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MT47H64M16NF-25EIT:M
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規格
| Manufacturer | Micron Tech |
| Package | FBGA-84 |
概述
Description
The MT47H64M16NF-25EIT:M is a type of DRAM (Dynamic Random Access Memory) chip, specifically a DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic RAM). It is designed for high-performance and high-speed data processing applications. The "64M16" in its name indicates that it has a memory organization of 64 megabits by 16, meaning it can store a total of 1 gigabit of data.
This component is often used in systems that require efficient data handling, such as computers, servers, and networking equipment. The "25E" in its designation suggests that it operates with a speed grade of 400MHz or a data rate of 800 MT/s (megatransfers per second), which refers to its ability to transfer data rapidly.
The "I" stands for industrial grade, indicating it is designed to operate in a wide range of temperatures, typically from -40°C to +85°C, making it suitable for use in harsher environments. The "T" in the name denotes a thin small-outline package (TSOP), which is designed for surface mount technology (SMT) applications, providing a compact form factor to save space on circuit boards.
This component is often used in systems that require efficient data handling, such as computers, servers, and networking equipment. The "25E" in its designation suggests that it operates with a speed grade of 400MHz or a data rate of 800 MT/s (megatransfers per second), which refers to its ability to transfer data rapidly.
The "I" stands for industrial grade, indicating it is designed to operate in a wide range of temperatures, typically from -40°C to +85°C, making it suitable for use in harsher environments. The "T" in the name denotes a thin small-outline package (TSOP), which is designed for surface mount technology (SMT) applications, providing a compact form factor to save space on circuit boards.
Features
The MT47H64M16NF-25EIT:M is a DRAM (Dynamic Random-Access Memory) chip from Micron Technology. It is part of the DDR2 SDRAM family, which offers several features:
1. Density and Organization: This model provides 1Gb (Gigabit) density and is organized as 64M x 16, meaning it has 64 million rows with 16 bits per row.
2. Speed and Performance: It operates at a clock speed of 400 MHz, enabling data transfer rates of up to 800 MT/s (Mega Transfers per second). The -25EIT variant indicates it has a CL (CAS Latency) of 5 cycles.
3. Operating Temperature: The "IT" in the part number denotes industrial temperature range, which typically supports operation from -40°C to +85°C, making it suitable for rugged environments.
4. Voltage: It requires an operating voltage of 1.8V, which is standard for DDR2.
5. Packaging: The chip is available in a 84-ball FBGA (Fine-pitch Ball Grid Array) package, optimizing space in electronic designs.
6. Compatibility: It is backward compatible with DDR2 standards, providing ease of integration into various systems that require reliable memory solutions.
These features make it suitable for a range of applications, including computing, networking, and industrial systems.
1. Density and Organization: This model provides 1Gb (Gigabit) density and is organized as 64M x 16, meaning it has 64 million rows with 16 bits per row.
2. Speed and Performance: It operates at a clock speed of 400 MHz, enabling data transfer rates of up to 800 MT/s (Mega Transfers per second). The -25EIT variant indicates it has a CL (CAS Latency) of 5 cycles.
3. Operating Temperature: The "IT" in the part number denotes industrial temperature range, which typically supports operation from -40°C to +85°C, making it suitable for rugged environments.
4. Voltage: It requires an operating voltage of 1.8V, which is standard for DDR2.
5. Packaging: The chip is available in a 84-ball FBGA (Fine-pitch Ball Grid Array) package, optimizing space in electronic designs.
6. Compatibility: It is backward compatible with DDR2 standards, providing ease of integration into various systems that require reliable memory solutions.
These features make it suitable for a range of applications, including computing, networking, and industrial systems.
Package
The MT47H64M16NF-25EIT:M is a DRAM memory chip from Micron Technology. The package type for this component is a 84-ball FBGA (Fine-Pitch Ball Grid Array).
Pinout
The MT47H64M16NF-25EIT:M is a DRAM module from Micron's DDR2 SDRAM product line. It typically comes in a 84-ball Fine-Pitch Ball Grid Array (FBGA) package. The "64M16" in the part number indicates that the module is organized as 64 megabits by 16 bits, which is a common configuration for this type of memory.
Regarding its function, this DDR2 SDRAM is used for providing high-speed data storage and access in computing systems. It is designed for applications that require a high memory bandwidth, such as in computing and networking devices. The key features of DDR2 SDRAM include a double data rate interface, where data is transferred on both the rising and falling edges of the clock signal, leading to improved performance over earlier DRAM technologies.
The "25EIT" specifies the speed grade and temperature range, indicating it has a CAS latency of 5 cycles and operates efficiently within industrial temperature ranges.
Regarding its function, this DDR2 SDRAM is used for providing high-speed data storage and access in computing systems. It is designed for applications that require a high memory bandwidth, such as in computing and networking devices. The key features of DDR2 SDRAM include a double data rate interface, where data is transferred on both the rising and falling edges of the clock signal, leading to improved performance over earlier DRAM technologies.
The "25EIT" specifies the speed grade and temperature range, indicating it has a CAS latency of 5 cycles and operates efficiently within industrial temperature ranges.
Manufacturer
The MT47H64M16NF-25EIT:M is a DRAM (Dynamic Random-Access Memory) chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs), catering to various markets such as consumer electronics, data centers, automotive, and industrial applications. Micron is known for its innovation and focus on advancing memory technology to meet the increasing demands for data processing and storage in the digital age.
Application
The MT47H64M16NF-25EIT:M is a DDR2 SDRAM memory chip, commonly used in applications requiring fast data processing and high memory bandwidth. These include computing systems, networking equipment, consumer electronics, and industrial automation. It is suitable for devices that require efficient multitasking and data handling capabilities, such as servers, routers, gaming consoles, and embedded systems. Its reliability and performance make it a preferred choice in environments demanding robust and rapid memory solutions.
Equivalent
The MT47H64M16NF-25EIT:M is a 1Gb DDR2 SDRAM chip from Micron. Equivalent products would include DDR2 SDRAM chips with similar specifications from other manufacturers, such as:
1. Hynix HY5PS1G1631C - 1Gb DDR2 SDRAM.
2. Samsung K4T1G164QF - 1Gb DDR2 SDRAM.
3. Nanya NT5TU64M16GG - 1Gb DDR2 SDRAM.
Ensure compatibility by comparing specific parameters like speed, voltage, and temperature ratings.
1. Hynix HY5PS1G1631C - 1Gb DDR2 SDRAM.
2. Samsung K4T1G164QF - 1Gb DDR2 SDRAM.
3. Nanya NT5TU64M16GG - 1Gb DDR2 SDRAM.
Ensure compatibility by comparing specific parameters like speed, voltage, and temperature ratings.
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