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NT5AD256M16D4-HRI
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- 資料表 NT5AD256M16D4-HRI DataSheet
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規格
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| HTS | 8542.32.00.36 |
| Automotive | Unknown |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 7.5 |
| Package Length | 13 |
| PCB changed | 96 |
| Standard Package Name | BGA |
| Supplier Package | TFBGA |
| Pin Count | 96 |
| Lead Shape | Ball |
概述
Description
The NT5AD256M16D4-HRI is a type of DRAM (Dynamic Random Access Memory) module, specifically a DDR4 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip. It has a capacity of 256 Megabits (32 Megabytes) and operates on a 16-bit data bus. This memory chip is typically used in applications requiring high-performance memory solutions, such as computers, servers, and embedded systems.
Key features include support for higher bandwidth compared to previous generations, improved power efficiency, and enhanced data integrity. The "HRI" designation often indicates specific design specifications or packaging types relevant for particular applications or environments. DDR4 modules such as the NT5AD256M16D4-HRI are designed to meet the demands of modern computing, providing faster data transfer rates and lower voltage operation, thereby contributing to overall system performance and energy efficiency.
Key features include support for higher bandwidth compared to previous generations, improved power efficiency, and enhanced data integrity. The "HRI" designation often indicates specific design specifications or packaging types relevant for particular applications or environments. DDR4 modules such as the NT5AD256M16D4-HRI are designed to meet the demands of modern computing, providing faster data transfer rates and lower voltage operation, thereby contributing to overall system performance and energy efficiency.
Features
The NT5AD256M16D4-HRI is a DDR3 SDRAM memory module produced by Nanya Technology. Here are its key features:
1. Capacity: 2GB (256M x 16 bits).
2. Data Rate: Operates at DDR3-1600 (PC3-12800), providing a maximum bandwidth of 12.8 GB/s.
3. Organization: Composed of 16 bits wide data I/O, with a memory organization of 256M x 16.
4. Voltage: Operates at a low voltage of 1.5V, improving power efficiency.
5. Pin Count: 240-pin DIMM form factor, commonly used in desktops and laptops.
6. Timing: Supports various CAS latencies, enhancing performance in compatible systems.
7. Compatibility: Designed for use in a range of desktop applications and is backward compatible with DDR2 implementations.
This module is suitable for enhancing system performance in both gaming and professional environments.
1. Capacity: 2GB (256M x 16 bits).
2. Data Rate: Operates at DDR3-1600 (PC3-12800), providing a maximum bandwidth of 12.8 GB/s.
3. Organization: Composed of 16 bits wide data I/O, with a memory organization of 256M x 16.
4. Voltage: Operates at a low voltage of 1.5V, improving power efficiency.
5. Pin Count: 240-pin DIMM form factor, commonly used in desktops and laptops.
6. Timing: Supports various CAS latencies, enhancing performance in compatible systems.
7. Compatibility: Designed for use in a range of desktop applications and is backward compatible with DDR2 implementations.
This module is suitable for enhancing system performance in both gaming and professional environments.
Package
The NT5AD256M16D4-HRI is a DDR3 SDRAM memory chip typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This compact package type is designed for efficient space utilization in electronic devices, facilitating high-density memory applications.
Pinout
The NT5AD256M16D4-HRI is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for use in various computing applications, including laptops and desktops. The primary functions of this memory chip include providing high-speed data storage and retrieval for the CPU, enabling multitasking, and facilitating the performance of memory-intensive applications.
The chip features a 256MB capacity organized as 16 bits wide and is optimized for low power consumption, making it suitable for energy-efficient designs. Its operation involves a clock speed of up to 1600 MT/s (million transfers per second) and supports various memory management functions such as burst read/write operations, ensuring improved data throughput and system performance.
The chip features a 256MB capacity organized as 16 bits wide and is optimized for low power consumption, making it suitable for energy-efficient designs. Its operation involves a clock speed of up to 1600 MT/s (million transfers per second) and supports various memory management functions such as burst read/write operations, ensuring improved data throughput and system performance.
Manufacturer
The NT5AD256M16D4-HRI is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the production of dynamic random-access memory (DRAM) products. Founded in 1995, the company focuses on high-performance memory solutions for various applications, including personal computers, servers, and mobile devices. Nanya is known for its commitment to research and development, aiming to innovate and enhance memory technologies. As a key player in the semiconductor industry, Nanya supplies memory products to a global market, contributing significantly to advancements in computing and electronics.
Application
The NT5AD256M16D4-HRI is a DDR3 SDRAM memory chip commonly used in consumer electronics, including laptops, desktops, servers, and embedded systems. It is suitable for applications requiring high-speed data processing, such as gaming, multimedia, and data-intensive computing tasks. Additionally, it may be utilized in networking equipment and industrial automation systems, where reliable memory performance is essential.
Equivalent
The NT5AD256M16D4-HRI chip is a 256Mbit (32MB) DDR3 SDRAM memory module. Equivalent products include:
1. MT41K256M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646F-BCH9
4. Micron MT8JSF25664HZ-1G4D1
Ensure compatibility in terms of speed, voltage, and timing specifications before substitution.
1. MT41K256M16HA-125
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646F-BCH9
4. Micron MT8JSF25664HZ-1G4D1
Ensure compatibility in terms of speed, voltage, and timing specifications before substitution.
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