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NCD57001DWR2G
DGTL ISO 5KV 1CH GATE DVR 16SOIC
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規格
| Part Status | Active |
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 5000Vrms |
| Common Mode Transient Immunity (Min) | 100kV/µs |
| Propagation Delay tpLH / tpHL (Max) | 90ns, 90ns |
| Pulse Width Distortion (Max) | 15ns |
| Rise / Fall Time (Typ) | 10ns, 15ns |
| Current - Peak Output | 7.8A, 7.1A |
| Voltage - Output Supply | 0V ~ 24V |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Approval Agency | UL, VDE |
| Base Product Number | NCD57001 |
| Current - DC Forward (If) (Max) | 10 mA |
概述
Description
The NCD57001DWR2G is a high-performance gate driver IC designed for driving both high-side and low-side N-channel MOSFETs and IGBTs. Manufactured by ON Semiconductor, this device is part of the NCD5700x family, which is known for its robust and efficient operation in various power electronics applications.
Key features of the NCD57001DWR2G include its capability to operate at high switching frequencies, support for wide input voltage ranges, and incorporation of various protection mechanisms such as undervoltage lockout (UVLO) and thermal protection. It provides strong gate drive currents which enable rapid switching and enhanced efficiency of the power devices it controls.
The IC is particularly useful in applications like motor drives, power converters, and high-frequency inverters, where precise and reliable gate driving is crucial. The compact package and integrated features minimize the need for additional discrete components, simplifying the design and reducing space requirements on the circuit board.
Overall, the NCD57001DWR2G is valued for its reliability, efficiency, and ease of integration into various power management systems.
Key features of the NCD57001DWR2G include its capability to operate at high switching frequencies, support for wide input voltage ranges, and incorporation of various protection mechanisms such as undervoltage lockout (UVLO) and thermal protection. It provides strong gate drive currents which enable rapid switching and enhanced efficiency of the power devices it controls.
The IC is particularly useful in applications like motor drives, power converters, and high-frequency inverters, where precise and reliable gate driving is crucial. The compact package and integrated features minimize the need for additional discrete components, simplifying the design and reducing space requirements on the circuit board.
Overall, the NCD57001DWR2G is valued for its reliability, efficiency, and ease of integration into various power management systems.
Features
The NCD57001DWR2G is a high-performance isolated gate driver designed for driving power MOSFETs and IGBTs. Key features include:
1. Isolation: Offers galvanic isolation to protect low-voltage side from high-voltage transients.
2. Drive Capability: High peak output current to efficiently drive large gate capacitances.
3. UVLO Protection: Under-Voltage Lockout (UVLO) ensures the driver remains off until adequate supply voltage is achieved.
4. Fast Switching: Short propagation delay and fast rise/fall times for high-frequency applications.
5. Input Compatibility: TTL/CMOS-compatible inputs make it adaptable to various microcontroller and DSP outputs.
6. Safety: Incorporates features to protect against dv/dt-induced false triggering and latch-up.
7. Package: Available in a compact SOIC-8 package suitable for space-constrained designs.
8. Temperature Range: Designed to operate over a wide temperature range for robust industrial applications.
These features make the NCD57001DWR2G suitable for applications requiring reliable and efficient control of power devices, such as motor drives, power inverters, and high-frequency power supplies.
1. Isolation: Offers galvanic isolation to protect low-voltage side from high-voltage transients.
2. Drive Capability: High peak output current to efficiently drive large gate capacitances.
3. UVLO Protection: Under-Voltage Lockout (UVLO) ensures the driver remains off until adequate supply voltage is achieved.
4. Fast Switching: Short propagation delay and fast rise/fall times for high-frequency applications.
5. Input Compatibility: TTL/CMOS-compatible inputs make it adaptable to various microcontroller and DSP outputs.
6. Safety: Incorporates features to protect against dv/dt-induced false triggering and latch-up.
7. Package: Available in a compact SOIC-8 package suitable for space-constrained designs.
8. Temperature Range: Designed to operate over a wide temperature range for robust industrial applications.
These features make the NCD57001DWR2G suitable for applications requiring reliable and efficient control of power devices, such as motor drives, power inverters, and high-frequency power supplies.
Package
The NCD57001DWR2G is a gate driver in an SOIC-8 package. This package type features an 8-lead Small Outline Integrated Circuit (SOIC) design, which is commonly used for surface-mount technology on printed circuit boards.
Pinout
The NCD57001DWR2G is a high-current, single-channel IGBT gate driver IC. It typically comes in an 8-pin SOIC package. The key functions and pins are as follows:
1. VDD: Supply voltage for the IC.
2. IN: Input signal for controlling the gate of the IGBT.
3. GND: Ground reference for the IC.
4. OUT: Output pin connected to the gate of the IGBT.
5. VEE: Negative power supply pin used for providing negative voltage to the gate during turn-off.
6. NC: No connection or used for additional functions depending on specific configurations.
7. FAULT: Indicates fault conditions such as UVLO or overcurrent.
8. EN: Enable pin used to activate or deactivate the driver.
The NCD57001DWR2G is designed to provide fast switching and enhanced protection features for IGBT and MOSFET applications. It is commonly used in industrial and automotive applications where efficient and reliable gate driving is required.
1. VDD: Supply voltage for the IC.
2. IN: Input signal for controlling the gate of the IGBT.
3. GND: Ground reference for the IC.
4. OUT: Output pin connected to the gate of the IGBT.
5. VEE: Negative power supply pin used for providing negative voltage to the gate during turn-off.
6. NC: No connection or used for additional functions depending on specific configurations.
7. FAULT: Indicates fault conditions such as UVLO or overcurrent.
8. EN: Enable pin used to activate or deactivate the driver.
The NCD57001DWR2G is designed to provide fast switching and enhanced protection features for IGBT and MOSFET applications. It is commonly used in industrial and automotive applications where efficient and reliable gate driving is required.
Manufacturer
The NCD57001DWR2G is manufactured by onsemi, also known as ON Semiconductor. Onsemi is a global company that specializes in semiconductor manufacturing. The company provides a wide range of products including power and signal management, logic, discrete, and custom devices for various applications across different industries such as automotive, industrial, cloud, and Internet of Things (IoT). Onsemi's products are integral in energy-efficient electronics, providing solutions that enhance performance while reducing energy consumption.
Application
The NCD57001DWR2G is a high-performance IGBT gate driver IC used primarily in applications such as motor drives, solar inverters, power supplies, and industrial power control systems. It offers reliable and efficient switching control for insulated-gate bipolar transistors (IGBTs), enhancing the performance and efficiency of these systems.
Equivalent
The NCD57001DWR2G is a high-current gate driver from ON Semiconductor, often used for driving MOSFETs or IGBTs. Equivalent products might include the Texas Instruments UCC27511, Infineon's 1EDN8550B, or the Microchip Technology MCP14A0601. These alternatives offer similar functionality and can be used in comparable applications, but always check datasheets for precise specifications and compatibility.
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