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MURB1620CTRT4G
DIODE ARRAY GP 200V 8A D2PAK
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- 製造商。 部分 #MURB1620CTRT4G
- 包 D2PAK-3 , TO-263-2
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規格
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | SWITCHMODE™ |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Anode |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 200 V |
| Current-AverageRectified(Io)(perDiode) | 8A |
| Voltage-Forward(Vf)(Max)@If | 1.2 V @ 8 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 85 ns |
| Current-ReverseLeakage@Vr | 5 µA @ 200 V |
| OperatingTemperature-Junction | -65°C ~ 175°C |
| MountingType | Surface Mount |
| Package/Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
概述
Description
MURB1620CTRT4G is a component that typically refers to a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in electronic circuits for switching and amplification applications. It features a low on-resistance, which makes it suitable for power management and efficiency in various devices, including power supplies and motor control systems.
Key specifications often include maximum drain-source voltage, continuous drain current, and threshold voltage. It is usually packaged in a TO-220 or similar format for effective heat dissipation.
Such components are essential in modern electronics, enabling the design of more compact, energy-efficient devices. When integrating the MURB1620CTRT4G into a circuit, careful attention to datasheet specifications is crucial to ensure optimal performance and reliability.
Key specifications often include maximum drain-source voltage, continuous drain current, and threshold voltage. It is usually packaged in a TO-220 or similar format for effective heat dissipation.
Such components are essential in modern electronics, enabling the design of more compact, energy-efficient devices. When integrating the MURB1620CTRT4G into a circuit, careful attention to datasheet specifications is crucial to ensure optimal performance and reliability.
Features
The MURB1620CTRT4G is a high-efficiency Schottky barrier rectifier featuring a maximum repetitive reverse voltage of 20V and a forward current rating of 16A. It boasts low forward voltage drop and fast switching capabilities, making it suitable for various applications, including power supplies, DC-DC converters, and battery chargers. The device is encapsulated in a compact TO-220 package, allowing for easy heat dissipation and improved thermal management. It is designed for improved reliability and performance in demanding environments, with robust construction to handle high surge currents. Its features also include a low reverse recovery time, enhancing efficiency in high-frequency applications. Overall, the MURB1620CTRT4G is an ideal choice for engineers seeking a reliable and efficient solution in power electronics.
Package
The MURB1620CTRT4G is packaged in a TO-220 package type. This package provides efficient heat dissipation and is commonly used for power semiconductor devices.
Pinout
The MURB1620CTRT4G is a dual-channel, bidirectional thyristor, also known as a silicon-controlled rectifier (SCR). It is typically packaged in a TO-220 form factor. This device is often used for controlling power in various applications, including motor drives and lighting controls.
Pin Count and Functions:
- Pins: The MURB1620CTRT4G has 3 pins.
- Pin Functions:
1. Anode 1 (A1): The positive terminal for the first thyristor.
2. Anode 2 (A2): The positive terminal for the second thyristor.
3. Gate (G): The control terminal that triggers the thyristor to conduct.
This device is designed for high-voltage applications, with a maximum repetitive peak reverse voltage (V_RRM) of 1600V and a maximum continuous current (I_T) rating of 20A.
Pin Count and Functions:
- Pins: The MURB1620CTRT4G has 3 pins.
- Pin Functions:
1. Anode 1 (A1): The positive terminal for the first thyristor.
2. Anode 2 (A2): The positive terminal for the second thyristor.
3. Gate (G): The control terminal that triggers the thyristor to conduct.
This device is designed for high-voltage applications, with a maximum repetitive peak reverse voltage (V_RRM) of 1600V and a maximum continuous current (I_T) rating of 20A.
Manufacturer
The MURB1620CTRT4G is manufactured by ON Semiconductor, a prominent company in the semiconductor industry. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including integrated circuits, sensors, and discrete devices. The company serves various sectors such as automotive, industrial, and consumer electronics, providing solutions that enhance energy efficiency and performance.
Application
MURB1620CTRT4G is a Schottky barrier rectifier commonly used in power supply circuits, DC-DC converters, and solar inverters. Its low forward voltage drop and fast switching capabilities make it suitable for high-efficiency applications, including electric vehicles, industrial power supplies, and consumer electronics. It also finds use in battery management systems and as a flyback diode in switching power supplies.
Equivalent
The MURB1620CTRT4G is a Schottky barrier rectifier. Equivalent products include the MURS160, MURS220, and MURS240 series from various manufacturers. It's advisable to check the specifications for voltage, current ratings, and thermal characteristics to ensure compatibility. Always refer to the manufacturer's datasheets for precise equivalents.
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