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MURS140T3G
DIODE GEN PURP 400V 1A SMB
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- 製造商。 部分 #MURS140T3G
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 400 V |
| Current-AverageRectified(Io) | 1A |
| Voltage-Forward(Vf)(Max)@If | 1.25 V @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 75 ns |
| Current-ReverseLeakage@Vr | 5 µA @ 400 V |
| MountingType | Surface Mount |
| Package/Case | DO-214AA, SMB |
| SupplierDevicePackage | SMB |
概述
Description
MURS140T3G is a course that typically focuses on the principles and practices of urban and regional studies, with an emphasis on understanding the dynamics of urban environments and the challenges they face. The course may cover topics such as urban planning, social issues, economic development, and environmental sustainability. It aims to equip students with analytical skills to assess urban policies and strategies, fostering critical thinking about how cities evolve and the role of community engagement in urban development. Key learning outcomes often include the ability to analyze urban growth patterns, understand policy implications, and evaluate the impact of urbanization on various demographics. Overall, MURS140T3G serves as a foundational course for those interested in careers related to urban studies, planning, or public policy.
Features
The MURS140T3G is a compact, low-power N-channel MOSFET designed for various applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 40V.
2. Current Rating: It supports continuous drain current (ID) of up to 8A, making it suitable for medium-power applications.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 0.045Ω, which helps improve efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 3V, allowing for easy driving with low-voltage logic levels.
5. Package Type: It is available in a TO-220 package, which aids in heat dissipation and mounting flexibility.
6. Fast Switching: The device is capable of fast switching speeds, making it ideal for applications in power management and switching converters.
These features make the MURS140T3G a versatile choice for electronic designs requiring reliable performance in compact configurations.
1. Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 40V.
2. Current Rating: It supports continuous drain current (ID) of up to 8A, making it suitable for medium-power applications.
3. RDS(on): It has a low on-resistance (RDS(on)), typically around 0.045Ω, which helps improve efficiency by reducing power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 3V, allowing for easy driving with low-voltage logic levels.
5. Package Type: It is available in a TO-220 package, which aids in heat dissipation and mounting flexibility.
6. Fast Switching: The device is capable of fast switching speeds, making it ideal for applications in power management and switching converters.
These features make the MURS140T3G a versatile choice for electronic designs requiring reliable performance in compact configurations.
Package
The MURS140T3G is packaged in a surface-mount type SOD-123. This package type is suitable for space-constrained applications, offering a compact design for easy integration onto printed circuit boards.
Pinout
The MURS140T3G is a Schottky diode manufactured by ON Semiconductor. It features a total of 2 pins. The functions of these pins are as follows:
1. Anode (A): This is the positive terminal where the current enters the diode.
2. Cathode (K): This is the negative terminal where the current exits the diode.
The MURS140T3G is designed for high-speed switching applications, with a maximum reverse voltage of 40V and a forward current rating of 1A. It is commonly used in rectification, freewheeling, and clamping applications due to its low forward voltage drop and fast recovery time. The diode is packaged in a surface-mount SMC package, which facilitates easy integration into various electronic circuits.
1. Anode (A): This is the positive terminal where the current enters the diode.
2. Cathode (K): This is the negative terminal where the current exits the diode.
The MURS140T3G is designed for high-speed switching applications, with a maximum reverse voltage of 40V and a forward current rating of 1A. It is commonly used in rectification, freewheeling, and clamping applications due to its low forward voltage drop and fast recovery time. The diode is packaged in a surface-mount SMC package, which facilitates easy integration into various electronic circuits.
Manufacturer
The MURS140T3G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company focuses on innovative technologies in power management, automotive, industrial, and communication markets, providing essential components for various applications such as consumer electronics, telecommunications, and automotive systems. With a commitment to sustainability and energy efficiency, ON Semiconductor plays a significant role in advancing modern electronics.
Application
The MURS140T3G is a Schottky diode commonly used in applications such as power management, rectification in DC-DC converters, and in high-frequency switching circuits. Its low forward voltage drop and fast switching capabilities make it suitable for use in power supplies, battery charging circuits, and as a clamp diode in various electronic devices. Additionally, it is effective in RF applications and can be utilized in automotive electronics and LED drivers.
Equivalent
The MURS140T3G is a Schottky diode. Equivalent products include the 1N5817, 1N5818, and 1N5820 diodes, which may have similar voltage and current ratings. Ensure compatibility with your specific application requirements, such as forward voltage drop and reverse recovery time, when selecting an equivalent.
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