NJD2873T4G

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NJD2873T4G

TRANS NPN 50V 2A DPAK

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規格

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 2 A
Voltage-CollectorEmitterBreakdown(Max) 50 V
VceSaturation(Max)@IbIc 300mV @ 50mA, 1A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 120 @ 500mA, 2V
Power-Max 1.68 W
Frequency-Transition 65MHz
OperatingTemperature -65°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

概述

Description

NJD2873T4G is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It features low on-resistance, high-speed switching capabilities, and is suitable for power management in circuits such as DC-DC converters, motor drivers, and amplifiers.
This MOSFET typically operates at a maximum drain-source voltage (V_DS) of around 30V and has a continuous drain current rating (I_D) that allows it to handle significant power levels while maintaining efficiency. Its compact package size makes it ideal for space-constrained designs.
Key parameters to consider include gate threshold voltage, R_DS(on) (the resistance between drain and source in the on state), and thermal performance. When designing with the NJD2873T4G, proper thermal management and circuit protection are crucial for reliable performance. Its versatility and efficiency make it a popular choice among engineers for modern electronic applications.

Features

The NJD2873T4G is a high-performance integrated circuit designed primarily for voltage regulation and power management applications. Key features include:
1. Output Voltage Regulation: It provides a stable output voltage, making it suitable for various electronic devices.

2. Input Voltage Range: Operates over a wide input voltage range, ensuring compatibility with diverse power sources.
3. High Efficiency: Designed to minimize power loss, enhancing overall system efficiency, which is crucial for battery-powered applications.
4. Thermal Protection: Includes built-in thermal shutdown to prevent damage under over-temperature conditions, ensuring reliability.
5. Compact Package: Available in a space-saving package, ideal for applications with limited board space.
6. Low Quiescent Current: Consumes minimal power in standby mode, extending battery life in portable devices.
7. Fast Transient Response: Offers quick response to load changes, maintaining stability in dynamic operating conditions.
These features make the NJD2873T4G suitable for applications in consumer electronics, automotive systems, and industrial devices.

Package

The NJD2873T4G is packaged in a TO-220 package type. This package is commonly used for power transistors and provides good thermal performance and ease of heat sinking.

Pinout

The NJD2873T4G is a dual N-channel MOSFET in a compact package, typically housed in a SO-8 (Surface Mount) configuration. The device features a total of 8 pins.
Pin Functionality:
1. Gate1 (G1) - Input for the first N-channel MOSFET.
2. Drain1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate2 (G2) - Input for the second N-channel MOSFET.
5. Drain2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Source2 (S2) - Source terminal for the second N-channel MOSFET.
7. Common Source (CS) - Common source connection for both MOSFETs (if applicable).
8. N/C (No Connect) - Not connected or used.
This device is commonly used in power management and switching applications, providing efficient control of high currents.

Manufacturer

The NJD2873T4G is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and producing a wide range of electronic components. ON Semiconductor focuses on the development of energy-efficient solutions, including analog, logic, discrete, and power management devices, catering to various industries such as automotive, industrial, communications, and consumer electronics. The company is known for its commitment to innovation and sustainability, providing products that enhance performance while reducing energy consumption.

Application

The NJD2873T4G is a dual N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor control, switching power supplies, and load switching in various consumer electronics and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for efficient power distribution and energy management systems.

Equivalent

The NJD2873T4G chip is a low dropout (LDO) voltage regulator. Equivalent products include the LM1117 series, MCP1700, and LP2985. Ensure that the specifications, such as output voltage, current rating, and dropout voltage, match your requirements before replacing. Always consult the datasheets for detailed comparisons.

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