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MT53D512M16D1DS-046 IT:D
DRAM LPDDR4 8Gbit 16 200/264 WFBGA 1 IT
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概述
Description
The MT53D512M16D1DS-046 IT:D is a memory component from Micron Technology, specifically designed for high-performance applications. It is a 512 Megabit (64 Megabyte) DDR3 DRAM device, featuring a 16-bit data bus. The "D" in the part number indicates it is a DRAM chip, while "046" refers to the specific speed grade, which typically denotes its operating frequency or latency characteristics. The suffix "IT" indicates the temperature range, suitable for industrial applications.
This memory is used in various applications requiring reliable and efficient memory storage, such as embedded systems, networking devices, and industrial computers. Its architecture supports advanced features like low power consumption and high data transfer rates, making it suitable for modern electronic systems. The device also complies with industry standards for compatibility and performance.
This memory is used in various applications requiring reliable and efficient memory storage, such as embedded systems, networking devices, and industrial computers. Its architecture supports advanced features like low power consumption and high data transfer rates, making it suitable for modern electronic systems. The device also complies with industry standards for compatibility and performance.
Features
The MT53D512M16D1DS-046 IT:D is a DDR3 SDRAM memory chip from Micron Technology. It features a density of 512 Mb (megabits) organized as 16 bits x 32 (16M x 32). The part is designed for use in various applications, including mobile devices and consumer electronics.
Key features include:
- Data Rate: Operates at 1066 MT/s (megatransfers per second).
- Voltage: Operates at a low voltage of 1.5V, which contributes to power efficiency.
- Package Type: Provided in a compact FBGA (Fine Ball Grid Array) package, facilitating space-saving designs.
- Temperature Range: Industrial temperature range, suitable for demanding environments.
- Burst Length: Supports burst lengths of 8 and 4, enhancing data transfer efficiency.
This memory chip is ideal for applications requiring high performance and reliability in compact form factors.
Key features include:
- Data Rate: Operates at 1066 MT/s (megatransfers per second).
- Voltage: Operates at a low voltage of 1.5V, which contributes to power efficiency.
- Package Type: Provided in a compact FBGA (Fine Ball Grid Array) package, facilitating space-saving designs.
- Temperature Range: Industrial temperature range, suitable for demanding environments.
- Burst Length: Supports burst lengths of 8 and 4, enhancing data transfer efficiency.
This memory chip is ideal for applications requiring high performance and reliability in compact form factors.
Package
The MT53D512M16D1DS-046 IT:D is packaged in a 78-ball FBGAA (Fine Ball Grid Array) format. This type of package is designed for high-density memory applications, providing excellent thermal and electrical performance.
Pinout
The MT53D512M16D1DS-046 IT:D is a mobile DRAM component with a 78-pin configuration. It is a 512Mb (Megabit) DDR3 SDRAM device, organized as 16 bits x 32 banks.
The key functions of this component include:
1. Data Storage: It provides high-speed data storage for mobile applications.
2. Interface: It uses a DDR (Double Data Rate) interface, allowing for data transfer on both the rising and falling edges of the clock signal, effectively doubling the data rate.
3. Power Management: It features low power consumption modes suitable for battery-operated devices.
4. Access Time: The device supports a maximum clock frequency of 400 MHz (DDR3-800).
This component is commonly used in smartphones, tablets, and other portable electronic devices where efficient memory performance is crucial.
The key functions of this component include:
1. Data Storage: It provides high-speed data storage for mobile applications.
2. Interface: It uses a DDR (Double Data Rate) interface, allowing for data transfer on both the rising and falling edges of the clock signal, effectively doubling the data rate.
3. Power Management: It features low power consumption modes suitable for battery-operated devices.
4. Access Time: The device supports a maximum clock frequency of 400 MHz (DDR3-800).
This component is commonly used in smartphones, tablets, and other portable electronic devices where efficient memory performance is crucial.
Manufacturer
The MT53D512M16D1DS-046 IT:D is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets including computing, mobile, automotive, and industrial applications. The company is known for its innovation in memory technology and commitment to sustainability. Micron plays a critical role in advancing data storage solutions, enabling the performance of various electronic devices and systems.
Application
The MT53D512M16D1DS-046 IT:D is a DDR4 DRAM memory chip primarily used in high-performance computing applications, including servers, data centers, and networking equipment. It is also suitable for consumer electronics, gaming systems, and industrial applications that require reliable and efficient memory solutions. Its features support fast data processing and multitasking capabilities, making it ideal for applications demanding high bandwidth and low latency.
Equivalent
The MT53D512M16D1DS-046 IT:D chip is a DRAM device. Equivalent products include the following:
1. Micron MT53D512M16D1DS-062 IT:D
2. Samsung K4B4G1646E
3. Hynix H5TQ2G83AFR
4. Nanya NT5CC128M16HR-AC
Always verify specifications such as speed, voltage, and configuration for compatibility.
1. Micron MT53D512M16D1DS-062 IT:D
2. Samsung K4B4G1646E
3. Hynix H5TQ2G83AFR
4. Nanya NT5CC128M16HR-AC
Always verify specifications such as speed, voltage, and configuration for compatibility.
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