圖片僅供參考

MT53E256M32D2DS-046 IT:B

Name: MT53E256M32D2DS-046 IT:B
Rating: 4.7 (12 reviews)

DRAM LPDDR4 8G 256MX32 FBGA DDP

製造商
製造商。部分 #MT53E256M32D2DS-046 IT:B
包
資料表 MT53E256M32D2DS-046 IT:B DataSheet
有現貨的3522

+BOM RFQ

100%原創；新

24小時準備發貨

365天保修

RFQ&；獲得更多折扣

規格

Packaging	Tray
Standard Pack Qty	1360

概述

Description

The MT53E256M32D2DS-046 IT:B is a type of DRAM memory chip manufactured by Micron Technology. Specifically, it is a DDR4 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) device, designed for high-performance computing applications. This chip has a capacity of 256 megabits (32 megabytes) organized in a 32-bit wide data bus, which allows for efficient data transfer and processing.
Key features include a speed grade of 1,600 MT/s (megatransfers per second), which allows for higher bandwidth compared to previous generations, and it operates at a voltage of 1.2V, enhancing energy efficiency. The "IT:B" designation indicates specific temperature and environmental ratings suitable for industrial applications.
This component is widely used in various applications, including servers, networking equipment, and embedded systems, where reliable and fast memory is critical. Its advanced architecture supports features like error correction and enhanced reliability, making it suitable for mission-critical tasks.

Features

The MT53E256M32D2DS-046 IT:B is a high-performance DDR4 DRAM memory chip produced by Micron Technology. Key features include:
1. Density: 256 Megabits (32 Megabytes) per chip.
2. Data Width: 32 bits, suitable for various applications requiring wide data paths.
3. Operating Frequency: Designed for operational speeds up to 2400 MT/s (megatransfers per second).
4. Voltage: Operates at a low voltage of 1.2V, enhancing energy efficiency.
5. Form Factor: Typically in a compact BGA (Ball Grid Array) package, facilitating easy integration into devices.
6. Temperature Range: Industrial grade, supporting a wide temperature range for reliable performance in harsh environments.
7. Features: Includes advanced error correction capabilities (ECC), ensuring data integrity and reliability.
This memory chip is ideal for applications in embedded systems, networking, and industrial environments where performance and stability are critical.

Package

The MT53E256M32D2DS-046 IT:B is a DDR4 SDRAM memory device packaged in a 78-ball FBGAs (Fine-pitch Ball Grid Array) format. This type of packaging is designed for efficient performance and compact integration in electronic systems.

Pinout

The MT53E256M32D2DS-046 IT:B is a DRAM memory device manufactured by Micron Technology. It features a pin count of 96. This memory device is part of the DDR4 SDRAM family, designed for high-performance applications.
The primary functions of the pins include data transfer, command and control signaling, as well as power and ground connections. Key pins include:
- DQs (Data Lines): 32 data pins for bidirectional data transfer.
- DQMs (Data Mask): Used to mask data during writes.
- CLK (Clock): For synchronizing data transfers.
- CS (Chip Select): Indicates when the chip is active.
- RAS, CAS, WE (Row Address Strobe, Column Address Strobe, Write Enable): Control signals for accessing memory rows and columns.
- VDD/VSS (Power/Ground): Supply voltage and ground connections.
This configuration supports high data rates and bandwidth suitable for modern computing environments.

Manufacturer

The MT53E256M32D2DS-046 IT:B is manufactured by Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, specializing in memory and storage technologies. The company's product portfolio includes DRAM, NAND flash memory, and NOR flash memory, serving various applications in computing, mobile devices, and consumer electronics. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovation in memory technology and plays a significant role in the semiconductor industry, contributing to advancements in data storage and processing. The company focuses on developing high-performance products to meet the evolving needs of various sectors, including cloud computing, artificial intelligence, and automotive industries.

Application

The MT53E256M32D2DS-046 IT:B is a DDR4 DRAM memory device primarily used in applications requiring high performance and reliability, such as networking equipment, servers, storage systems, and advanced computing platforms. Its low power consumption and high data rates make it suitable for data-intensive tasks in telecommunications, enterprise databases, and high-performance computing environments.

Equivalent

The MT53E256M32D2DS-046 IT:B chip is a DDR4 SDRAM memory device. Equivalent products from other manufacturers may include:
1. Samsung K4AAG085WE-BCRC
2. Micron MT40A256M32JR-075
3. Hynix H5AN8G6NBJR-UHC
Always verify specifications and compatibility for specific applications before substitution.