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NT6AN512T32AV-J2
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- 資料表 NT6AN512T32AV-J2 DataSheet
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規格
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | EA |
| Automotive | Unknown |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 0.65(Max) |
| Package Width | 10 |
| Package Length | 15 |
| PCB changed | 200 |
| Standard Package Name | BGA |
| Supplier Package | FBGA |
| Pin Count | 200 |
概述
Description
The NT6AN512T32AV-J2 is a 512 Mb (megabit) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) produced by Nanya Technology. It typically operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (megatransfers per second). This memory chip is designed for high-performance applications, often used in consumer electronics, computing devices, and networking equipment.
Key features include a 32-bit data bus, burst lengths of 8, and multiple bank organization for efficient data access. The NT6AN512T32AV-J2 is suitable for applications requiring fast and reliable memory solutions, such as laptops, desktops, and embedded systems. Its architecture allows for enhanced bandwidth and reduced latency, making it ideal for multitasking and demanding workloads. In summary, this RAM module is a versatile option for modern electronics, balancing capacity, speed, and power efficiency.
Key features include a 32-bit data bus, burst lengths of 8, and multiple bank organization for efficient data access. The NT6AN512T32AV-J2 is suitable for applications requiring fast and reliable memory solutions, such as laptops, desktops, and embedded systems. Its architecture allows for enhanced bandwidth and reduced latency, making it ideal for multitasking and demanding workloads. In summary, this RAM module is a versatile option for modern electronics, balancing capacity, speed, and power efficiency.
Features
The NT6AN512T32AV-J2 is a DDR3 SDRAM memory chip designed for high-performance computing applications. Key features include:
1. Capacity: 512Mb (megabits) per chip, suitable for various memory configurations.
2. Data Rate: Operates at speeds up to 1600 MT/s (million transfers per second), ensuring efficient data processing.
3. Bus Width: 32 bits, allowing for optimized data transfer between the memory and the processor.
4. Package Type: Typically comes in a fine-pitch BGA (Ball Grid Array) package, facilitating compact designs and high-density assembly.
5. Operating Voltage: Low voltage operation at 1.5V, which helps reduce power consumption and heat generation.
6. Burst Length: Supports burst lengths of 4 and 8, enhancing memory access efficiency.
7. Internal Organization: Organized as 64M x 8, making it compatible with a variety of memory architectures.
These features make the NT6AN512T32AV-J2 suitable for applications in laptops, desktops, and servers where high speed and efficiency are paramount.
1. Capacity: 512Mb (megabits) per chip, suitable for various memory configurations.
2. Data Rate: Operates at speeds up to 1600 MT/s (million transfers per second), ensuring efficient data processing.
3. Bus Width: 32 bits, allowing for optimized data transfer between the memory and the processor.
4. Package Type: Typically comes in a fine-pitch BGA (Ball Grid Array) package, facilitating compact designs and high-density assembly.
5. Operating Voltage: Low voltage operation at 1.5V, which helps reduce power consumption and heat generation.
6. Burst Length: Supports burst lengths of 4 and 8, enhancing memory access efficiency.
7. Internal Organization: Organized as 64M x 8, making it compatible with a variety of memory architectures.
These features make the NT6AN512T32AV-J2 suitable for applications in laptops, desktops, and servers where high speed and efficiency are paramount.
Package
The NT6AN512T32AV-J2 is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format, which is designed for high-performance memory applications, providing efficient thermal management and space-saving benefits for compact electronic designs.
Pinout
The NT6AN512T32AV-J2 is a DDR3 SDRAM memory chip. It has a pin count of 78 pins in a TSOP II (Thin Small Outline Package) configuration.
The main function of this chip is to serve as a high-speed memory solution for computer systems, providing data storage and retrieval capabilities. It operates with a 512 Megabit capacity (64 Megabytes) and has a 32-bit data bus width, making it suitable for applications requiring efficient data handling and processing.
The chip supports various features such as burst mode, which allows for faster data access, and operates at a voltage of 1.5V. It is commonly used in consumer electronics, computing devices, and other embedded systems that demand reliable and quick memory performance.
The main function of this chip is to serve as a high-speed memory solution for computer systems, providing data storage and retrieval capabilities. It operates with a 512 Megabit capacity (64 Megabytes) and has a 32-bit data bus width, making it suitable for applications requiring efficient data handling and processing.
The chip supports various features such as burst mode, which allows for faster data access, and operates at a voltage of 1.5V. It is commonly used in consumer electronics, computing devices, and other embedded systems that demand reliable and quick memory performance.
Manufacturer
The NT6AN512T32AV-J2 is manufactured by Nanya Technology Corporation, a Taiwanese company. Nanya specializes in the production of DRAM (Dynamic Random Access Memory) and is one of the major suppliers in the semiconductor industry. The company focuses on developing high-performance memory solutions for various applications, including computers, mobile devices, and embedded systems. Nanya is recognized for its technological advancements and contributions to memory technology, emphasizing quality and innovation in its products.
Application
The NT6AN512T32AV-J2 is a high-speed 512 Mb DDR3 SDRAM memory chip, primarily used in applications such as computers, servers, and high-performance computing devices. Its features make it suitable for mobile devices, networking equipment, and consumer electronics that require efficient data processing and storage capabilities. Additionally, it can be utilized in gaming consoles and embedded systems where high bandwidth and low latency are critical.
Equivalent
The NT6AN512T32AV-J2 chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix HMT351R7BFR8C-PB
2. Micron MT41K512M8DA-125
3. Samsung K4B4G1646D-BCMA
Ensure compatibility with your specific application, as specifications such as speed, latency, and voltage may vary.
1. Hynix HMT351R7BFR8C-PB
2. Micron MT41K512M8DA-125
3. Samsung K4B4G1646D-BCMA
Ensure compatibility with your specific application, as specifications such as speed, latency, and voltage may vary.
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