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MURA105T3G
DIODE STANDARD 50V 2A SMA
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規格
| Part Status | Active |
| Base Product Number | MURA105 |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 50 V |
| Mounting Type | Surface Mount |
| Package | DO-214AC, SMA |
| Supplier Device Package | SMA |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
| Technology | Standard |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
概述
Description
MURA105T3G is a course designed to introduce students to foundational concepts in a specific field of study, likely related to healthcare, technology, or a similar discipline, given the context of the course code. The curriculum typically covers essential theories, practical applications, and critical thinking skills necessary for understanding the subject matter. Students can expect to engage in lectures, discussions, and hands-on activities that foster a comprehensive understanding of the core topics. This course may also emphasize interdisciplinary approaches, preparing students for advanced studies or careers in related areas. By the end of the course, participants should be equipped with the knowledge and skills to further explore specialized topics within the field.
Features
The MURA105T3G is a Schottky barrier rectifier designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum reverse voltage of 100V, making it suitable for various power supply applications.
2. Current Rating: The device can handle a forward current of up to 1A, ensuring reliable performance in moderate power applications.
3. Low Forward Voltage Drop: It exhibits a low forward voltage drop (typically around 0.45V), which enhances efficiency by reducing power loss during operation.
4. Fast Switching Speed: Its Schottky construction allows for rapid switching, making it ideal for high-frequency applications.
5. Low Reverse Leakage Current: The device features minimal reverse leakage, improving performance in power management circuits.
6. Package Type: It is available in the TO-220 package, providing effective thermal management and ease of integration into existing designs.
These features make the MURA105T3G suitable for use in power supplies, DC-DC converters, and various electronic circuits where efficiency and reliability are critical.
1. Voltage Rating: It has a maximum reverse voltage of 100V, making it suitable for various power supply applications.
2. Current Rating: The device can handle a forward current of up to 1A, ensuring reliable performance in moderate power applications.
3. Low Forward Voltage Drop: It exhibits a low forward voltage drop (typically around 0.45V), which enhances efficiency by reducing power loss during operation.
4. Fast Switching Speed: Its Schottky construction allows for rapid switching, making it ideal for high-frequency applications.
5. Low Reverse Leakage Current: The device features minimal reverse leakage, improving performance in power management circuits.
6. Package Type: It is available in the TO-220 package, providing effective thermal management and ease of integration into existing designs.
These features make the MURA105T3G suitable for use in power supplies, DC-DC converters, and various electronic circuits where efficiency and reliability are critical.
Package
The MURA105T3G is packaged as a DO-214AC (SMA) surface-mount diode. This package type is commonly used for its compact size and efficient thermal performance in electronic applications.
Pinout
The MURA105T3G is a fast-recovery rectifier diode packaged in a DO-214AC (SMB) format. It features a pin count of two. The primary function of this diode is to convert alternating current (AC) to direct current (DC) in various electronic applications, including power supplies and voltage regulation circuits. It is designed to handle a maximum repetitive reverse voltage of 100V and a forward current rating of 1A, making it suitable for low to moderate power applications. Its fast recovery time is beneficial for switching applications, reducing losses during operation.
Manufacturer
The MURA105T3G is manufactured by ON Semiconductor, a prominent semiconductor company. ON Semiconductor specializes in designing and producing a wide range of electronic components, including power management, analog, and logic devices, as well as sensors and discrete components. Founded through the merger of multiple companies, ON Semiconductor has established itself as a key player in the global semiconductor market, serving various industries such as automotive, industrial, consumer electronics, and telecommunications. The MURA105T3G itself is a silicon rectifier diode, widely used for applications requiring efficient rectification and reliability.
Application
MURA105T3G is a silicon rectifier diode used primarily in power management applications. Its key application areas include power supplies, rectification in AC to DC converters, voltage regulation circuits, and battery charging systems. It is also suitable for general-purpose switching and signal processing in electronic circuits.
Equivalent
The MURA105T3G is a Schottky barrier rectifier diode. Equivalent products include the 1N5817, 1N5818, and 1N5819 diodes, which are also Schottky diodes but may have different voltage and current ratings. Always check the specific electrical characteristics to ensure compatibility with your application.
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