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MT62F4G32D8DV-023 WT:C
DRAM LPDDR5 128Gbit 32 315/315 LFBGA 8 WT
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| Packaging | Tray |
| Standard Pack Qty | 1050 |
概述
Description
The MT62F4G32D8DV-023 WT:C is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a density of 4Gb (gigabits), organized as 512Mb x 8 bits, making it suitable for various applications, including smartphones, tablets, and other mobile devices. The "WT" designation indicates that it is part of Micron's wide temperature range offerings, ensuring stable performance across diverse environmental conditions.
This chip operates at a voltage of 1.5V and supports data rates up to 1600 MT/s (megatransfers per second), ensuring efficient data processing and reduced power consumption. The "C" at the end signifies the commercial grade, suitable for consumer electronics.
Integration of this memory chip can enhance the performance of devices by providing faster data access and improved multitasking capabilities. It is crucial for designers to consider the specific electrical and thermal requirements, as well as the intended application, to fully leverage its capabilities. Overall, the MT62F4G32D8DV-023 WT:C is a versatile and reliable choice for modern electronic applications.
This chip operates at a voltage of 1.5V and supports data rates up to 1600 MT/s (megatransfers per second), ensuring efficient data processing and reduced power consumption. The "C" at the end signifies the commercial grade, suitable for consumer electronics.
Integration of this memory chip can enhance the performance of devices by providing faster data access and improved multitasking capabilities. It is crucial for designers to consider the specific electrical and thermal requirements, as well as the intended application, to fully leverage its capabilities. Overall, the MT62F4G32D8DV-023 WT:C is a versatile and reliable choice for modern electronic applications.
Features
The MT62F4G32D8DV-023 WT:C is a DDR3 SDRAM memory chip produced by Micron Technology. Here are its key features:
1. Density: 4 Gigabits (512 Megabytes x 8 bits).
2. Organization: 512M x 8 configuration, suitable for various applications requiring high-speed data processing.
3. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Voltage: Low voltage operation at 1.5V, with options for 1.35V (DDR3L) for energy efficiency.
5. Package: Typically in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating compact design in electronic devices.
6. Features: Supports burst lengths of 4 and 8, with various modes for enhanced performance and efficiency.
7. Applications: Commonly used in consumer electronics, networking equipment, and computing devices.
This chip is optimized for high-performance tasks, balancing speed and energy efficiency.
1. Density: 4 Gigabits (512 Megabytes x 8 bits).
2. Organization: 512M x 8 configuration, suitable for various applications requiring high-speed data processing.
3. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Voltage: Low voltage operation at 1.5V, with options for 1.35V (DDR3L) for energy efficiency.
5. Package: Typically in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating compact design in electronic devices.
6. Features: Supports burst lengths of 4 and 8, with various modes for enhanced performance and efficiency.
7. Applications: Commonly used in consumer electronics, networking equipment, and computing devices.
This chip is optimized for high-performance tasks, balancing speed and energy efficiency.
Package
The MT62F4G32D8DV-023 WT:C is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This type of package is designed for high-density applications, providing efficient thermal and electrical performance for memory devices.
Pinout
The MT62F4G32D8DV-023 WT:C is a 4 Gb DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip produced by Micron. It features a pin count of 78.
The primary functions of this memory device include serving as a volatile storage option for data in computing devices, facilitating high-speed data transfer with a bandwidth of up to 1600 MT/s (megatransfers per second) per pin. It operates on a 1.5V power supply and offers a variety of features such as burst read and write capabilities, which enhance performance in applications like smartphones, tablets, and other embedded systems.
The specific pin configuration includes functions for data input/output (DQ), address lines (A), bank select (BA), clock inputs (CLK, CK, CK#), and control signals (CS, RAS, CAS, WE), among others, which are integral to its operation in a memory subsystem.
The primary functions of this memory device include serving as a volatile storage option for data in computing devices, facilitating high-speed data transfer with a bandwidth of up to 1600 MT/s (megatransfers per second) per pin. It operates on a 1.5V power supply and offers a variety of features such as burst read and write capabilities, which enhance performance in applications like smartphones, tablets, and other embedded systems.
The specific pin configuration includes functions for data input/output (DQ), address lines (A), bank select (BA), clock inputs (CLK, CK, CK#), and control signals (CS, RAS, CAS, WE), among others, which are integral to its operation in a memory subsystem.
Manufacturer
The MT62F4G32D8DV-023 WT:C is manufactured by Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovation in memory technology and plays a significant role in the semiconductor industry, focusing on high-performance and reliable memory products. Micron is publicly traded on the NASDAQ under the ticker symbol MU.
Application
The MT62F4G32D8DV-023 WT:C is a DRAM memory chip, primarily used in applications such as mobile devices, tablets, and portable electronics, where high-density memory is required. It supports high-speed data processing for multimedia applications, gaming, and multitasking environments, making it suitable for smartphones and embedded systems.
Equivalent
The MT62F4G32D8DV-023 WT:C chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Samsung K4B4G1646E-BCK0
2. Hynix H5TQ4G63AFR-PBA
3. Micron MT41K256M16HA-125
Always verify compatibility with specific applications and systems before substitution.
1. Samsung K4B4G1646E-BCK0
2. Hynix H5TQ4G63AFR-PBA
3. Micron MT41K256M16HA-125
Always verify compatibility with specific applications and systems before substitution.
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