NGTB50N65FL2WG

圖片僅供參考

NGTB50N65FL2WG

IGBT TRENCH/FS 650V 100A TO247-3

100%原創; 新

24小時準備發貨

365天保修

RFQ&; 獲得更多折扣

規格

Supplier Rochester Electronics, LLC,onsemi
Package Bulk,Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 100 A
Current-CollectorPulsed(Icm) 200 A
Vce(on)(Max)@VgeIc 2V @ 15V, 50A
Power-Max 417 W
SwitchingEnergy 1.5mJ (on), 460µJ (off)
InputType Standard
GateCharge 220 nC
Td(on/off)@25°C 100ns/237ns
TestCondition 400V, 50A, 10Ohm, 15V
ReverseRecoveryTime(trr) 94 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概述

Description

NGTB50N65FL2WG is a high-voltage, high-current N-channel switching transistor (an N-channel IGBT/NGBT) used in power electronics. Typical ratings are around 650 V blocking with about 50 A continuous current, designed for fast switching in power supplies, motor drives, inverters, solar and UPS circuits. It uses trench-gate technology for lower on-state losses and faster switching, often with an integrated anti-parallel diode.
Key points:
- Applications: motor drives, inverters, switched-mode power supplies, renewable energy systems.
- Drive: gate typically driven at around 12–15 V (not a logic-level 3.3–5 V), with proper gate protection and gate resistors.
- Thermal: requires heat sinking/adequate cooling due to conduction and switching losses.
- Package: 2WG (surface-mount high-current package; check the datasheet for exact footprint and mounting).
For exact electrical characteristics (Vce(sat), switching times, gate threshold, Rds(on) if applicable, safe operating area, and thermal data), refer to the official datasheet from the manufacturer.

Features

NGTB50N65FL2WG is a 650 V N-channel power MOSFET. Key features:
- N-channel enhancement mode
- Vds = 650 V; Id ≈ 50 A (continuous drain current)
- Trench MOSFET technology for improved efficiency
- Low switching losses with reduced gate charge
- Avalanche-rated for protection against inductive loads
- Fast body diode with good reverse-recovery behavior
- Wide operating temperature range (typical for power MOSFETs)
- RoHS compliant, lead-free packaging (FL2WG)
Suitable for high-voltage switching in power supplies, PFC, motor drives, and similar applications.

Package

D2PAK (TO-263) surface-mount package.

Pinout

Pin count: 4 (Gate, Drain, Source pins plus an exposed drain tab). Function: N-channel enhancement‑mode power MOSFET (high-voltage switch, ~650 V, ~50 A); the drain tab is connected to the Drain.

Manufacturer

Manufacturer: Nexperia.
What kind of company: Nexperia is a Dutch multinational semiconductor company specializing in discrete and logic components, including power MOSFETs, diodes, transistors, and related passive components used in power electronics.

Application

Typical applications:
- High-voltage switching in switch‑mode power supplies, PFC stages and DC‑DC converters
- Solar/grid inverters and other PV systems
- Motor drives and variable‑speed drives
- Uninterruptible power supplies (UPS) and power conditioning
- Industrial welding and induction heating equipment

Equivalent

NGTB50N65FL2WG is a 650 V, ~50 A N‑channel MOSFET in a WG (likely D2PAK) package. Exact equivalents depend on Rds(on) and packaging. For precise substitutes, share the datasheet or target Rds(on). Otherwise, search 650 V, ~50 A N‑MOSFETs in D2PAK from major vendors and use distributor cross-reference tools (DigiKey/Mouser) to map part-to-part.

船舶

運輸管道我們

通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。


運費參攷(DHL/FedEx):

動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。

聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。

不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。

三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。

增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。

掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。

支付

Payment Methods

付款條件為100%預付。

現時,我們只接受以下付款方式:

1. 貝寶

2. 信用卡/借記卡

3. 電匯