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MURF860G

Name: MURF860G
Rating: 4.7 (12 reviews)

DIODE GEN PURP 600V 8A TO220FP

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製造商。部分 #MURF860G
包 TO-220-2 Full Pack
資料表 MURF860G DataSheet
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規格

Supplier	Rochester Electronics, LLC,onsemi
Package	Bulk,Tube
Series	SWITCHMODE™
ProductStatus	Active
DiodeType	Standard
Voltage-DCReverse(Vr)(Max)	600 V
Current-AverageRectified(Io)	8A
Voltage-Forward(Vf)(Max)@If	1.5 V @ 8 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr)	60 ns
Current-ReverseLeakage@Vr	10 µA @ 600 V
MountingType	Through Hole
Package/Case	TO-220-2 Full Pack
SupplierDevicePackage	TO-220FP

概述

Description

MURF860G is a high-performance, low-power operational amplifier designed for various applications, including signal processing, audio, and sensor interfacing. It features a wide supply voltage range, typically from ±2.5V to ±15V, making it versatile for different circuit designs. The amplifier boasts a low input offset voltage and high common-mode rejection ratio, ensuring accurate signal amplification with minimal noise interference.
Its high gain-bandwidth product allows for effective operation in high-frequency applications, while its low total harmonic distortion (THD) ensures high fidelity in audio applications. The device is often housed in compact packages, facilitating integration into space-constrained designs. Additionally, it incorporates features such as improved thermal performance and stability over temperature variations.
Overall, the MURF860G is suitable for a range of electronic applications, offering reliability and precision in signal amplification tasks.

Features

The MURF860G is a high-performance, ultra-fast recovery diode designed for various applications in power electronics. Key features include:
1. Voltage Rating: Typically supports reverse voltage ratings up to 600V.
2. Current Rating: Capable of handling forward currents up to 8A, making it suitable for high-current applications.
3. Reverse Recovery Time: Fast recovery time (often in the range of 30-50ns), which minimizes switching losses and enhances efficiency in high-frequency circuits.
4. Low Forward Voltage Drop: Ensures minimal power loss during conduction, improving overall system performance.
5. Robust Packaging: Available in various package types, such as DO-214AA (SMB), which enhances thermal performance and reliability.
6. Temperature Range: Operates effectively over a wide temperature range, ensuring reliability in diverse environments.
These features make the MURF860G ideal for use in power supplies, converters, and inverters.

Package

The MURF860G is packaged in a TO-220 type package. This configuration provides effective heat dissipation and is commonly used for high-power applications in electronics.

Pinout

The MURF860G is a high-speed, low-power, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in various power management applications. It features a pin count of 8.
Pin Configuration and Functions:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load and carries the output current.
3. Source (S) - Connects to ground or power supply, completing the circuit.
4. Body Diode (internal) - Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The MURF860G is designed for efficiency, making it suitable for applications like power supplies, motor drivers, and DC-DC converters. Its specifications typically include low on-resistance and fast switching times, which enhances overall circuit performance.

Manufacturer

The MURF860G is manufactured by Microchip Technology Inc., a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions. Founded in 1989, Microchip is known for its commitment to embedded control and offers a broad range of products that support various applications in automotive, industrial, consumer, and telecommunications markets. The company is recognized for its innovation in microcontroller technology, providing comprehensive development tools, and fostering a robust ecosystem for developers. With a global presence, Microchip serves diverse industries, emphasizing quality and reliability in its semiconductor products.

Application

MURF860G is a Schottky diode primarily used in applications like power supply rectification, reverse battery protection, and voltage clamping. Its low forward voltage drop and fast switching capabilities make it suitable for high-efficiency circuits, including DC-DC converters, solar inverters, and RF applications. Additionally, it is ideal for use in automotive electronics and consumer devices where space and thermal management are crucial.

Equivalent

The MURF860G is typically equivalent to the MURF860 and other similar diodes designed for high-speed switching and rectification. Check specific parameters such as voltage and current ratings when looking for equivalents. Additional alternatives could include components from brands like Vishay, STMicroelectronics, or ON Semiconductor, depending on the application requirements. Always consult datasheets for precise specifications.