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NSVBC124EPDXV6T1G

Name: NSVBC124EPDXV6T1G
Rating: 4.7 (12 reviews)

TRANS PREBIAS 1NPN 1PNP SOT-563

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規格

Part Status	Active
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Power - Max	339mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-563
Base Product Number	BC124
Grade	Automotive
Qualification	AEC-Q101

概述

Description

The NSVBC124EPDXV6T1G is a dual N-channel MOSFET designed for high-speed switching applications. It features low on-resistance and fast switching capabilities, making it suitable for power management tasks in various electronic devices, including computers and automotive applications. The device is part of the NSVBC series, which is optimized for efficiency and thermal performance.
Key specifications include a maximum drain-source voltage (Vds) of 30V, a maximum drain current (Id) of 30A, and a low Rds(on) value, which reduces power loss during operation. Its compact package enhances space-saving in circuit designs. The NSVBC124EPDXV6T1G also offers high reliability and is manufactured in compliance with industry standards for RoHS, ensuring it meets environmental regulations.
Engineers typically utilize this MOSFET in applications such as DC-DC converters, motor drivers, and other power management circuits, where efficiency and reliability are critical.

Features

The NSVBC124EPDXV6T1G is a dual N-channel MOSFET designed for low-voltage applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V.
- Current Rating: Supports continuous drain current (ID) of up to 5.5A.
- RDS(on): Offers a low on-resistance (RDS(on)) of approximately 16 mΩ at a gate-source voltage (VGS) of 10V, enhancing efficiency.
- Gate Threshold Voltage (VGS(th)): Typically between 1V and 2.5V, allowing for low-voltage operation.
- Package: Available in a compact SOT-23 package, suitable for space-constrained designs.
- Thermal Resistance: Features good thermal performance with a low thermal resistance junction-to-ambient.
- Applications: Ideal for use in DC-DC converters, load switches, and power management systems.
These features make the NSVBC124EPDXV6T1G suitable for consumer electronics, automotive applications, and other low-voltage power management tasks.

Package

The NSVBC124EPDXV6T1G is packaged in a SC-70-5 (SOT-363) package type. This compact surface-mount package is designed for space-constrained applications and features five pins.

Pinout

The NSVBC124EPDXV6T1G is a dual supply voltage comparator with a total of 8 pins. It is part of the BVC series designed for low-voltage applications. The pin functions are as follows:
1. IN+ (Pin 1): Non-inverting input for comparator.
2. IN- (Pin 2): Inverting input for comparator.
3. VEE (Pin 3): Negative supply voltage.
4. OUT (Pin 4): Output signal.
5. GND (Pin 5): Ground connection.
6. NC (Pin 6): No connect; not used.
7. VCC (Pin 7): Positive supply voltage.
8. NC (Pin 8): No connect; not used.
This comparator operates within a voltage range, typically allowing for quick signal processing and low power consumption, making it suitable for battery-powered applications.

Manufacturer

The NSVBC124EPDXV6T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and mixed-signal devices, as well as sensors and connectivity products. The company serves various industries, including automotive, industrial, consumer electronics, and communication, focusing on energy-efficient solutions to meet the growing demand for sustainable technology.

Application

The NSVBC124EPDXV6T1G is a dual, low-power, general-purpose comparator used in various applications such as battery voltage monitoring, signal conditioning, and level shifting. Its features make it suitable for portable devices, automotive systems, and industrial applications where low power consumption and high-speed operation are essential. It is also utilized in analog-to-digital conversion and pulse-width modulation (PWM) systems.

Equivalent

The NSVBC124EPDXV6T1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Check specifications like V_DS, I_D, and R_DS(on) for compatibility. Always confirm with datasheets for precise comparisons.