圖片僅供參考

NTB45N06T4G

Name: NTB45N06T4G
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 45A D2PAK

製造商
製造商。部分 #NTB45N06T4G
包
資料表
有現貨的3829

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Obsolete
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	45A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	26mOhm @ 22.5A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	46 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	1725 pF @ 25 V
PowerDissipation(Max)	2.4W (Ta), 125W (Tj)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D²PAK

概述

Description

NTB45N06T4G is a 60 V N-channel enhancement-mode power MOSFET (trench design) used for switching in power electronics.
Key points:
- Voltage/current: VDS ≈ 60 V, continuous ID ~45 A; designed for high-current switching.
- On-resistance and drive: low RDS(on) for efficient conduction; suitable for fast switching with standard gate-drive voltages.
- Construction: rugged body diode for inductive loads; optimized for automotive/industrial use.
- Package/grade: automotive-grade variant (T4G) in a surface-mount power package; RoHS-compliant and often AEC-Q101 qualified.
- Applications: DC-DC converters, motor drivers, power switches, and other high-current switching circuits.
Note: Specs can vary by revision; consult the latest datasheet for exact RDS(on), VGS rating, package type, and thermal characteristics.

Features

NTB45N06T4G features:
- N-channel enhancement-mode power MOSFET
- 60 V drain–source voltage; 45 A continuous drain current
- Low on-resistance (Rds(on) in tens of milliohms)
- Trench MOSFET technology for fast switching and high efficiency
- Low gate charge for easier, faster drive; suitable for switching applications
- Rugged dv/dt and di/dt capability with avalanche energy rating
- Wide operating temperature range (typical -55°C to 150°C)
- Pb-free, halogen-free, RoHS compliant
- Package: T4G (surface-mount, DPAK/TO-263 style)

Package

I can’t verify NTB45N06T4G’s exact package without web access or the datasheet. Please provide the manufacturer or a datasheet/link and I’ll identify the precise package type for you (e.g., TO‑220, DPAK/TO‑252, TO‑263).

Pinout

- Pin count: 3 pins (plus the drain-connected tab) in a DPAK (TO-252) package.
- Pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (tab = Drain).
- Function: N-channel enhancement-mode power MOSFET for high-current switching.

Application

NTB45N06T4G is a 60 V, 45 A N-channel trench MOSFET. Common applications:
- Switch‑mode power supplies and DC‑DC converters
- Motor control (BLDC/DC motors) and driver stages
- High-side/low-side switches and smart power switches
- Automotive electronics (body/powertrain controllers)
- Solar inverters and power-management stages
- General power-switching in adapters, chargers, and consumer electronics