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MT48LC8M32B2TG-7IT
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規格
| Manufacturer | Micron Tech |
| Package | TSOP-86 |
概述
Description
The MT48LC8M32B2TG-7IT is a 16Gb (gigabit) DRAM chip produced by Micron Technology, designed primarily for mobile applications. It is a DDR3 (Double Data Rate 3) synchronous dynamic random-access memory (SDRAM) device, featuring a 32-bit data bus and organized as 8 banks of 4Gb each. The "TG" indicates it uses a standard temperature range, while the "7IT" specifies its speed grade, with a maximum clock frequency of 1333 MT/s (megatransfers per second).
Key features include low power consumption, making it suitable for battery-operated devices, and a compact form factor. This chip is commonly used in smartphones, tablets, and other portable electronics, providing efficient data storage and transfer capabilities. The device adheres to industry standards for reliability and performance, supporting applications that require high bandwidth and low latency.
Key features include low power consumption, making it suitable for battery-operated devices, and a compact form factor. This chip is commonly used in smartphones, tablets, and other portable electronics, providing efficient data storage and transfer capabilities. The device adheres to industry standards for reliability and performance, supporting applications that require high bandwidth and low latency.
Features
The MT48LC8M32B2TG-7IT is a 256MB DDR2 SDRAM memory module from Micron Technology. Key features include:
- Density: 256 Megabits (32 Megabytes x 8 bits) organized as 8 banks of 32 bits each.
- Data Rate: Operates at a data rate of 400 MT/s (mega transfers per second).
- I/O Voltage: Uses a core voltage of 1.8V, which enhances power efficiency.
- Package Type: Comes in a 78-ball FBGA (Fine Ball Grid Array) package, suitable for compact designs.
- Latency: CL=5, ensuring efficient data retrieval.
- Operating Temperature: Designed for a commercial temperature range of 0°C to 70°C.
- Features: Supports burst mode, self-refresh, and write leveling, enhancing performance for various applications.
- Compatibility: Ideal for use in various devices including laptops, networking equipment, and embedded systems.
This memory chip is designed for high-performance applications requiring fast data processing with lower power consumption.
- Density: 256 Megabits (32 Megabytes x 8 bits) organized as 8 banks of 32 bits each.
- Data Rate: Operates at a data rate of 400 MT/s (mega transfers per second).
- I/O Voltage: Uses a core voltage of 1.8V, which enhances power efficiency.
- Package Type: Comes in a 78-ball FBGA (Fine Ball Grid Array) package, suitable for compact designs.
- Latency: CL=5, ensuring efficient data retrieval.
- Operating Temperature: Designed for a commercial temperature range of 0°C to 70°C.
- Features: Supports burst mode, self-refresh, and write leveling, enhancing performance for various applications.
- Compatibility: Ideal for use in various devices including laptops, networking equipment, and embedded systems.
This memory chip is designed for high-performance applications requiring fast data processing with lower power consumption.
Package
The MT48LC8M32B2TG-7IT is packaged in a TSOP-II (Thin Small Outline Package) form factor. This package type is typically used for DRAM chips and features a flat, rectangular shape with a low profile for efficient space utilization on PCBs.
Pinout
The MT48LC8M32B2TG-7IT is a DRAM memory chip from Micron Technology. It features a pin count of 54 pins.
This device is a 256Mb (megabit) SDRAM organized as 8M x 32 bits, and it operates at a maximum clock frequency of 100 MHz (7 ns cycle time). The chip includes functions for data input/output, address input, and control signals essential for memory operations, such as row and column addressing, read/write control, and data masking.
Key pins include:
- DQ (Data Input/Output): for data transfer
- A (Address): for row and column addressing
- RAS, CAS, WE (Control inputs): for read/write operations
- VDD/VSS (Power supply): for power connections
This configuration allows for efficient data storage and retrieval in various applications.
This device is a 256Mb (megabit) SDRAM organized as 8M x 32 bits, and it operates at a maximum clock frequency of 100 MHz (7 ns cycle time). The chip includes functions for data input/output, address input, and control signals essential for memory operations, such as row and column addressing, read/write control, and data masking.
Key pins include:
- DQ (Data Input/Output): for data transfer
- A (Address): for row and column addressing
- RAS, CAS, WE (Control inputs): for read/write operations
- VDD/VSS (Power supply): for power connections
This configuration allows for efficient data storage and retrieval in various applications.
Manufacturer
The MT48LC8M32B2TG-7IT is manufactured by Micron Technology, Inc. Micron is a leading American manufacturer of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. The company serves a diverse range of markets, including computing, mobile, consumer electronics, automotive, and enterprise storage. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovation and contributions to memory technology, playing a crucial role in advancing data storage solutions globally.
Application
The MT48LC8M32B2TG-7IT is a 512MB DDR3 SDRAM memory chip used in various applications, including consumer electronics, mobile devices, computers, networking equipment, and automotive systems. Its high-speed data transfer capabilities make it suitable for applications requiring efficient memory performance, such as gaming consoles, tablets, and embedded systems. Additionally, it is utilized in industrial automation and telecommunications for data buffering and storage.
Equivalent
Equivalent products to the MT48LC8M32B2TG-7IT chip include the following DRAM chips:
- Nanya NT5CB256M8DN-6
- Hynix HY57V2882G2B
- Samsung K4B4G1646E
Ensure compatibility by checking specifications such as pin configuration, timing parameters, and voltage levels before replacement.
- Nanya NT5CB256M8DN-6
- Hynix HY57V2882G2B
- Samsung K4B4G1646E
Ensure compatibility by checking specifications such as pin configuration, timing parameters, and voltage levels before replacement.
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