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MT49H16M36BM-18:B
IC DRAM 576MBIT PARALLEL 144UBGA
- 製造商
- 製造商。 部分 #MT49H16M36BM-18:B
- 包 144-TFBGA
- 資料表
- 有現貨的5286
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規格
| Package | Bulk |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | DRAM |
| MemorySize | 576Mb (16M x 36) |
| MemoryInterface | Parallel |
| ClockFrequency | 533 MHz |
| AccessTime | 15 ns |
| Voltage-Supply | 1.7V ~ 1.9V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 144-TFBGA |
概述
Description
Features
Here are the typical features of the Micron MT49H16M36BM-18:B (ECC SDRAM):
- 16M × 36-bit organization (32 data bits + 4 ECC bits)
- Synchronous DRAM with ECC on data path
- 18 ns access time (speed grade)
- Burst length support (BL4/BL8)
- 4-bank organization
- Operating voltage standard (typical 3.3V, check datasheet for exact voltage range)
- Pb-free / RoHS-compliant package (BM variant)
- Temperature range and packaging per Micron datasheet (consult for exact specs)
Note: Please refer to the official MT49H16M36BM-18:B datasheet for precise electrical characteristics (voltage, timing, max/min ratings), timing parameters, and package details.
- 16M × 36-bit organization (32 data bits + 4 ECC bits)
- Synchronous DRAM with ECC on data path
- 18 ns access time (speed grade)
- Burst length support (BL4/BL8)
- 4-bank organization
- Operating voltage standard (typical 3.3V, check datasheet for exact voltage range)
- Pb-free / RoHS-compliant package (BM variant)
- Temperature range and packaging per Micron datasheet (consult for exact specs)
Note: Please refer to the official MT49H16M36BM-18:B datasheet for precise electrical characteristics (voltage, timing, max/min ratings), timing parameters, and package details.
Package
Ball-grid array (BGA) package.
Pinout
- Pin count: 68 pins (68-ball BGA package)
- Function: MT49H16M36BM-18:B is a 16M × 36-bit mobile SDRAM. It provides a 36-bit wide data bus (32 data bits + 4 ECC bits), uses multiplexed address lines for row/column, and includes bank/address/command signals (BA, CS, RAS, CAS, WE, CKE), a clock input, and power/ground pins (Vcc/Vccq and GND). Operates with 1.8V I/O (suffix -18 indicates 1.8V I/O).
- Function: MT49H16M36BM-18:B is a 16M × 36-bit mobile SDRAM. It provides a 36-bit wide data bus (32 data bits + 4 ECC bits), uses multiplexed address lines for row/column, and includes bank/address/command signals (BA, CS, RAS, CAS, WE, CKE), a clock input, and power/ground pins (Vcc/Vccq and GND). Operates with 1.8V I/O (suffix -18 indicates 1.8V I/O).
Manufacturer
Manufacturer: Micron Technology, Inc.
Type of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs, etc.).
Type of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs, etc.).
Application
MT49H16M36BM-18:B is a Micron 16M×36 ECC SDRAM (32-bit data + 4 ECC). Applications include:
- High-reliability servers and workstations
- Storage/RAID controllers
- Networking equipment
- Telecom infrastructure
- Embedded/industrial systems requiring ECC
- Memory buffers for FPGAs/ASICs
- High-reliability servers and workstations
- Storage/RAID controllers
- Networking equipment
- Telecom infrastructure
- Embedded/industrial systems requiring ECC
- Memory buffers for FPGAs/ASICs
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