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NSB1706DMW5T1G
TRANS 2NPN PREBIAS 0.25W SC70
- 製造商
- 製造商。 部分 #NSB1706DMW5T1G
- 包 5-TSSOP, SC-70-5, SOT-353
- 資料表 NSB1706DMW5T1G DataSheet
- 有現貨的2119
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規格
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | 2 NPN - Pre-Biased (Dual) |
| Current-Collector(Ic)(Max) | 100mA |
| Voltage-CollectorEmitterBreakdown(Max) | 50V |
| Resistor-Base(R1) | 4.7kOhms |
| Resistor-EmitterBase(R2) | 47kOhms |
| DCCurrentGain(hFE)(Min)@IcVce | 80 @ 5mA, 10V |
| VceSaturation(Max)@IbIc | 250mV @ 1mA, 10mA |
| Current-CollectorCutoff(Max) | 500nA |
| Power-Max | 187mW |
| MountingType | Surface Mount |
| Package/Case | 5-TSSOP, SC-70-5, SOT-353 |
概述
Description
The NSB1706DMW5T1G is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (RDS(on)), which enhances efficiency by reducing power loss during operation. The device is typically used in power supplies, motor drivers, and automotive applications, where efficient switching and thermal performance are critical.
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) rating of up to 170A, and a fast switching speed, making it suitable for high-frequency applications. The NSB1706DMW5T1G comes in a compact surface-mount package (DPAK), facilitating easy integration into compact designs.
Overall, this MOSFET is an ideal choice for engineers looking to optimize power efficiency and performance in their electronic circuits.
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) rating of up to 170A, and a fast switching speed, making it suitable for high-frequency applications. The NSB1706DMW5T1G comes in a compact surface-mount package (DPAK), facilitating easy integration into compact designs.
Overall, this MOSFET is an ideal choice for engineers looking to optimize power efficiency and performance in their electronic circuits.
Features
The NSB1706DMW5T1G is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various power supply circuits.
2. Current Rating: The continuous drain current (ID) can reach up to 70A, enabling it to handle substantial loads.
3. On-Resistance: The RDS(on) is typically low at around 0.015 ohms, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (VGS(th)) ranges from 1V to 3V, allowing for easy driving with low-voltage signals.
5. Package Type: It comes in a TO-220 package, providing efficient heat dissipation.
6. Fast Switching Speed: The device supports rapid switching, making it ideal for high-frequency applications.
These features make the NSB1706DMW5T1G suitable for DC-DC converters, motor drives, and other power management solutions.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V, making it suitable for various power supply circuits.
2. Current Rating: The continuous drain current (ID) can reach up to 70A, enabling it to handle substantial loads.
3. On-Resistance: The RDS(on) is typically low at around 0.015 ohms, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The threshold voltage (VGS(th)) ranges from 1V to 3V, allowing for easy driving with low-voltage signals.
5. Package Type: It comes in a TO-220 package, providing efficient heat dissipation.
6. Fast Switching Speed: The device supports rapid switching, making it ideal for high-frequency applications.
These features make the NSB1706DMW5T1G suitable for DC-DC converters, motor drives, and other power management solutions.
Package
The NSB1706DMW5T1G is a MOSFET packaged in a SOT-23 form factor.
Pinout
The NSB1706DMW5T1G is a dual N-channel MOSFET in a surface-mount package. It features a total of 6 pins. The pin configuration typically includes:
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Source 1 (S1): Common source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Source 2 (S2): Common source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
This MOSFET is commonly used in power management applications, providing efficient switching capabilities with low on-resistance and fast switching speeds.
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Source 1 (S1): Common source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Source 2 (S2): Common source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
This MOSFET is commonly used in power management applications, providing efficient switching capabilities with low on-resistance and fast switching speeds.
Manufacturer
The NSB1706DMW5T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, logic, discrete, and sensor solutions, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on providing efficient and innovative technologies to enhance performance and energy efficiency in electronic systems.
Application
The NSB1706DMW5T1G is a dual N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, power supplies, motor control circuits, and load switching in various electronic devices. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching capability.
Equivalent
The NSB1706DMW5T1G is a N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and SI2301. However, ensure to check specific parameters like Vds, Id, Rds(on), and gate threshold voltage for compatibility in your application. Always refer to datasheets for precise specifications.
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