NT5CB128M16FP-DI

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NT5CB128M16FP-DI

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概述

Description

The NT5CB128M16FP-DI is a DDR3 (Double Data Rate 3) dynamic random-access memory (DRAM) chip from Nanya Technology. It features a capacity of 2 gigabits (256 megabytes) and operates on a 1.5V power supply, which is standard for DDR3 memory. This chip is organized as 128M x 16 and supports a data rate of up to 1600 MT/s (megatransfers per second).
The NT5CB128M16FP-DI is commonly used in various applications, including consumer electronics, computers, and embedded systems, thanks to its balance of performance and power efficiency. It is packaged in a small form factor, making it suitable for space-constrained designs. Additionally, the chip is designed for reliability and longevity, adhering to industry standards for memory components.
Overall, the NT5CB128M16FP-DI is a versatile and efficient memory solution ideal for modern computing needs.

Features

The NT5CB128M16FP-DI is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip manufactured by Nanya Technology. Key features include:
1. Capacity: 1 Gigabit (128MB) per chip.
2. Organization: Configured as 128Mx16, allowing for 16 data bits to be accessed simultaneously.
3. Speed: Supports data rates up to 1600 MT/s (Mega Transfers per second).
4. Voltage: Operates at a low voltage of 1.5V, making it power-efficient.
5. Package Type: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
6. Latency: Offers various CAS latency options, typically CL11 or CL13, enhancing performance for different applications.
7. Compatibility: Designed for use in various applications, including computing and networking devices, supporting DDR3 interface standards.
These features make the NT5CB128M16FP-DI suitable for a wide range of electronic devices that require reliable and efficient memory solutions.

Package

The NT5CB128M16FP-DI is a DDR3 SDRAM memory chip packaged in a 78-ball Fine-Pitch Ball Grid Array (FBGA). This compact package type is designed for efficient space utilization on PCBs, typically used in various electronic devices.

Pinout

The NT5CB128M16FP-DI is a DDR3 SDRAM memory chip with a total of 78 pins. It is designed for use in various applications, including computers and other electronic devices that require volatile memory. The main functions of this memory chip include data storage and retrieval, providing temporary data storage to facilitate quick access by the processor.
Key features include:
- Capacity: 128 Megabits (16 Megabytes)
- Data Width: 16 bits (x16 organization)
- Voltage Supply: Operates typically at 1.5V
- Speed: Supports various data rates, commonly up to 1600 MT/s (megatransfers per second)
The pinout includes power and ground pins, data input/output pins, address pins, control pins (like chip select, write enable, and clock), and additional pins for configuration and functionality. This chip is suitable for applications requiring fast and reliable memory, such as in mobile devices and embedded systems.

Manufacturer

The NT5CB128M16FP-DI is manufactured by Nanya Technology Corporation, a Taiwanese company. Nanya specializes in the production of dynamic random-access memory (DRAM) chips and is one of the leading DRAM manufacturers in the world. The company focuses on memory solutions for various applications, including personal computers, servers, and mobile devices. Nanya Technology is known for its commitment to innovation and high-quality products in the semiconductor industry.

Application

The NT5CB128M16FP-DI is a DDR3 SDRAM memory chip, commonly used in various applications such as computers, laptops, and servers for main memory. It is also suitable for embedded systems, consumer electronics, graphics cards, and networking devices. Its high-speed performance and energy efficiency make it ideal for applications requiring fast data processing and multitasking capabilities.

Equivalent

The NT5CB128M16FP-DI is a 1Gb DDR3 SDRAM chip. Equivalent products include:
1. MT41K256M16HA-125
2. H5TQ2G83CFR
3. IS43TR16128B-125B1
4. K4B4G1646D-DBC
Ensure compatibility with your specific application, as variations may exist in speed, voltage, and packaging.

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