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MT47H256M8EB-25E IT:C
DRAM DDR2 2G 256MX8 FBGA
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| Packaging | Tray |
| Standard Pack Qty | 1320 |
概述
Description
The MT47H256M8EB-25E IT:C is a 2Gb DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip manufactured by Micron Technology. It features a 256M x 8 organization and operates at a clock speed of 800 MT/s, with a data transfer rate of 6.4 GT/s. This memory device is designed for various applications, including computing and networking, providing enhanced performance and efficiency.
Key specifications include a 1.5V operating voltage, built-in self-test features, and a temperature grade of Industrial (IT:C), which allows it to function reliably in a wider range of environmental conditions. The chip supports 8-bit data input/output and comes in a compact package suitable for high-density applications. It is commonly used in embedded systems, telecommunications, and industrial equipment.
Overall, the MT47H256M8EB-25E IT:C is a versatile and reliable memory solution, ideal for applications requiring durable performance and efficiency in challenging conditions.
Key specifications include a 1.5V operating voltage, built-in self-test features, and a temperature grade of Industrial (IT:C), which allows it to function reliably in a wider range of environmental conditions. The chip supports 8-bit data input/output and comes in a compact package suitable for high-density applications. It is commonly used in embedded systems, telecommunications, and industrial equipment.
Overall, the MT47H256M8EB-25E IT:C is a versatile and reliable memory solution, ideal for applications requiring durable performance and efficiency in challenging conditions.
Features
The MT47H256M8EB-25E IT:C is a DDR3 SDRAM memory chip produced by Micron Technology. Key features include:
1. Density: 256 Meg x 8 bits (256Mbit) configuration, allowing for a total of 256 Megabytes of storage.
2. Speed: Operates at a data rate of 1600 MT/s, with a clock frequency of up to 800 MHz.
3. Voltage: Low operating voltage of 1.5V, which helps reduce power consumption compared to older memory technologies.
4. Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package.
5. Features: Supports features such as burst length of 8, self-refresh, and on-die termination (ODT).
6. Compatibility: Designed for use in various applications, including consumer electronics, networking, and telecommunications devices.
This chip provides a good balance of performance and efficiency, making it suitable for modern computing needs.
1. Density: 256 Meg x 8 bits (256Mbit) configuration, allowing for a total of 256 Megabytes of storage.
2. Speed: Operates at a data rate of 1600 MT/s, with a clock frequency of up to 800 MHz.
3. Voltage: Low operating voltage of 1.5V, which helps reduce power consumption compared to older memory technologies.
4. Package Type: Typically available in a 78-ball FBGA (Fine Ball Grid Array) package.
5. Features: Supports features such as burst length of 8, self-refresh, and on-die termination (ODT).
6. Compatibility: Designed for use in various applications, including consumer electronics, networking, and telecommunications devices.
This chip provides a good balance of performance and efficiency, making it suitable for modern computing needs.
Package
The MT47H256M8EB-25E IT:C is a DDR3 SDRAM memory chip typically packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type provides a compact footprint and efficient thermal performance for integrated circuit applications.
Pinout
The MT47H256M8EB-25E IT:C is a DDR3 SDRAM memory chip manufactured by Micron Technology. It has a pin count of 78 pins.
This memory device features a storage capacity of 2 Gb (256MB) and operates with a data rate of 1600 MT/s (megatransfers per second). The device is designed for use in various applications, including laptops, PCs, and other memory-intensive devices.
The key functions of this chip include data storage, buffering, and providing high-speed access to data during read and write operations, making it suitable for dynamic data tasks. It supports a 64-bit data bus and operates with a supply voltage of 1.5V, ensuring compatibility with modern system architectures.
This memory device features a storage capacity of 2 Gb (256MB) and operates with a data rate of 1600 MT/s (megatransfers per second). The device is designed for use in various applications, including laptops, PCs, and other memory-intensive devices.
The key functions of this chip include data storage, buffering, and providing high-speed access to data during read and write operations, making it suitable for dynamic data tasks. It supports a 64-bit data bus and operates with a supply voltage of 1.5V, ensuring compatibility with modern system architectures.
Manufacturer
The manufacturer of the MT47H256M8EB-25E IT:C is Micron Technology, Inc. Micron is a leading global supplier of advanced semiconductor solutions, specializing in memory and storage technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash memory, and 3D XPoint technology for various applications such as computing, networking, mobile, and automotive markets. The company is known for its innovation in memory technology and plays a crucial role in the electronics supply chain, supporting industries that rely on data storage and processing.
Application
The MT47H256M8EB-25E IT:C is a DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, computing devices, networking equipment, automotive systems, and industrial controls. It is suitable for applications requiring high-speed data processing and reliable performance, including laptops, servers, and embedded systems.
Equivalent
The MT47H256M8EB-25E IT:C is a DDR3 SDRAM memory chip. Equivalent products include:
1. Nanya NT5CB256M8DN-25
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646F-BCK0
4. Micron MT41K256M16HA-125
Always check specifications for compatibility regarding voltage, speed, and organization before substituting.
1. Nanya NT5CB256M8DN-25
2. Hynix H5TQ2G83AFR
3. Samsung K4B4G1646F-BCK0
4. Micron MT41K256M16HA-125
Always check specifications for compatibility regarding voltage, speed, and organization before substituting.
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