOSFET solution for diverse electronic applications.
With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 60A, the NTMD5838NLR2G is capable of handling significant power loads. Its compact package (DPAK) allows for easy integration into various circuit designs while providing efficient thermal performance.
The device is characterized by fast switching speeds, making it ideal for high-frequency applications. Its gate threshold voltage (VGS(th)) is optimized for compatibility with low-voltage logic levels, enhancing its versatility in different electronic systems.
In summary, the NTMD5838NLR2G is a reliable choice for engineers seeking a robust, efficient, and compact MOSFET solution for diverse electronic applications.
Features
The NTMD5838NLR2G is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 30A, allowing it to drive loads efficiently.
3. On-Resistance: It offers a low on-resistance (Rds(on)) of approximately 8.5 mΩ at 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 1V to 3V, enabling it to be driven by low-voltage control signals.
5. Package: It is available in a DPAK package, ensuring good thermal performance and ease of mounting.
6. Fast Switching Speed: The device features fast switching capabilities, making it ideal for applications like DC-DC converters, power management systems, and motor drives.
Overall, the NTMD5838NLR2G is a robust solution for efficient power management in various electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 30A, allowing it to drive loads efficiently.
3. On-Resistance: It offers a low on-resistance (Rds(on)) of approximately 8.5 mΩ at 10V, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 1V to 3V, enabling it to be driven by low-voltage control signals.
5. Package: It is available in a DPAK package, ensuring good thermal performance and ease of mounting.
6. Fast Switching Speed: The device features fast switching capabilities, making it ideal for applications like DC-DC converters, power management systems, and motor drives.
Overall, the NTMD5838NLR2G is a robust solution for efficient power management in various electronic applications.
Package
The NTMD5838NLR2G is packaged in a SO-8 (Small Outline 8) package type, which is a surface mount device with eight leads. This package is designed for efficient thermal performance and easy assembly on printed circuit boards.
Pinout
The NTMD5838NLR2G is a dual N-channel MOSFET in a surface-mount package (DFN-6). It features a pin count of 6. The primary function of this device is to act as a switch for power management applications, providing efficient control of high-speed switching with low on-resistance (R_DS(on)). Its specifications make it suitable for use in power supply circuits, motor control, and other applications requiring efficient power handling. The device is designed to handle high voltages and currents, enabling it to drive loads effectively while minimizing thermal dissipation.
Manufacturer
The NTMD5838NLR2G is manufactured by ON Semiconductor, a prominent global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and producing a wide range of electronic components, including power management, analog, sensor, and discrete devices. The company serves various sectors, including automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on delivering innovative and sustainable solutions, emphasizing energy efficiency and reliability in their products.
Application
The NTMD5838NLR2G is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power switches in portable devices, load switching, and motor control. It is also suitable for use in automotive systems and general-purpose switching applications due to its low on-resistance and efficient thermal performance.
Equivalent
The NTMD5838NLR2G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and IRF3708. Always verify specifications such as voltage, current ratings, and package types before substitution.
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