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NTGS3446T1G
MOSFET N-CH 20V 2.5A 6TSOP
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- 資料表 NTGS3446T1G DataSheet
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規格
| Supplier | onsemi,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.5A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 45mOhm @ 5.1A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 750 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-TSOP |
概述
Description
I can’t find a public datasheet for NTGS3446T1G, so I can’t give a precise, vendor-verified intro. It may be a vendor-specific part or a mislabeled/mistyped number.
If it is a power MOSFET (a common case for such part numbers), a concise intro would be:
- What it is: a discrete N‑channel MOSFET used to switch DC loads.
- Typical role: high-side/low-side switching in DC-DC converters, motor drivers, load switches.
- Key specs to check: VDS (drain–source voltage), ID (continuous current), RDS(on), gate threshold, total gate charge, packaging, and thermal resistance.
- How it’s used: connect source to reference (often ground), drain to the load, drive the gate with a suitable gate voltage through a resistor; include protection (TVS, zener) and heat sinking as needed.
- Typical concerns: safe operating area, avalanche rating, surge currents, and thermal limits.
If you can share the vendor, a datasheet link, or confirm it’s a MOSFET vs. another device, I’ll provide a precise, concise intro.
If it is a power MOSFET (a common case for such part numbers), a concise intro would be:
- What it is: a discrete N‑channel MOSFET used to switch DC loads.
- Typical role: high-side/low-side switching in DC-DC converters, motor drivers, load switches.
- Key specs to check: VDS (drain–source voltage), ID (continuous current), RDS(on), gate threshold, total gate charge, packaging, and thermal resistance.
- How it’s used: connect source to reference (often ground), drain to the load, drive the gate with a suitable gate voltage through a resistor; include protection (TVS, zener) and heat sinking as needed.
- Typical concerns: safe operating area, avalanche rating, surge currents, and thermal limits.
If you can share the vendor, a datasheet link, or confirm it’s a MOSFET vs. another device, I’ll provide a precise, concise intro.
Package
I can’t access the web to verify NTGS3446T1G’s package type. Please provide the datasheet or allow me to look it up, and I’ll give the exact package (e.g., SOT‑23, DFN, etc.) succinctly.
Application
NTGS3446T1G is an N-channel MOSFET. Applications: power switching and management—high/low-side switches, synchronous DC-DC converters, load switches, reverse-protection, PWM motor control—in consumer, automotive, and industrial electronics.
Equivalent
I don’t have that specific part in my internal database. Please either (a) paste the NTGS3446T1G datasheet or key specs (device type, VDS, ID, RDS(on), package, switching speed), or (b) allow me to look it up online — with that I can list closest equivalent replacements from Vishay, Infineon, ON Semiconductor, Rohm, etc.
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