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MT47H256M4CF-25E:H

Name: MT47H256M4CF-25E:H
Rating: 4.7 (12 reviews)

IC DRAM 1GBIT PARALLEL 60FBGA

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製造商。部分 #MT47H256M4CF-25E:H
包 60-TFBGA
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規格

Supplier	Micron Technology Inc.
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR2
MemorySize	1Gb (256M x 4)
MemoryInterface	Parallel
ClockFrequency	400 MHz
WriteCycleTime-WordPage	15ns
AccessTime	400 ps
Voltage-Supply	1.7V ~ 1.9V
OperatingTemperature	0°C ~ 85°C (TC)
MountingType	Surface Mount
Package/Case	60-TFBGA

概述

Description

MT47H256M4CF-25E:H is a Micron DRAM device from the MT47H family. Key points:
- Type: High-density mobile/Synchronous DRAM (DRAM) used as system memory in embedded/mobile applications.
- Organization: 256M x 4 (256 million words of 4 bits each), giving a total density of about 1 Gbit.
- Interface: DDR-like synchronous memory (requires a compatible memory controller and timing to drive data transfers).
- Purpose: Used as main memory in devices where space and power are constrained; typically in SoCs, mobile systems, or compact modules.
- Suffix meaning: The -25E:H portion encodes speed grade, temperature range, and packaging/revision; exact voltage, timing, and temperature specs are specified in the Micron datasheet.
Note: For precise voltage (e.g., 1.2V/1.8V), timings, data rates, temperature range, and package details, consult the official Micron MT47H256M4CF-25E:H datasheet.

Package

96-ball FBGA (FBGA-96) package.

Pinout

- Pin count: Typically 54 pins (TSOP-II package for MT47H256M4CF-25E:H).
- Function: 1-Gbit DDR2 SDRAM organized as 256M × 4 (4-bit wide data path). It is a synchronous memory with standard DDR2 address/command inputs (A[…], BA[1:0], CS#, RAS#, CAS#, WE#), control lines (CK/CK#, CKE), and data I/O (DQ[3:0]) plus data-strobe (DQS) and data-mask (DM).

Manufacturer

Manufacturer: Micron Technology, Inc.
Description: Micron is an American multinational memory and storage semiconductor company that designs and manufactures DRAM, NAND flash, and other memory/storage components (SSDs, memory modules) for electronics and data storage products.

Application

MT47H256M4CF-25E:H is a 256-Mbit ×4 SDRAM (industrial/extended-temp). Common applications include:
- Embedded/industrial and automotive electronics needing high-density RAM
- Graphics, multimedia and display systems
- Consumer electronics (set‑top boxes, DVRs, smart TVs)
- Networking equipment (routers, switches, storage controllers) for buffers
- FPGA/ASIC-based systems requiring external SDRAM
- Any application requiring reliable DRAM with an extended temperature range

Equivalent

MT47H256M4CF-25E:H is Micron’s 1 Gbit DDR2 SDRAM (256M x 4). Equivalents are other vendors’ 1 Gbit DDR2 SDRAMs with x4 organization and the same speed grade and voltage. For exact cross-references, use Micron’s cross-reference tool or distributor catalogs. Potential substitutes come from Samsung, Hynix, Elpida/Nanya, etc., but exact part numbers depend on package and timing.