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NT5CC128M8GN-DI
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- 資料表 NT5CC128M8GN-DI DataSheet
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規格
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.32 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.8(Max) |
| Package Width | 8 |
| Package Length | 10.5 |
| PCB changed | 78 |
| Standard Package Name | BGA |
| Supplier Package | VFBGA |
| Pin Count | 78 |
概述
Description
The NT5CC128M8GN-DI is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip produced by Nanya Technology. It is designed for high-performance applications, offering a density of 1GB (gigabyte) per die, which makes it suitable for a variety of electronic devices, including desktops, laptops, and servers.
Key features include:
- Data Rate: Supports high-speed data transfers, typically up to 1600 MT/s (megatransfers per second).
- Memory Architecture: Organized in a x8 configuration, allowing for efficient data handling.
- Power Efficiency: Operates at a voltage of 1.5V, which is standard for DDR3 memory, providing a balance between performance and power consumption.
- Package Type: Typically available in a small footprint package, suitable for space-constrained applications.
The NT5CC128M8GN-DI is ideal for applications requiring reliable and fast memory solutions, contributing to improved performance in computing tasks.
Key features include:
- Data Rate: Supports high-speed data transfers, typically up to 1600 MT/s (megatransfers per second).
- Memory Architecture: Organized in a x8 configuration, allowing for efficient data handling.
- Power Efficiency: Operates at a voltage of 1.5V, which is standard for DDR3 memory, providing a balance between performance and power consumption.
- Package Type: Typically available in a small footprint package, suitable for space-constrained applications.
The NT5CC128M8GN-DI is ideal for applications requiring reliable and fast memory solutions, contributing to improved performance in computing tasks.
Features
The NT5CC128M8GN-DI is a 1GB DDR3 SDRAM memory chip designed for various applications. Key features include:
1. Capacity: 1 GB density, suitable for use in mobile devices, laptops, and embedded systems.
2. Bus Width: 8 bits, allowing for efficient data transfer.
3. Speed: Operates at standard DDR3 speeds, typically ranging from 800 to 1600 MT/s.
4. Voltage: Operates at 1.5V, which helps in reducing power consumption compared to older DDR generations.
5. Organization: Configured as 128M x 8, which enables high-density memory integration.
6. Package: Available in a small form factor, typically in a FBGA (Fine Ball Grid Array) package, which is suitable for space-constrained applications.
7. Compatibility: Designed to be compatible with various DDR3 controllers and systems.
These features make the NT5CC128M8GN-DI ideal for enhancing performance and efficiency in consumer electronics and computing devices.
1. Capacity: 1 GB density, suitable for use in mobile devices, laptops, and embedded systems.
2. Bus Width: 8 bits, allowing for efficient data transfer.
3. Speed: Operates at standard DDR3 speeds, typically ranging from 800 to 1600 MT/s.
4. Voltage: Operates at 1.5V, which helps in reducing power consumption compared to older DDR generations.
5. Organization: Configured as 128M x 8, which enables high-density memory integration.
6. Package: Available in a small form factor, typically in a FBGA (Fine Ball Grid Array) package, which is suitable for space-constrained applications.
7. Compatibility: Designed to be compatible with various DDR3 controllers and systems.
These features make the NT5CC128M8GN-DI ideal for enhancing performance and efficiency in consumer electronics and computing devices.
Package
The NT5CC128M8GN-DI is packaged in a 78-ball FBGA (Fine Pitch Ball Grid Array) format.
Pinout
The NT5CC128M8GN-DI is a DDR3 SDRAM memory chip that features a pin count of 78. It is organized as 1G x 8 bits and operates with a supply voltage of 1.5V. The key functions of this chip include data storage, fast read/write capabilities, and support for various memory operations such as burst mode. It is commonly used in applications requiring temporary data storage, such as in computers and other electronic devices. The chip is designed for high-speed performance and efficiency in data processing tasks.
Manufacturer
The NT5CC128M8GN-DI is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and manufacture of DRAM (Dynamic Random Access Memory) products. Founded in 1995, Nanya is one of the largest DRAM manufacturers in the world, focusing primarily on memory solutions for consumer electronics, computing, and mobile applications. The company is known for its commitment to innovation in memory technology and production efficiency. Nanya operates fabrication facilities and has a significant presence in the global memory market, providing a range of memory products, including DRAM chips and modules.
Application
The NT5CC128M8GN-DI is a 1GB DDR3 SDRAM memory chip commonly used in various applications, including laptops, desktops, servers, and other computing devices. It is suitable for high-performance tasks such as gaming, graphics processing, and data-intensive applications. Additionally, its energy efficiency makes it ideal for mobile devices and embedded systems requiring compact and low-power memory solutions.
Equivalent
The NT5CC128M8GN-DI chip is a DDR3 SDRAM memory component. Equivalent products typically include similar DDR3 chips with comparable specifications, such as:
1. Micron MT41K128M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646D
4. Nanya NT5CC256M8DN-DI
Ensure to check parameters like speed, voltage, and form factor for compatibility.
1. Micron MT41K128M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646D
4. Nanya NT5CC256M8DN-DI
Ensure to check parameters like speed, voltage, and form factor for compatibility.
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