MT46H32M16LFBF-6 IT:C

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MT46H32M16LFBF-6 IT:C

DRAM

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概述

Description

The MT46H32M16LFBF-6 IT:C is a specific model of DDR3 SDRAM memory chip produced by Micron Technology. It features a density of 512Mb (megabits), organized as 32 bits wide and 16 banks, making it suitable for various applications, including computing and mobile devices. The "LFBF" indicates it is a low-power variant, and the "-6" signifies a speed grade of 6 ns, meaning it can operate at a frequency of approximately 333 MHz. The "IT" stands for industrial temperature range, which indicates it can operate in harsher environmental conditions, typically from -40°C to +85°C. This chip is designed for use in applications requiring reliable memory performance, such as network infrastructure and industrial systems. Overall, the MT46H32M16LFBF-6 IT:C is characterized by its efficiency, robustness, and suitability for demanding environments.

Features

The MT46H32M16LFBF-6 IT:C is a DDR3 SDRAM memory chip from Micron Technology. Here are its key features:
1. Memory Type: DDR3 SDRAM.
2. Configuration: 32 Meg x 16, which equates to a total capacity of 512 Megabits (64 Megabytes).
3. Speed: Operates at a speed grade of -6, meaning it supports a data rate of 1066 MT/s (mega-transfers per second).
4. Voltage: Typically operates at a low voltage of 1.5V, aligning with DDR3 standards.
5. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating compact design.
6. Temperature Range: Industrial grade (IT) variant supports a broader temperature range for reliability in harsh conditions.
7. Features: Includes features like on-die termination (ODT), burst lengths of 8 and 4, and supports various modes of operation, enhancing power efficiency and performance.
This chip is suitable for applications requiring reliable memory in industrial environments.

Package

The MT46H32M16LFBF-6 IT:C is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This package type is designed for high-density memory applications, offering good thermal and electrical performance.

Pinout

The MT46H32M16LFBF-6 IT:C is a DDR3 SDRAM memory chip with a pin count of 78.
### Key Functions:
- Memory Type: DDR3 SDRAM
- Organization: 32 Meg x 16 bits
- Interface: Synchronous dynamic RAM that operates at DDR speed.
- Data Rate: The "-6" in the part number indicates that it has a maximum speed of 1066 Mbps.
- Power Supply: Typically operates at 1.5V.

### Pin Functions:
- Data Pins: For data input/output (DQ pins).
- Address Pins: To select memory locations (A pins).
- Control Pins: Include chip enable (CE), write enable (WE), and clock (CK).
- Power and Ground Pins: For providing power and returning ground.
- Baud Select Pins: For selecting bank addresses.
This combination allows for efficient data storage and retrieval in computing applications.

Manufacturer

The manufacturer of the MT46H32M16LFBF-6 IT:C is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces innovative memory technologies for a wide range of applications, from consumer electronics to enterprise systems and automotive solutions. The company is known for its commitment to research and development, continually advancing memory technology to meet the evolving needs of the market.

Application

The MT46H32M16LFBF-6 IT:C is a DDR3 DRAM memory chip commonly used in applications such as consumer electronics, laptops, servers, and networking devices. It is suitable for high-performance computing tasks, graphics processing, and data-intensive applications due to its high capacity and speed. Additionally, it can be employed in industrial automation and telecommunications systems.

Equivalent

The MT46H32M16LFBF-6 IT:C is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83BFR
2. Samsung K4B4G1646D
3. Micron MT41J128M16HA
Ensure compatibility with specifications like density, speed, and voltage when selecting alternatives.

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