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NT6TL128T64BR-G0
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規格
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.36 |
| Automotive | Unknown |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 0.59(Max) |
| Package Width | 12 |
| Package Length | 12 |
| PCB changed | 216 |
| Standard Package Name | BGA |
| Supplier Package | POP-FBGA |
| Pin Count | 216 |
| Lead Shape | Ball |
概述
Description
The NT6TL128T64BR-G0 is a DRAM (Dynamic Random Access Memory) chip manufactured by Nanya Technology, designed for high-performance computing applications. It typically features a 1GB capacity with a configuration of 128 megabytes x 64 bits, making it suitable for various devices requiring memory storage, such as laptops, desktops, and servers.
This DDR3 SDRAM module operates at a voltage of 1.5V, allowing for lower power consumption compared to its predecessors. It supports a data rate of up to 1600 MT/s (megatransfers per second), enhancing data transfer speeds and overall system performance. The chip is packaged in a standard FBGA (Fine Pitch Ball Grid Array) format, facilitating easy integration into electronic circuits.
Additionally, the NT6TL128T64BR-G0 complies with industry standards, ensuring reliability and compatibility with a wide range of systems. Its features make it an essential component for users looking to enhance their computing experience through improved memory performance.
This DDR3 SDRAM module operates at a voltage of 1.5V, allowing for lower power consumption compared to its predecessors. It supports a data rate of up to 1600 MT/s (megatransfers per second), enhancing data transfer speeds and overall system performance. The chip is packaged in a standard FBGA (Fine Pitch Ball Grid Array) format, facilitating easy integration into electronic circuits.
Additionally, the NT6TL128T64BR-G0 complies with industry standards, ensuring reliability and compatibility with a wide range of systems. Its features make it an essential component for users looking to enhance their computing experience through improved memory performance.
Features
The NT6TL128T64BR-G0 is a DDR3 SDRAM memory module designed for high-performance applications. Key features include:
1. Type: DDR3 SDRAM
2. Capacity: 1 Gigabit (128 Megabytes x 64)
3. Configuration: 128M x 64 bits organization
4. Speed: Operates at a data rate of 1066 MT/s (megatransfers per second)
5. Voltage: 1.5V operating voltage
6. Package: Typically available in a FBGA (Fine Ball Grid Array) package
7. Latency: Offers low latency for improved performance in various applications.
8. Applications: Suitable for use in servers, networking equipment, and other memory-intensive applications.
This module provides improved bandwidth and energy efficiency compared to earlier DDR2 modules, making it a popular choice for modern electronic systems.
1. Type: DDR3 SDRAM
2. Capacity: 1 Gigabit (128 Megabytes x 64)
3. Configuration: 128M x 64 bits organization
4. Speed: Operates at a data rate of 1066 MT/s (megatransfers per second)
5. Voltage: 1.5V operating voltage
6. Package: Typically available in a FBGA (Fine Ball Grid Array) package
7. Latency: Offers low latency for improved performance in various applications.
8. Applications: Suitable for use in servers, networking equipment, and other memory-intensive applications.
This module provides improved bandwidth and energy efficiency compared to earlier DDR2 modules, making it a popular choice for modern electronic systems.
Package
The NT6TL128T64BR-G0 is a DDR3 SDRAM memory module packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) configuration. This type of packaging provides a compact design suitable for high-density applications.
Pinout
The NT6TL128T64BR-G0 is a DRAM memory chip with a pin count of 84 pins. It is a DDR3 SDRAM device that operates at a voltage of 1.5V. This chip is organized as 128 Meg x 64 bits, providing a total memory capacity of 1GB.
The primary functions of the pins include data input/output, address, command, control signals, and power connections. Key pin functions include:
- Data Pins (DQ0-DQ63): Used for data transfer.
- Address Pins (A0-A12, BA0-BA2): Used for addressing memory locations.
- Control Pins (CK, CK#, CS#, RAS#, CAS#, WE#): Used for controlling the memory operations.
- Power and Ground Pins (VDD, VSS): Provide power supply and ground connection.
This configuration is suitable for high-performance applications in computers and other electronic devices.
The primary functions of the pins include data input/output, address, command, control signals, and power connections. Key pin functions include:
- Data Pins (DQ0-DQ63): Used for data transfer.
- Address Pins (A0-A12, BA0-BA2): Used for addressing memory locations.
- Control Pins (CK, CK#, CS#, RAS#, CAS#, WE#): Used for controlling the memory operations.
- Power and Ground Pins (VDD, VSS): Provide power supply and ground connection.
This configuration is suitable for high-performance applications in computers and other electronic devices.
Manufacturer
The NT6TL128T64BR-G0 is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and production of dynamic random-access memory (DRAM) and related memory products. Founded in 1995, Nanya is known for its focus on high-performance memory solutions, catering primarily to the computer, consumer electronics, and networking industries. As a leading DRAM manufacturer, the company competes with other major players in the semiconductor industry, providing essential components for a wide range of applications, including PCs, servers, and mobile devices.
Application
The NT6TL128T64BR-G0 is a DDR3 SDRAM memory module commonly used in applications such as high-performance computing, telecommunications, networking devices, and consumer electronics. Its low power consumption and high speed make it suitable for laptops, servers, and embedded systems that require efficient data processing and storage capabilities.
Equivalent
The NT6TL128T64BR-G0 is a DDR2 SDRAM memory chip. Equivalent products include:
1. MT6HT12864HY-667
2. Hynix HYMD516646B6D
3. KVR667D2N5/1G (Kingston)
4. M471B5673FH0-CH9 (Samsung)
Always verify compatibility based on specific requirements like timings, voltage, and density before substitution.
1. MT6HT12864HY-667
2. Hynix HYMD516646B6D
3. KVR667D2N5/1G (Kingston)
4. M471B5673FH0-CH9 (Samsung)
Always verify compatibility based on specific requirements like timings, voltage, and density before substitution.
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