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MT61K512M32KPA-16:E
IC DRAM 16GBIT POD 180FBGA
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規格
| Part Status | Active |
| Base Product Number | MT61K512 |
| Memory Format | DRAM |
| Technology | SGRAM - GDDR6 |
| Memory Size | 16Gbit |
| Memory Organization | 512M x 32 |
| Memory Interface | POD_135 |
| Packaging | Tray |
概述
Description
MT61K512M32KPA-16:E is a Micron memory device (MT61K family). It is a 512-megabit density memory chip intended for embedded/mobile applications, offered with an extended-temperature grade denoted by “-E.” It is a synchronous DRAM-like device that requires a memory controller to issue proper commands and manage refresh cycles.
Key points:
- Density: about 512 Mbits (exact organization and width vary by variant)
- Interface: wide/i/o DRAM-style interface; timing and protocol defined in the Micron datasheet
- Temperature: -E indicates extended operating temperature
- Usage: external memory in embedded systems; requires controller, timing parameters, and refresh logic
For precise details—organization (bits per word, page size), voltage, timing parameters, package options, and recommended operating conditions—consult the official Micron MT61K512M32KPA-16:E datasheet and product selector. If you can share your target application and controller, I can help map the specs to your design.
Key points:
- Density: about 512 Mbits (exact organization and width vary by variant)
- Interface: wide/i/o DRAM-style interface; timing and protocol defined in the Micron datasheet
- Temperature: -E indicates extended operating temperature
- Usage: external memory in embedded systems; requires controller, timing parameters, and refresh logic
For precise details—organization (bits per word, page size), voltage, timing parameters, package options, and recommended operating conditions—consult the official Micron MT61K512M32KPA-16:E datasheet and product selector. If you can share your target application and controller, I can help map the specs to your design.
Pinout
Pin count: 48 pins.
Function: MT61K512M32KPA-16:E is a NAND flash memory device (non-volatile storage). It uses an 8‑bit data I/O (DQ0–DQ7) with command/address control via CLE/ALE, and data read/write via WE#/RE#. It includes chip enable (CE#) and write-protect (WP#) signals and other standard NAND control signals for storage operations.
Function: MT61K512M32KPA-16:E is a NAND flash memory device (non-volatile storage). It uses an 8‑bit data I/O (DQ0–DQ7) with command/address control via CLE/ALE, and data read/write via WE#/RE#. It includes chip enable (CE#) and write-protect (WP#) signals and other standard NAND control signals for storage operations.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage solutions (DRAM, NAND/NOR flash) for computing, data centers, mobile, and embedded markets.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage solutions (DRAM, NAND/NOR flash) for computing, data centers, mobile, and embedded markets.
Application
MT61K512M32KPA-16:E is a DRAM used as system main memory. Typical applications include:
- Embedded systems and consumer electronics
- Networking and communications equipment
- Automotive infotainment and dashboards
- Industrial control and automation
- Gaming consoles/handheld devices
- Printers and other office equipment memory buffers
- Embedded systems and consumer electronics
- Networking and communications equipment
- Automotive infotainment and dashboards
- Industrial control and automation
- Gaming consoles/handheld devices
- Printers and other office equipment memory buffers
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