圖片僅供參考
MT46H16M16LFBF-6:H
IC DRAM 256MBIT PARALLEL 60VFBGA
- 製造商
- 製造商。 部分 #MT46H16M16LFBF-6:H
- 包 60-VFBGA
- 資料表
- 有現貨的4182
100%原創; 新
24小時準備發貨
365天保修
RFQ&; 獲得更多折扣
規格
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| MemorySize | 256Mb (16M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 166 MHz |
| WriteCycleTime-WordPage | 12ns |
| AccessTime | 5 ns |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 60-VFBGA |
概述
Description
MT46H16M16LFBF-6:H is a Micron Mobile DDR2 SDRAM device. Quick intro:
- Capacity and organization: 256 Mb total, organized as 16M x 16-bit (16Mx16).
- Speed and interface: -6 speed grade (about 6 ns), DDR2-like operation up to ~333 MT/s.
- Voltage: 1.8 V I/O/core (typical for mobile DDR2).
- Package: Lead-free FBGA (LFBF).
- Banks and features: Multi-bank, synchronous operation with standard DDR2 features (burst, refresh, etc.).
- Use case: Designed for mobile/low-profile systems (laptops, tablets); typically used alongside a memory controller and may be paired to form wider data paths.
- Notes: For exact timings (tRC, tRCD, tRP, etc.) and electrical details, consult the official Micron MT46H16M16LFBF-6:H datasheet.
- Capacity and organization: 256 Mb total, organized as 16M x 16-bit (16Mx16).
- Speed and interface: -6 speed grade (about 6 ns), DDR2-like operation up to ~333 MT/s.
- Voltage: 1.8 V I/O/core (typical for mobile DDR2).
- Package: Lead-free FBGA (LFBF).
- Banks and features: Multi-bank, synchronous operation with standard DDR2 features (burst, refresh, etc.).
- Use case: Designed for mobile/low-profile systems (laptops, tablets); typically used alongside a memory controller and may be paired to form wider data paths.
- Notes: For exact timings (tRC, tRCD, tRP, etc.) and electrical details, consult the official Micron MT46H16M16LFBF-6:H datasheet.
Features
MT46H16M16LFBF-6:H is a 256Mb DDR2 SDRAM with 16M x 16 organization. Key features:
- 256 Mb total, organized 16M x 16
- DDR2 SDRAM, 1.8V I/O (Vcc/Vdd)
- Speed grade: -6 (high-speed grade)
- Banks: 4; Burst length 4/8; Burst type: sequential
- Fully synchronous with clock; supports auto refresh and partial array refresh
- ZQ calibration for impedance tuning; on-die termination options
- Deep power-down mode for low power
- Lead-free, RoHS-compliant FBGA package (LFBF)
- Temperature options: commercial/industrial versions (check datasheet for exact range)
Note: exact timings and operating temperature depend on the specific grade and configuration; refer to the JEDEC DDR2-STD and Micron datasheet for precise specs.
- 256 Mb total, organized 16M x 16
- DDR2 SDRAM, 1.8V I/O (Vcc/Vdd)
- Speed grade: -6 (high-speed grade)
- Banks: 4; Burst length 4/8; Burst type: sequential
- Fully synchronous with clock; supports auto refresh and partial array refresh
- ZQ calibration for impedance tuning; on-die termination options
- Deep power-down mode for low power
- Lead-free, RoHS-compliant FBGA package (LFBF)
- Temperature options: commercial/industrial versions (check datasheet for exact range)
Note: exact timings and operating temperature depend on the specific grade and configuration; refer to the JEDEC DDR2-STD and Micron datasheet for precise specs.
Package
Lead-Free Fine-pitch Ball Grid Array (LFBGA) package.
Pinout
- Pin count: 84-ball LFBGA (84 pins)
- Function: 256-Mbit Mobile DDR2 SDRAM, organized as 16M x 16 (16-bit wide), 4 banks, 1.8V, synchronous DRAM.
- Function: 256-Mbit Mobile DDR2 SDRAM, organized as 16M x 16 (16-bit wide), 4 banks, 1.8V, synchronous DRAM.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, etc.).
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, etc.).
Application
MT46H16M16LFBF-6:H is a 16M × 16-bit low‑power mobile DRAM (Micron). Typical applications:
- Main memory for handheld/embedded systems
- Mobile devices (phones, PDAs, tablets, portable media players)
- Digital cameras/camcorders and portable gaming devices
- Embedded controllers, IoT, compact consumer electronics
- Small-form-factor notebooks or memory buffers in compact systems
- Main memory for handheld/embedded systems
- Mobile devices (phones, PDAs, tablets, portable media players)
- Digital cameras/camcorders and portable gaming devices
- Embedded controllers, IoT, compact consumer electronics
- Small-form-factor notebooks or memory buffers in compact systems
Equivalent
To give exact equivalents, I need the device specs. MT46H16M16LFBF-6:H is Micron’s 16M×16 memory, but the DDR type (DDR2 or DDR3), density, speed grade (-6), and package matter for cross-references. Please confirm:
- Memory type (DDR2 or DDR3)
- Density/organization (e.g., 256 Mb, 16M×16)
- Temperature range and package
With that, I can provide cross-ref parts from Samsung, Hynix, Nanya, etc.
- Memory type (DDR2 or DDR3)
- Density/organization (e.g., 256 Mb, 16M×16)
- Temperature range and package
With that, I can provide cross-ref parts from Samsung, Hynix, Nanya, etc.
船舶
運輸管道我們
通過DHL、FedEx、TNT、UPS或您選擇的任何其他貨運代理提供全球運輸服務。
運費參攷(DHL/FedEx):
動態主要裝載: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為2-5個工作日。
聯邦快遞: 運費從25美元到40美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
不斷電供應系統: 運費從25美元到45美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
三硝基甲苯: 運費從25美元到65美元(0.5公斤)不等,預計交貨時間為3-7個工作日。
增强型短消息: 運費從30美元到50美元(0.5公斤)不等,預計交貨時間為7-15個工作日。
掛號: 運費為2-4美元(0.1公斤),預計交貨時間為5-20個工作日。
支付
Payment Methods
付款條件為100%預付。
現時,我們只接受以下付款方式:
1. 貝寶
2. 信用卡/借記卡
3. 電匯
類似的
-
MX25V1635FZNQ03
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25U6435FM2I-10G
Macronix
-
MX29F040CTI-70G
Macronix
-
MX29LV640ETTI-70G
Macronix
-
MX25L25735FMI-10G
Macronix