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MT48LC32M8A2P-6A:D

Name: MT48LC32M8A2P-6A:D
Rating: 4.7 (12 reviews)

IC DRAM 256MBIT PAR 54TSOP II

製造商
製造商。部分 #MT48LC32M8A2P-6A:D
包 54-TSOP (0.400, 10.16mm Width)
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規格

Supplier	Micron Technology Inc.
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	256Mb (32M x 8)
MemoryInterface	Parallel
ClockFrequency	167 MHz
WriteCycleTime-WordPage	12ns
AccessTime	5.4 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	0°C ~ 70°C (TA)
MountingType	Surface Mount
Package/Case	54-TSOP (0.400, 10.16mm Width)

概述

Description

MT48LC32M8A2P-6A:D is Micron’s 256‑Mbit SDRAM device. Key points:
- Organization: 32M x 8 (32 mega words by 8 bits) for 256 Mbits total.
- Interface: Synchronous DRAM with multiplexed address inputs and a bidirectional data bus; standard SDRAM command set (RAS, CAS, WE, CE, etc.).
- Voltage/Package: Low‑voltage device (typical 2.5V operation) in a 48‑pin TSOP/TSOP‑II style package.
- Speed grade: -6A indicates the speed grade (around 6 ns class), with timing appropriate to that grade.
- Features: Burst access, auto/self-refresh, multiple banks, and typical SDRAM timing parameters.
- Applications: System memory for embedded systems, consumer electronics, and other products requiring high‑density RAM.
Note: For exact electrical specs, timings (tRCD, tRP, tCAS), burst lengths, and pinout, consult the Micron MT48LC32M8A2P-6A:D datasheet.

Features

MT48LC32M8A2P-6A:D is a Micron 256-Mbit synchronous DRAM. Key features:
- Organization: 32M x 8 (256 Mb total)
- Fully synchronous with a clocked command interface
- Multi-bank architecture (typ. 4 banks)
- Burst modes: Burst length 2/4/8; Burst type sequential or interleaved
- Programmable CAS latency (typical CL=2 or 3, depending on timing)
- Auto-Refresh and Self-Refresh support
- Page-mode/prefetching for rapid data access
- Operating voltage and I/O compatible with 3.3V domain (assemblies vary by package)
- Speed grade: -6A (high-speed variant)
- Package: TSOP II, D suffix (54-pin or similar, package variant)
- Commercial temperature range
Note: exact timing parameters (tRP, tRCD, tCAS, etc.) and voltage specifics depend on the final device revision and packaging. For precise timings, consult the Micron datasheet for MT48LC32M8A2P-6A:D.

Package

TSOP II (54-pin) plastic surface-mount package.

Pinout

Pin count: 54 pins (TSOP II package).
Function: 32 Mbit × 8-bit Synchronous DRAM (SDRAM) operated at 3.3 V, with multiplexed address lines and standard SDRAM control signals (CS, RAS, CAS, WE, CKE, DQ, DQM).

Manufacturer

- Manufacturer: Micron Technology, Inc.
- Kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, SSDs) and other memory-related components.

Application

MT48LC32M8A2P-6A:D is a low-power mobile SDRAM used as main memory in portable/embedded systems. Typical applications: notebook/laptop computers, handheld devices (PDA, digital cameras, MP3 players), game consoles, set-top boxes, and other consumer/embedded electronics needing compact, energy‑efficient DRAM.

Equivalent

MT48LC32M8A2P-6A:D is a 256 Mb (32M x 8) SDRAM, 3.3 V, with speed grade -6A:D. There is no universal one-for-one equivalent; substitutes depend on identical organization, voltage and timing. To find exact cross‑references, use Micron’s Cross Reference tool or distributor catalogs to locate other 32M×8, 3.3V SDRAMs with the same timing (e.g., -6A) from Micron and equivalent parts from Samsung, Hynix, SK hynix, etc.