NTB004N10G

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NTB004N10G

MOSFET N-CH 100V 201A TO263

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規格

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 201A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.2mOhm @ 100A, 10V
Vgs(th)(Max)@Id 4V @ 500µA
GateCharge(Qg)(Max)@Vgs 175 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 11900 pF @ 50 V
PowerDissipation(Max) 340W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK-3 (TO-263-3)

概述

Description

NTB004N10G is an N-channel enhancement‑mode power MOSFET used as a switching device in power electronics. It’s typically applied in DC‑DC converters, motor drivers, load switches, and similar circuits. The device blends relatively low on‑resistance with fast switching for efficient operation and compact heat sinking, and is offered in surface‑mount power packages with a tab for heat dissipation. Gate drive must stay within the specified Vgs range, and thermal design is important for reliability. Exact electrical specs (Vds, Id, Rds(on), Vgs(th), Qg, and thermal data) depend on package and revision. For design and safe operating area guidance, consult the latest manufacturer datasheet and application notes. Handle with proper ESD precautions.

Package

I can’t reliably confirm the package type for NTB004N10G without its datasheet or a manufacturer reference. Please provide the datasheet or a link and I’ll identify the exact package (e.g., DPAK/TO-252, SOT-23, etc.).

Equivalent

I can’t provide exact equivalents without the manufacturer/datasheet. NTB004N10G appears to be a 100 V N‑channel MOSFET; please share the vendor or a PDF. If unavailable, I can guide cross‑referencing: compare Vds, Id, Rds(on), Vgs(th), package; then use DigiKey/Mouser cross-reference tools to find substitutes from ST, Vishay, Infineon, ON Semiconductor with similar specs.

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