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MT48LC4M16A2P-75:G
IC DRAM 64MBIT PAR 54TSOP II
- 製造商
- 製造商。 部分 #MT48LC4M16A2P-75:G
- 包 54-TSOP (0.400, 10.16mm Width)
- 資料表
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規格
| Supplier | Micron Technology Inc. |
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM |
| MemorySize | 64Mb (4M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 133 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 5.4 ns |
| Voltage-Supply | 3V ~ 3.6V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 54-TSOP (0.400, 10.16mm Width) |
概述
Description
MT48LC4M16A2P-75:G is Micron’s 64-Mbit (8 MB) Synchronous DRAM (SDRAM) with a 4M × 16 organization. Key points:
- Capacity/organization: 4,194,304 words × 16 bits (total 64 Mbit)
- Speed/voltage: -75 (75 ns), typically 3.3 V
- Interface: 16-bit data bus, multiplexed address/command inputs; standard SDRAM timing with CS, RAS, CAS, WE, CK/CK#
- Banks: multi-bank architecture (usually 4 banks)
- Refresh: requires periodic auto-refresh
- Packaging suffixes: -P indicates a package option; G denotes RoHS-compliant (lead-free)
- Use: general system memory in embedded systems, motherboards, and older PCs/boards
In short, an 8 MB SDRAM module-to-be used with a 3.3 V supply and standard SDRAM control signals, with RoHS-compliant packaging.
- Capacity/organization: 4,194,304 words × 16 bits (total 64 Mbit)
- Speed/voltage: -75 (75 ns), typically 3.3 V
- Interface: 16-bit data bus, multiplexed address/command inputs; standard SDRAM timing with CS, RAS, CAS, WE, CK/CK#
- Banks: multi-bank architecture (usually 4 banks)
- Refresh: requires periodic auto-refresh
- Packaging suffixes: -P indicates a package option; G denotes RoHS-compliant (lead-free)
- Use: general system memory in embedded systems, motherboards, and older PCs/boards
In short, an 8 MB SDRAM module-to-be used with a 3.3 V supply and standard SDRAM control signals, with RoHS-compliant packaging.
Features
Here are the key features of MT48LC4M16A2P-75:G (concise):
- 64-Mbit SDRAM: 4M x 16 organization (8 MB total in package terms).
- Speed grade: -75, i.e., 75 ns access time.
- Synchronous DRAM: controlled by a clock (CK) with standard SDRAM command inputs (RAS, CAS, WE, CS).
- Multi-bank architecture with interleaved operation for better throughput.
- Burst mode: supports burst Read/Write (typical BL=4; sequential burst type with programmable CAS latency).
- Auto-refresh and self-refresh capabilities to maintain data integrity.
- Single-supply operation (3.3V) with Pb-free packaging (G suffix indicates RoHS-compliant).
- Compatible I/O timing and control signals suitable for standard SDRAM interfaces.
Note: Exact CAS latency options and bank count may vary by device revision; refer to the official datasheet for precise mode-register and timing parameters.
- 64-Mbit SDRAM: 4M x 16 organization (8 MB total in package terms).
- Speed grade: -75, i.e., 75 ns access time.
- Synchronous DRAM: controlled by a clock (CK) with standard SDRAM command inputs (RAS, CAS, WE, CS).
- Multi-bank architecture with interleaved operation for better throughput.
- Burst mode: supports burst Read/Write (typical BL=4; sequential burst type with programmable CAS latency).
- Auto-refresh and self-refresh capabilities to maintain data integrity.
- Single-supply operation (3.3V) with Pb-free packaging (G suffix indicates RoHS-compliant).
- Compatible I/O timing and control signals suitable for standard SDRAM interfaces.
Note: Exact CAS latency options and bank count may vary by device revision; refer to the official datasheet for precise mode-register and timing parameters.
Package
TSOP II plastic package, 54-pin (Pb-free, denoted by the -G suffix).
Pinout
- Pin count: 54 pins (TSOP II, Pb-free G suffix).
- Function: Micron MT48LC4M16A2P-75:G is a 64-Mbit, 4M × 16-bit, low-power Synchronous DRAM (SDRAM) with multiplexed row/column addresses, 2 banks. It uses CK and /CK clocks, /CS, /RAS, /CAS, /WE, BA0–BA1, A0–A21, DQ0–DQ15, DQM, plus Vcc/Vss. Speed grade is -75 ns (1.8V operation).
- Function: Micron MT48LC4M16A2P-75:G is a 64-Mbit, 4M × 16-bit, low-power Synchronous DRAM (SDRAM) with multiplexed row/column addresses, 2 banks. It uses CK and /CK clocks, /CS, /RAS, /CAS, /WE, BA0–BA1, A0–A21, DQ0–DQ15, DQM, plus Vcc/Vss. Speed grade is -75 ns (1.8V operation).
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational corporation that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, SSDs). Headquartered in Boise, Idaho, and one of the world’s largest memory chip makers.
- What kind of company: An American multinational corporation that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, SSDs). Headquartered in Boise, Idaho, and one of the world’s largest memory chip makers.
Application
RoHS-compliant 4M x 16-bit SDRAM (MT48LC4M16A2P-75:G) used as general system memory in embedded systems, consumer electronics, and networking/industrial equipment; part of memory subsystems in older desktops/notebooks; suitable for graphics/video buffering; any application needing a 64 Mbit, 16-bit wide SDRAM with 75 ns access.
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