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MT46V16M16P-5B:K
DRAM
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概述
Description
The MT46V16M16P-5B:K is a DRAM memory chip manufactured by Micron Technology. It features a 256Mb (megabit) capacity, organized as 16 bits wide and 16 banks, making it suitable for various applications that require moderate memory density. This specific model operates at a clock speed of 5 ns, indicating its performance speed.
It is designed for use in consumer electronics, networking equipment, and computing devices, providing reliable memory solutions. The "5B" designation refers to its access time, while the "K" at the end indicates it is part of a specific product series.
Key features include low power consumption, support for various data rates, and compatibility with standard memory interfaces. These characteristics make the MT46V16M16P-5B:K an essential component for manufacturers looking to optimize the performance and efficiency of their devices.
It is designed for use in consumer electronics, networking equipment, and computing devices, providing reliable memory solutions. The "5B" designation refers to its access time, while the "K" at the end indicates it is part of a specific product series.
Key features include low power consumption, support for various data rates, and compatibility with standard memory interfaces. These characteristics make the MT46V16M16P-5B:K an essential component for manufacturers looking to optimize the performance and efficiency of their devices.
Features
The MT46V16M16P-5B:K is a DRAM (Dynamic Random Access Memory) device from Micron Technology, specifically a DDR3 SDRAM. Key features include:
1. Memory Density: 256 Megabits (16 Megabytes) organized in 16 bits.
2. Speed Grade: Operates at a clock speed of 400 MT/s (Mega Transfers per second).
3. Voltage: Low voltage operation at 1.5V, which helps reduce power consumption.
4. Package Type: Available in a 54-ball TFBGA package, offering a compact form factor for space-constrained applications.
5. Data Rate: Supports high data rates suitable for various applications, including consumer electronics and computing devices.
6. Applications: Commonly used in mobile devices, laptops, and embedded systems due to its balance of performance and efficiency.
This device is ideal for applications requiring reliable and efficient memory solutions.
1. Memory Density: 256 Megabits (16 Megabytes) organized in 16 bits.
2. Speed Grade: Operates at a clock speed of 400 MT/s (Mega Transfers per second).
3. Voltage: Low voltage operation at 1.5V, which helps reduce power consumption.
4. Package Type: Available in a 54-ball TFBGA package, offering a compact form factor for space-constrained applications.
5. Data Rate: Supports high data rates suitable for various applications, including consumer electronics and computing devices.
6. Applications: Commonly used in mobile devices, laptops, and embedded systems due to its balance of performance and efficiency.
This device is ideal for applications requiring reliable and efficient memory solutions.
Package
The MT46V16M16P-5B:K is a DRAM memory chip packaged in a 54-ball TFBGA (Thin Fine Pitch Ball Grid Array) package. This package type is designed for compactness and efficient thermal performance in various applications.
Pinout
The MT46V16M16P-5B:K is a 256Mb DRAM (Dynamic Random Access Memory) chip with a pin count of 54. It operates as a x16 configuration, which means it has a data width of 16 bits.
Key functions of this chip include:
- Addressing: It supports a range of address inputs to access its memory cells.
- Data Input/Output: The x16 interface allows for simultaneous data read and write operations.
- Control Signals: It includes control pins such as Chip Select (CS), Write Enable (WE), and Read Enable (OE) to manage memory operations.
- Refresh: The memory requires periodic refresh cycles to maintain data integrity.
This chip typically operates at speeds defined by its speed grade (5B), with a supply voltage of 2.5V.
Key functions of this chip include:
- Addressing: It supports a range of address inputs to access its memory cells.
- Data Input/Output: The x16 interface allows for simultaneous data read and write operations.
- Control Signals: It includes control pins such as Chip Select (CS), Write Enable (WE), and Read Enable (OE) to manage memory operations.
- Refresh: The memory requires periodic refresh cycles to maintain data integrity.
This chip typically operates at speeds defined by its speed grade (5B), with a supply voltage of 2.5V.
Manufacturer
The manufacturer of the MT46V16M16P-5B:K is Micron Technology, Inc. Micron is a global leader in advanced semiconductor solutions, specializing in memory and storage technologies, including DRAM, NAND flash, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse range of markets, including computing, mobile, automotive, industrial, and consumer electronics. The company is known for its innovation in memory products and is a key player in the semiconductor industry, focusing on high-performance and high-capacity memory solutions.
Application
The MT46V16M16P-5B:K is a 256Mb DDR SDRAM memory chip commonly used in applications such as consumer electronics, mobile devices, automotive systems, networking hardware, and industrial applications. It provides high-speed data processing and is suitable for devices requiring efficient memory solutions, including smartphones, tablets, and gaming consoles.
Equivalent
The MT46V16M16P-5B is a 256Mb (16M x 16) DRAM chip. Equivalent products include the Samsung K4S641632H, Hynix HY57V641620B, and Micron MT46V16M16P-6A. Ensure compatibility with specifications such as voltage, package type, and speed grade when considering alternatives.
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