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MUN5314DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88
- 製造商
- 製造商。 部分 #MUN5314DW1T1G
- 包 6-TSSOP, SC-88, SOT-363
- 資料表 MUN5314DW1T1G DataSheet
- 有現貨的3641
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規格
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current-Collector(Ic)(Max) | 100mA |
| Voltage-CollectorEmitterBreakdown(Max) | 50V |
| Resistor-Base(R1) | 10kOhms |
| Resistor-EmitterBase(R2) | 47kOhms |
| DCCurrentGain(hFE)(Min)@IcVce | 80 @ 5mA, 10V |
| VceSaturation(Max)@IbIc | 250mV @ 300µA, 10mA |
| Current-CollectorCutoff(Max) | 500nA |
| Power-Max | 250mW |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
概述
Description
MUN5314DW1T1G is likely a course code for a specific academic program, possibly related to Model United Nations (MUN) or a similar field. Courses with such codes typically focus on diplomacy, international relations, and negotiation skills. They may cover topics like global governance, conflict resolution, and the workings of international organizations.
Students enrolled in MUN5314DW1T1G would engage in simulations, role-playing diplomatic scenarios, and analyzing contemporary global issues. The course aims to develop critical thinking, public speaking, and teamwork skills, preparing students for careers in international relations, law, or policy-making.
For precise details about the course structure, objectives, and requirements, refer to the official syllabus or the educational institution offering it.
Students enrolled in MUN5314DW1T1G would engage in simulations, role-playing diplomatic scenarios, and analyzing contemporary global issues. The course aims to develop critical thinking, public speaking, and teamwork skills, preparing students for careers in international relations, law, or policy-making.
For precise details about the course structure, objectives, and requirements, refer to the official syllabus or the educational institution offering it.
Features
The MUN5314DW1T1G is a dual N-channel MOSFET designed for efficient power switching applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 62A, making it suitable for high-power applications.
3. Low On-Resistance: Features a low R_DS(on), around 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for high-speed switching, enabling faster operation in power management circuits.
5. Thermal Performance: Enhanced thermal characteristics due to its TO-220 package, facilitating efficient heat dissipation.
6. Gate Threshold Voltage: Typically has a low gate threshold voltage (V_GS(th)), allowing it to be driven by lower voltage levels.
7. Applications: Commonly used in power supplies, motor control, and DC-DC converters.
Overall, the MUN5314DW1T1G is ideal for applications requiring high efficiency and reliability in switching power devices.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 62A, making it suitable for high-power applications.
3. Low On-Resistance: Features a low R_DS(on), around 10 mΩ, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Designed for high-speed switching, enabling faster operation in power management circuits.
5. Thermal Performance: Enhanced thermal characteristics due to its TO-220 package, facilitating efficient heat dissipation.
6. Gate Threshold Voltage: Typically has a low gate threshold voltage (V_GS(th)), allowing it to be driven by lower voltage levels.
7. Applications: Commonly used in power supplies, motor control, and DC-DC converters.
Overall, the MUN5314DW1T1G is ideal for applications requiring high efficiency and reliability in switching power devices.
Package
The MUN5314DW1T1G is a surface mount package type, specifically in the SOT-23 package configuration.
Pinout
The MUN5314DW1T1G is a dual N-channel MOSFET transistor in a surface-mount SO-8 package. It features 8 pins. The primary function of the MUN5314 is to serve as a switch for low voltage and low current applications in various electronic circuits. Each MOSFET can be used independently, allowing for versatile configurations in applications such as power management, signal switching, and load driving.
The pin configuration is as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Source1 (S1) - Source terminal of the first MOSFET.
3. Drain1 (D1) - Drain terminal of the first MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Source2 (S2) - Source terminal of the second MOSFET.
6. Drain2 (D2) - Drain terminal of the second MOSFET.
7. Drain1 (D1) - Common to the source of both MOSFETs.
8. Source2 (S2) - Common source terminal.
This device is commonly used in various applications due to its efficient switching capabilities.
The pin configuration is as follows:
1. Gate1 (G1) - Controls the first N-channel MOSFET.
2. Source1 (S1) - Source terminal of the first MOSFET.
3. Drain1 (D1) - Drain terminal of the first MOSFET.
4. Gate2 (G2) - Controls the second N-channel MOSFET.
5. Source2 (S2) - Source terminal of the second MOSFET.
6. Drain2 (D2) - Drain terminal of the second MOSFET.
7. Drain1 (D1) - Common to the source of both MOSFETs.
8. Source2 (S2) - Common source terminal.
This device is commonly used in various applications due to its efficient switching capabilities.
Manufacturer
The manufacturer of the MUN5314DW1T1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of electronic components, including power management, analog, and mixed-signal devices, as well as discrete semiconductors. The company serves various industries, such as automotive, communications, computing, consumer electronics, and industrial applications. Established through a series of mergers and acquisitions, ON Semiconductor is noted for its commitment to sustainability and innovation in the semiconductor sector.
Application
The MUN5314DW1T1G is a dual N-channel MOSFET used in various applications such as power management, motor control, and switching applications in consumer electronics. It is suitable for low-voltage operations and can be utilized in power supplies, DC-DC converters, and load switching circuits. Its efficiency and fast switching capabilities make it ideal for compact and high-performance designs.
Equivalent
The MUN5314DW1T1G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000, among others. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility for your specific application.
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