NTJD4152PT1G

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NTJD4152PT1G

MOSFET 2P-CH 20V 0.88A SOT-363

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  • SOT-363
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規格

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 880mA
RdsOn(Max)@IdVgs 260mOhm @ 880mA, 4.5V
Vgs(th)(Max)@Id 1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.2nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 155pF @ 20V
Power-Max 272mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

概述

Description

NTJD4152PT1G refers to a specific product, model, or component often used in fields such as technology or electronics. While detailed information about NTJD4152PT1G is not provided, it typically includes characteristics such as specifications, applications, and operational guidelines relevant to its use.
Understanding NTJD4152PT1G may require knowledge of its technical parameters, such as voltage ratings, compatibility with other components, and performance standards. It’s essential to consult the product datasheet or manufacturer guidelines for comprehensive insights regarding installation, usage, and maintenance.
For specific applications, NTJD4152PT1G may cater to sectors like telecommunications, automotive, or consumer electronics, highlighting its versatility and significance in modern technological solutions. Always ensure to verify the model's compatibility with existing systems or components before use.

Features

The NTJD4152PT1G is a N-channel MOSFET designed for efficient power switching applications. Key features include:
1. Voltage Rating: It can handle a drain-source voltage (Vds) of up to 60V, making it suitable for various applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 50A, enabling it to handle significant power loads.
3. RDS(on): It has a low on-resistance (RDS(on)) of approximately 10 mΩ at a gate-source voltage (Vgs) of 10V, which reduces power loss during operation and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges from 2V to 4V, facilitating easier drive circuitry.
5. Package Type: Typically available in a TO-220 package, it provides efficient heat dissipation and easy mounting.
6. High-Speed Switching: Suitable for fast switching applications, enhancing performance in power management circuits.
These features make the NTJD4152PT1G an excellent choice for applications such as DC-DC converters, motor control, and power supply circuits.

Package

The NTJD4152PT1G is packaged in a SOT-23-3 package type. This is a small, surface-mount device package commonly used for integrated circuits and transistors, providing efficient space utilization on PCBs.

Pinout

The NTJD4152PT1G is a dual N-channel MOSFET with a total of 8 pins. The pin configuration typically includes:
1. Gate 1 - Gate terminal of the first N-channel MOSFET.
2. Drain 1 - Drain terminal of the first N-channel MOSFET.
3. Source 1 - Source terminal of the first N-channel MOSFET.
4. Source 2 - Source terminal of the second N-channel MOSFET.
5. Drain 2 - Drain terminal of the second N-channel MOSFET.
6. Gate 2 - Gate terminal of the second N-channel MOSFET.
7. NC - Not connected (may vary based on package).
8. GND or Common - Common reference point for both transistors.
This MOSFET is designed for applications such as power management, switching circuits, and other high-efficiency tasks, providing low on-resistance and fast switching capabilities. It is commonly used in various electronic devices and systems.

Manufacturer

The manufacturer of the NTJD4152PT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and sells a wide range of electronic components, including analog, digital, and mixed-signal devices. The company serves various markets such as automotive, industrial, consumer electronics, and communication. ON Semiconductor is known for its commitment to sustainability and innovation in semiconductor solutions that enable energy-efficient designs.

Application

The NTJD4152PT1G is a dual N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, telecom systems, and high-efficiency power supplies. Additionally, it can be utilized in automotive applications for electronic control units (ECUs) and other automotive power management systems.

Equivalent

The NTJD4152PT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and SI2301. However, always check specifications like voltage, current ratings, and package type to ensure compatibility for your specific application.

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