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MT53E512M32D2NP-046
IC DRAM 16GBIT 2.133GHZ 200WFBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT53E512 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 512M x 32 |
| Clock Frequency | 2.133 GHz |
| Voltage - Supply | 1.1V |
| Operating Temperature | 0°C ~ 95°C |
| Mounting Type | Surface Mount |
| Package | 200-WFBGA |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Packaging | Box |
概述
Description
The MT53E512M32D2NP-046 is a type of DRAM (Dynamic Random Access Memory) memory chip manufactured by Micron Technology. It belongs to the DDR4 (Double Data Rate 4) family and is designed for high-performance computing applications. This specific model features a 512 Megabit x 32 configuration, which means it has a total capacity of 2 GB (gigabytes). The "046" in the part number typically indicates the manufacturing process or revision.
This memory chip operates at a voltage of 1.2V, providing improved energy efficiency compared to earlier DDR3 memory. It supports data rates of up to 2400 MT/s (mega-transfers per second), ensuring fast data access and transfer speeds, which are crucial for modern applications such as servers, workstations, and high-performance computing systems.
Overall, the MT53E512M32D2NP-046 is designed to balance efficiency, speed, and density, making it suitable for a range of applications in the computing industry.
This memory chip operates at a voltage of 1.2V, providing improved energy efficiency compared to earlier DDR3 memory. It supports data rates of up to 2400 MT/s (mega-transfers per second), ensuring fast data access and transfer speeds, which are crucial for modern applications such as servers, workstations, and high-performance computing systems.
Overall, the MT53E512M32D2NP-046 is designed to balance efficiency, speed, and density, making it suitable for a range of applications in the computing industry.
Features
The MT53E512M32D2NP-046 is a DRAM memory component from Micron Technology. Here are its key features:
1. Type: LPDDR4 SDRAM (Low Power Double Data Rate 4 Synchronous Dynamic Random Access Memory).
2. Capacity: 512 Megabits (64 Megabytes) per chip.
3. Organization: 32 bits wide, making it suitable for high-bandwidth applications.
4. Speed: Operates at a data rate of 4.6 Gbps per pin, with a typical clock frequency, enhancing overall performance.
5. Power Efficiency: Designed for low power consumption, ideal for mobile devices and applications where battery life is critical.
6. Thermal Characteristics: Features optimized thermal performance, ensuring reliability in compact designs.
7. Interface: Utilizes a mobile memory interface, allowing for integration in smartphones, tablets, and other portable electronics.
8. Package Type: Offered in a compact form factor, facilitating space-saving designs.
This combination of features makes the MT53E512M32D2NP-046 suitable for a variety of applications, particularly in mobile and embedded systems.
1. Type: LPDDR4 SDRAM (Low Power Double Data Rate 4 Synchronous Dynamic Random Access Memory).
2. Capacity: 512 Megabits (64 Megabytes) per chip.
3. Organization: 32 bits wide, making it suitable for high-bandwidth applications.
4. Speed: Operates at a data rate of 4.6 Gbps per pin, with a typical clock frequency, enhancing overall performance.
5. Power Efficiency: Designed for low power consumption, ideal for mobile devices and applications where battery life is critical.
6. Thermal Characteristics: Features optimized thermal performance, ensuring reliability in compact designs.
7. Interface: Utilizes a mobile memory interface, allowing for integration in smartphones, tablets, and other portable electronics.
8. Package Type: Offered in a compact form factor, facilitating space-saving designs.
This combination of features makes the MT53E512M32D2NP-046 suitable for a variety of applications, particularly in mobile and embedded systems.
Package
The MT53E512M32D2NP-046 is packaged in a 78-ball FBG (Fine Ball Grid Array) format.
Pinout
The MT53E512M32D2NP-046 is a 16Gb (2GB) DDR3 SDRAM memory chip from Micron Technology. It has a pin count of 78 and is organized as 512 Meg x 32 bits (4 bits x 128M x 32). The primary function of this memory device is to serve as a high-speed memory solution for various applications, including consumer electronics, networking, and computing systems.
Key features include:
- Operating speed: DDR3 SDRAM
- Voltage: Typically operates at 1.5V
- Data rate: Can support data rates up to 1066 MT/s
- Interface: Uses a standard DDR3 interface for connectivity.
This device is designed for performance, efficiency, and compatibility with a range of systems, providing reliable data storage and retrieval.
Key features include:
- Operating speed: DDR3 SDRAM
- Voltage: Typically operates at 1.5V
- Data rate: Can support data rates up to 1066 MT/s
- Interface: Uses a standard DDR3 interface for connectivity.
This device is designed for performance, efficiency, and compatibility with a range of systems, providing reliable data storage and retrieval.
Manufacturer
The MT53E512M32D2NP-046 is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest manufacturers of DRAM (Dynamic Random Access Memory) and NAND flash memory. The company serves various markets, including computing, mobile, networking, and automotive industries. Micron is known for its innovation in memory technology and invests heavily in research and development to enhance performance and efficiency in its products.
Application
The MT53E512M32D2NP-046 is a 512Mb DDR4 DRAM memory chip, primarily used in high-performance computing applications such as servers, networking devices, and enterprise storage systems. It is suitable for data centers, AI and machine learning applications, as well as consumer electronics that require efficient data processing and fast access times. Its reliability and efficiency make it ideal for applications demanding high bandwidth and low latency.
Equivalent
The MT53E512M32D2NP-046 chip is a DDR4 SDRAM memory chip. Equivalent products typically include other DDR4 chips with similar specifications such as density (512Mb), organization (x32), and speed grades. Look for products from manufacturers like Samsung (K4A8G085WB), Micron (MT53E512M32D2PN), and Hynix (H5AN8G6NBJR) that match these parameters. Always check datasheets for exact compatibility.
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