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MT53B256M32D1NP-062 WT:C
DRAM LPDDR4 8G 256MX32 FBGA
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| Packaging | Tray |
| Standard Pack Qty | 1360 |
概述
Description
The MT53B256M32D1NP-062 WT:C is a type of DRAM (Dynamic Random Access Memory) module manufactured by Micron Technology. It features a 256 Meg x 32 configuration, making it suitable for high-performance applications. This memory chip operates at a frequency of 1,600 MHz and utilizes a DDR3 interface, which provides improved data rates compared to earlier DDR generations.
The designation "062" indicates a specific speed grade, and "WT:C" refers to the packaging and temperature range specifications. This memory is commonly used in various applications, including servers, networking equipment, and embedded systems, where efficient and reliable memory performance is essential.
In summary, the MT53B256M32D1NP-062 WT:C is a high-density, high-speed DRAM solution designed to meet the demanding requirements of modern electronic devices.
The designation "062" indicates a specific speed grade, and "WT:C" refers to the packaging and temperature range specifications. This memory is commonly used in various applications, including servers, networking equipment, and embedded systems, where efficient and reliable memory performance is essential.
In summary, the MT53B256M32D1NP-062 WT:C is a high-density, high-speed DRAM solution designed to meet the demanding requirements of modern electronic devices.
Features
The MT53B256M32D1NP-062 WT:C is a 256 Meg x 32 bits DDR4 SDRAM memory device from Micron Technology. Key features include:
1. Density: 8 Gigabytes (256M x 32).
2. Data Rate: Operates at DDR4 speeds, typically supporting data rates up to 2400 MT/s or higher.
3. Interface: Unidirectional interface with a 32-bit data bus.
4. Voltage Supply: Operates on a 1.2V power supply, providing energy efficiency.
5. Package: Available in a compact FBGA package, facilitating space-saving designs.
6. Burst Length: Supports burst lengths of 8, enhancing data throughput.
7. Features: Comes with features like on-die termination (ODT), write leveling, and burst chop.
8. Latency: Optimized for low latency operation, improving overall system responsiveness.
This memory module is suitable for various applications, including servers, high-performance computing, and consumer electronics requiring significant memory bandwidth.
1. Density: 8 Gigabytes (256M x 32).
2. Data Rate: Operates at DDR4 speeds, typically supporting data rates up to 2400 MT/s or higher.
3. Interface: Unidirectional interface with a 32-bit data bus.
4. Voltage Supply: Operates on a 1.2V power supply, providing energy efficiency.
5. Package: Available in a compact FBGA package, facilitating space-saving designs.
6. Burst Length: Supports burst lengths of 8, enhancing data throughput.
7. Features: Comes with features like on-die termination (ODT), write leveling, and burst chop.
8. Latency: Optimized for low latency operation, improving overall system responsiveness.
This memory module is suitable for various applications, including servers, high-performance computing, and consumer electronics requiring significant memory bandwidth.
Package
The MT53B256M32D1NP-062 WT:C is a DDR4 SDRAM memory chip packaged in a 78-ball FBGAs (Fine-Pitch Ball Grid Array) format. This package type is designed for efficient thermal performance and space-saving applications in various electronic devices.
Pinout
The MT53B256M32D1NP-062 WT:C is a DRAM chip from Micron, specifically a DDR4 SDRAM device. It features a pin count of 78 pins.
The primary functions of this component include:
1. Memory Storage: It provides high-density memory storage (256 Meg x 32 bits).
2. Data Transfer: Supports high-speed data transfer rates essential for modern computing applications.
3. Power Management: Designed to operate efficiently with lower power consumption, suitable for mobile and embedded systems.
4. Interface: Utilizes a DDR4 interface for communication with the memory controller, supporting burst and pipelined access for improved performance.
This device is typically used in applications requiring large memory capacity, such as mobile devices, networking equipment, and other embedded systems.
The primary functions of this component include:
1. Memory Storage: It provides high-density memory storage (256 Meg x 32 bits).
2. Data Transfer: Supports high-speed data transfer rates essential for modern computing applications.
3. Power Management: Designed to operate efficiently with lower power consumption, suitable for mobile and embedded systems.
4. Interface: Utilizes a DDR4 interface for communication with the memory controller, supporting burst and pipelined access for improved performance.
This device is typically used in applications requiring large memory capacity, such as mobile devices, networking equipment, and other embedded systems.
Manufacturer
The MT53B256M32D1NP-062 WT:C is manufactured by Micron Technology, Inc. Micron is a leading American producer of memory and storage solutions, specializing in DRAM (Dynamic Random-Access Memory), NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron operates globally and serves various markets, including consumer electronics, computing, mobile, automotive, and data center sectors. The company is known for its innovation in memory technology, providing essential components for a wide range of applications, from personal devices to enterprise systems.
Application
The MT53B256M32D1NP-062 WT:C is a 2Gb DDR3 SDRAM memory chip used in various applications, including mobile devices, automotive systems, consumer electronics, and networking equipment. Its high-speed performance and low power consumption make it suitable for data-intensive tasks, such as gaming, multimedia processing, and advanced computing applications.
Equivalent
The MT53B256M32D1NP-062 WT:C chip is a DDR4 SDRAM device. Equivalent products can include other DDR4 chips with similar specifications, such as the Hynix H5AN8G6NAFR-TFC, Samsung K4A8G085WB-BCTD, or Micron MT40A256M32LY-075. Ensure to check for specific parameters like operating voltage, speed grade, and package type for compatibility.
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