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NCE30H10K
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規格
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2(DPAK) |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 100A |
| Pd - Power Dissipation | 110W |
| Drain to Source Voltage | 30V |
| RDS(on) | 5.5mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 70nC |
| Input Capacitance(Ciss@Vds) | 3.4nF@25V |
| Reverse Transfer Capacitance (Crss@Vds) | 308pF |
概述
Description
The NCE30H10K is a high-performance, n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a maximum drain-source voltage (V_DS) of 30 volts and a continuous drain current (I_D) rating of 10 amperes. This device is known for its low on-resistance (R_DS(on)), which minimizes power losses during operation and improves overall efficiency in circuits.
Typically used in switching power supplies, motor drivers, and other electronic applications, the NCE30H10K can operate at high frequencies, making it suitable for modern power electronics. Its thermal characteristics allow it to handle significant power levels without overheating, and it is often packaged in a compact TO-220 or similar housing for easy integration into various designs. The device is ideal for applications requiring both efficiency and reliability in power conversion and management tasks.
Typically used in switching power supplies, motor drivers, and other electronic applications, the NCE30H10K can operate at high frequencies, making it suitable for modern power electronics. Its thermal characteristics allow it to handle significant power levels without overheating, and it is often packaged in a compact TO-220 or similar housing for easy integration into various designs. The device is ideal for applications requiring both efficiency and reliability in power conversion and management tasks.
Features
The NCE30H10K is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 10A, providing robust performance for power switching.
3. Low On-Resistance: It offers a low R_DS(on) value, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, optimizing performance in high-frequency applications.
5. Thermal Performance: Equipped with a sufficient thermal resistance rating, enabling effective heat dissipation during operation.
6. Package Type: Usually available in a TO-220 or similar package, facilitating easy mounting and thermal management.
These features make the NCE30H10K ideal for applications such as DC-DC converters, motor drives, and power management systems.
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 10A, providing robust performance for power switching.
3. Low On-Resistance: It offers a low R_DS(on) value, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, optimizing performance in high-frequency applications.
5. Thermal Performance: Equipped with a sufficient thermal resistance rating, enabling effective heat dissipation during operation.
6. Package Type: Usually available in a TO-220 or similar package, facilitating easy mounting and thermal management.
These features make the NCE30H10K ideal for applications such as DC-DC converters, motor drives, and power management systems.
Package
The NCE30H10K is typically available in a TO-220 package type. This package features a metal tab for heat dissipation, making it suitable for high-power applications.
Pinout
The NCE30H10K is a high-voltage N-channel MOSFET typically used in power applications. It comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - This pin is where the output current flows out. It connects to the load and is the pin through which current enters the MOSFET.
3. Source (S) - This pin is the reference point for gate voltage and is connected to the ground or the negative side of the power supply.
The NCE30H10K is designed for applications like power management, switching, and amplification in various electronic circuits. Its specifications provide high efficiency and thermal performance, making it suitable for demanding environments.
Pin Count and Functions:
1. Gate (G) - This pin controls the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - This pin is where the output current flows out. It connects to the load and is the pin through which current enters the MOSFET.
3. Source (S) - This pin is the reference point for gate voltage and is connected to the ground or the negative side of the power supply.
The NCE30H10K is designed for applications like power management, switching, and amplification in various electronic circuits. Its specifications provide high efficiency and thermal performance, making it suitable for demanding environments.
Manufacturer
The NCE30H10K is manufactured by NCE Power Semiconductor, a company specializing in power semiconductor devices. NCE Power Semiconductor focuses on producing various electronic components, including MOSFETs, IGBTs, and other power management solutions. The company caters primarily to industries such as automotive, consumer electronics, and renewable energy, providing high-performance components for efficient power conversion and management applications.
Application
The NCE30H10K is a high-power N-channel MOSFET primarily used in applications such as power management, motor control, DC-DC converters, and power inverters. It is suitable for use in industrial automation, automotive electronics, and renewable energy systems due to its high efficiency and thermal performance.
Equivalent
The NCE30H10K is a 30A, 1000V N-channel MOSFET. Equivalent products include the STP30NM100, IRF840, and MBR30100CT. Always verify specifications such as voltage, current ratings, and package type before substitution to ensure compatibility for your application.
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