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NAND512W3A2CN6F
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規格
| Package / Case | TSOP-48 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Series | NAND512-A |
| Packaging | Reel |
| Brand | STMicroelectronics |
| Product Type | NAND Flash |
| Factory Pack Quantity:Factory Pack Quantity | 1500 |
| Subcategory | Memory & Data Storage |
| Mounting Style | SMD/SMT |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Moisture Sensitive | Yes |
| Supply Voltage - Max | 3.6 V |
| Supply Voltage - Min | 2.7 V |
| Memory Size | 512 Mbit |
| Interface Type | Parallel |
| Organization | 64 M x 8 |
| Active Read Current - Max | 20 mA |
| Supply Current - Max | 20 mA |
| Product | NAND Flash |
| Timing Type | Asynchronous |
| Data Bus Width | 8 bit |
| Architecture | Multiplane |
| Memory Type | NAND |
| Speed | 50 ns |
概述
Description
The NAND512W3A2CN6F is a NAND Flash memory device, commonly used in digital storage applications. Manufactured by STMicroelectronics, this memory chip provides non-volatile storage, which means it retains data even when the power is turned off. It has a capacity of 512 Megabit (Mb), which is equivalent to 64 Megabytes (MB).
The device is organized into blocks and pages, allowing for efficient data management and retrieval. It operates using NAND architecture, which is known for its cost-effectiveness and high-density storage capabilities, making it suitable for use in consumer electronics, industrial applications, and more.
The NAND512W3A2CN6F is compatible with standard NAND Flash interfaces, ensuring easy integration into various systems. It supports features such as wear leveling, bad block management, and error correction to enhance data reliability and longevity. These features are crucial in maintaining performance and data integrity over extensive read/write cycles.
With its compact package and robust performance, the NAND512W3A2CN6F is ideal for use in applications requiring reliable and durable flash memory solutions.
The device is organized into blocks and pages, allowing for efficient data management and retrieval. It operates using NAND architecture, which is known for its cost-effectiveness and high-density storage capabilities, making it suitable for use in consumer electronics, industrial applications, and more.
The NAND512W3A2CN6F is compatible with standard NAND Flash interfaces, ensuring easy integration into various systems. It supports features such as wear leveling, bad block management, and error correction to enhance data reliability and longevity. These features are crucial in maintaining performance and data integrity over extensive read/write cycles.
With its compact package and robust performance, the NAND512W3A2CN6F is ideal for use in applications requiring reliable and durable flash memory solutions.
Features
The NAND512W3A2CN6F is a NAND Flash memory device designed for data storage applications. It features a storage capacity of 512 Mb (megabits). This device is organized in a x8 configuration, which refers to its data bus width, allowing for efficient data transfers.
Key features include:
1. Single-Level Cell (SLC) Technology: Offers enhanced reliability and endurance compared to multi-level cell (MLC) technology.
2. Page Size and Block Structure: Typically supports page sizes of 2048+64 bytes and block sizes of 64 pages (128K+4K bytes).
3. Fast Data Transfer: Capable of high-speed data transfers, suitable for applications requiring quick read/write operations.
4. Endurance and Data Retention: Generally provides high endurance cycles and data retention due to SLC technology.
5. Serial Peripheral Interface (SPI): Supports a serial peripheral interface for communication, facilitating integration with various systems.
6. Low Power Consumption: Designed for energy efficiency, making it suitable for portable and battery-powered devices.
These features make the NAND512W3A2CN6F suitable for a wide range of applications, including embedded systems, consumer electronics, and industrial applications.
Key features include:
1. Single-Level Cell (SLC) Technology: Offers enhanced reliability and endurance compared to multi-level cell (MLC) technology.
2. Page Size and Block Structure: Typically supports page sizes of 2048+64 bytes and block sizes of 64 pages (128K+4K bytes).
3. Fast Data Transfer: Capable of high-speed data transfers, suitable for applications requiring quick read/write operations.
4. Endurance and Data Retention: Generally provides high endurance cycles and data retention due to SLC technology.
5. Serial Peripheral Interface (SPI): Supports a serial peripheral interface for communication, facilitating integration with various systems.
6. Low Power Consumption: Designed for energy efficiency, making it suitable for portable and battery-powered devices.
These features make the NAND512W3A2CN6F suitable for a wide range of applications, including embedded systems, consumer electronics, and industrial applications.
Package
The NAND512W3A2CN6F is a NAND Flash memory chip manufactured by STMicroelectronics. It comes in a TSOP-48 (Thin Small Outline Package) package type, which is a 48-pin surface-mount package designed to minimize the footprint on circuit boards while providing reliable performance for memory applications.
Pinout
The NAND512W3A2CN6F is a NAND Flash memory device manufactured by Micron Technology. It typically comes in a TSOP (Thin Small Outline Package) with 48 pins. This NAND Flash memory is used for storing data in a variety of electronic devices.
The key functions of this memory device include:
1. Data Storage: It is used for storing large amounts of data, generally in consumer electronics, industrial applications, and computing devices.
2. Non-Volatile Memory: It retains stored data even when the power is turned off, making it suitable for applications that require persistent storage.
3. Interface Operations: It supports standard NAND interface operations, including read, program, and erase functions.
4. High Density: This provides a significant amount of storage capacity, allowing it to store substantial amounts of data in a compact form factor.
Please refer to the manufacturer's datasheet for detailed specifications and pin configurations.
The key functions of this memory device include:
1. Data Storage: It is used for storing large amounts of data, generally in consumer electronics, industrial applications, and computing devices.
2. Non-Volatile Memory: It retains stored data even when the power is turned off, making it suitable for applications that require persistent storage.
3. Interface Operations: It supports standard NAND interface operations, including read, program, and erase functions.
4. High Density: This provides a significant amount of storage capacity, allowing it to store substantial amounts of data in a compact form factor.
Please refer to the manufacturer's datasheet for detailed specifications and pin configurations.
Manufacturer
The NAND512W3A2CN6F is a NAND flash memory chip manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor company headquartered in Geneva, Switzerland. It is a leading global developer and supplier of semiconductor solutions across a wide range of microelectronics applications. The company operates in various sectors, including automotive, industrial, personal electronics, communications equipment, and more, focusing on creating innovative technologies and products that address the needs of modern electronics systems.
Application
The NAND512W3A2CN6F is a NAND Flash memory chip commonly used in applications such as smartphones, tablets, digital cameras, and other consumer electronics. It is also utilized in embedded systems, automotive infotainment systems, and industrial devices for data storage due to its high-density and reliable non-volatile storage capabilities.
Equivalent
The NAND512W3A2CN6F is a 512Mb NAND Flash memory chip. Equivalent products typically include other NAND Flash memory chips with similar specifications and capacities from different manufacturers. Examples include:
- Micron MT29F512G08CMC
- Samsung K9F4G08U0D
- Toshiba TC58NVG0S3ETA00
These alternatives should have similar storage capacity and interface options. However, compatibility should be verified based on the specific application requirements.
- Micron MT29F512G08CMC
- Samsung K9F4G08U0D
- Toshiba TC58NVG0S3ETA00
These alternatives should have similar storage capacity and interface options. However, compatibility should be verified based on the specific application requirements.
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