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NCV5183DR2G
IC GATE DRVR HALF-BRIDGE 8SOIC
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q100 |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 9V ~ 18V |
| LogicVoltage-VILVIH | 1.2V, 2.5V |
| Current-PeakOutput(SourceSink) | 4.3A, 4.3A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 12ns, 12ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Description
The NCV5183DR2G is a gate driver integrated circuit designed by ON Semiconductor. It is primarily used to drive MOSFETs and IGBTs in power supply applications. This device is notable for its high-speed capabilities and is often employed in systems requiring fast switching operations.
Key features of the NCV5183DR2G include its ability to handle high-voltage inputs, typically up to 20 volts, and its capability to provide a strong gate drive current, which enhances the efficiency and performance of power transistors. The IC also includes various protection features such as under-voltage lockout (UVLO) and thermal shutdown, which help prevent damage to the device and the load it drives.
The NCV5183DR2G is used in applications like DC-DC converters, power inverters, and motor control circuits. Its compact design, efficiency, and robustness make it a reliable choice for automotive and industrial power management systems. The device is available in a standard package suitable for surface mount technology, facilitating its integration into complex circuit boards.
Key features of the NCV5183DR2G include its ability to handle high-voltage inputs, typically up to 20 volts, and its capability to provide a strong gate drive current, which enhances the efficiency and performance of power transistors. The IC also includes various protection features such as under-voltage lockout (UVLO) and thermal shutdown, which help prevent damage to the device and the load it drives.
The NCV5183DR2G is used in applications like DC-DC converters, power inverters, and motor control circuits. Its compact design, efficiency, and robustness make it a reliable choice for automotive and industrial power management systems. The device is available in a standard package suitable for surface mount technology, facilitating its integration into complex circuit boards.
Features
The NCV5183DR2G is a high-voltage gate driver IC designed to drive MOSFETs and IGBTs in various applications. Key features include:
1. High Voltage Capability: It supports a wide voltage range up to 100V, making it suitable for high-voltage applications.
2. Output Current: The driver can deliver high peak output currents, enabling fast switching of power transistors.
3. Input Logic Compatibility: It is compatible with standard CMOS or TTL logic levels, facilitating easy interfacing with microcontrollers or logic circuits.
4. Low Propagation Delay: Offers minimal delay times which enhance the efficiency and performance of the power conversion process.
5. Undervoltage Lockout (UVLO): Ensures reliable operation by preventing the driver from operating under insufficient supply voltage conditions.
6. Thermal Shutdown Protection: Protects the device from damage due to overheating.
7. Compact Package: Available in a small, efficient package suitable for space-constrained designs.
These features make it ideal for automotive, industrial, and consumer applications requiring robust and efficient power switching solutions.
1. High Voltage Capability: It supports a wide voltage range up to 100V, making it suitable for high-voltage applications.
2. Output Current: The driver can deliver high peak output currents, enabling fast switching of power transistors.
3. Input Logic Compatibility: It is compatible with standard CMOS or TTL logic levels, facilitating easy interfacing with microcontrollers or logic circuits.
4. Low Propagation Delay: Offers minimal delay times which enhance the efficiency and performance of the power conversion process.
5. Undervoltage Lockout (UVLO): Ensures reliable operation by preventing the driver from operating under insufficient supply voltage conditions.
6. Thermal Shutdown Protection: Protects the device from damage due to overheating.
7. Compact Package: Available in a small, efficient package suitable for space-constrained designs.
These features make it ideal for automotive, industrial, and consumer applications requiring robust and efficient power switching solutions.
Package
The NCV5183DR2G is typically available in a SOIC-8 (Small Outline Integrated Circuit) package type. This package is commonly used for integrated circuits and provides a compact, surface-mount option suitable for automated assembly lines.
Pinout
The NCV5183DR2G is a high-side gate driver IC with an 8-pin configuration. It is designed to drive high-side N-channel MOSFETs, making it useful in switching power applications. The main functions of the NCV5183DR2G include level shifting, gate driving, and providing protection features for the MOSFETs it controls. It operates with a bootstrap capacitor to supply the necessary voltage for driving the gate of high-side transistors.
Here is a brief overview of its pin functions:
1. HB (High-Side Bootstrap Supply Input): Connects to a bootstrap capacitor to supply the high-side driver.
2. HO (High-Side Gate Drive Output): Drives the gate of the high-side MOSFET.
3. HS (High-Side Source Connection): Connects to the source of the high-side MOSFET.
4. HI (High-Side Input): Receives the PWM input signal for the high-side drive.
5. VCC (Supply Voltage): Powers the IC.
6. COM (Common Ground): Reference ground for the IC.
7. LO (Low-Side Gate Drive Output): Provides a low-side drive signal.
8. LI (Low-Side Input): Receives the PWM input signal for the low-side drive.
This configuration allows the NCV5183DR2G to effectively manage high-power applications by controlling MOSFET switching efficiently.
Here is a brief overview of its pin functions:
1. HB (High-Side Bootstrap Supply Input): Connects to a bootstrap capacitor to supply the high-side driver.
2. HO (High-Side Gate Drive Output): Drives the gate of the high-side MOSFET.
3. HS (High-Side Source Connection): Connects to the source of the high-side MOSFET.
4. HI (High-Side Input): Receives the PWM input signal for the high-side drive.
5. VCC (Supply Voltage): Powers the IC.
6. COM (Common Ground): Reference ground for the IC.
7. LO (Low-Side Gate Drive Output): Provides a low-side drive signal.
8. LI (Low-Side Input): Receives the PWM input signal for the low-side drive.
This configuration allows the NCV5183DR2G to effectively manage high-power applications by controlling MOSFET switching efficiently.
Manufacturer
The NCV5183DR2G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that specializes in the design and manufacture of a wide range of semiconductor components, including power management solutions, sensors, and custom devices. The company serves various markets, such as automotive, industrial, communications, computing, and consumer electronics. Onsemi is known for providing energy-efficient innovations and advanced technology solutions to help create a more sustainable and connected world.
Application
The NCV5183DR2G is a high-voltage gate driver IC designed for automotive and industrial applications. It is commonly used in applications such as DC-DC converters, motor drives, and inverters. Its primary function is to drive MOSFETs and IGBTs in high-voltage and high-speed applications, providing efficient power management and control in electric and hybrid vehicles, as well as in various industrial power systems.
Equivalent
The NCV5183DR2G is a gate driver IC primarily used for driving power MOSFETs and IGBTs. Equivalent products may include the IR2110, FAN7392, and UCC27714, depending on the specific requirements of your application, such as voltage, current ratings, and package type. Always check the datasheets to ensure compatibility in terms of specifications and features.
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