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MT41K256M16TW-107:P TR
DRAM DDR3 4G 256MX16 FBGA
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| Packaging | MouseReel |
| Standard Pack Qty | 2000 |
概述
Description
The MT41K256M16TW-107:P TR is a type of DRAM memory module manufactured by Micron Technology. Specifically, it is a 4Gb DDR3 SDRAM chip organized as 256M x 16 bits, designed for high-performance computing applications. The "107" in the part number indicates a specific speed grade, optimized for operation at a frequency of 1333 MT/s (mega-transfers per second).
This DRAM is typically used in various electronic devices, including computers and servers, where it provides efficient data storage and quick access times. The "P" suffix denotes the part is in a specific package type, while "TR" indicates that the part is available in tape and reel packaging, suitable for automated assembly processes.
Key features include low power consumption, high bandwidth, and compatibility with industry-standard DDR3 interfaces. It is ideal for applications requiring reliable memory performance and efficiency, making it a popular choice in the market.
This DRAM is typically used in various electronic devices, including computers and servers, where it provides efficient data storage and quick access times. The "P" suffix denotes the part is in a specific package type, while "TR" indicates that the part is available in tape and reel packaging, suitable for automated assembly processes.
Key features include low power consumption, high bandwidth, and compatibility with industry-standard DDR3 interfaces. It is ideal for applications requiring reliable memory performance and efficiency, making it a popular choice in the market.
Features
The MT41K256M16TW-107:P TR is a DDR3 SDRAM memory chip manufactured by Micron Technology. Key features include:
1. Density: 4GB (256M x 16 bits).
2. Data Rate: Operates at a speed of 1066 MT/s.
3. Configuration: It is organized as 256M x 16 (16-bit wide).
4. Voltage: Operates at a low voltage of 1.5V, ensuring power efficiency.
5. Package Type: Comes in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
6. Row and Column Addresses: 13-bit row and 10-bit column addressing.
7. Burst Length: Supports burst lengths of 4 and 8.
8. Temperature Range: Designed for commercial temperature range (-40°C to +85°C).
9. Features: Includes features like on-die termination (ODT) and an integrated self-refresh mode.
10. Applications: Suitable for various applications including laptops, desktops, and servers.
This chip is optimized for performance and energy efficiency in memory-intensive applications.
1. Density: 4GB (256M x 16 bits).
2. Data Rate: Operates at a speed of 1066 MT/s.
3. Configuration: It is organized as 256M x 16 (16-bit wide).
4. Voltage: Operates at a low voltage of 1.5V, ensuring power efficiency.
5. Package Type: Comes in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
6. Row and Column Addresses: 13-bit row and 10-bit column addressing.
7. Burst Length: Supports burst lengths of 4 and 8.
8. Temperature Range: Designed for commercial temperature range (-40°C to +85°C).
9. Features: Includes features like on-die termination (ODT) and an integrated self-refresh mode.
10. Applications: Suitable for various applications including laptops, desktops, and servers.
This chip is optimized for performance and energy efficiency in memory-intensive applications.
Package
The MT41K256M16TW-107:P TR is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This compact package type is designed for high-density applications, providing efficient thermal performance and space-saving benefits for various electronic devices.
Pinout
The MT41K256M16TW-107:P TR is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 256 Meg x 16 bits, providing a total capacity of 4 Gb.
Key functions of the chip include:
- Data Storage: It serves as a volatile memory solution for various applications, storing data temporarily during operation.
- Memory Interface: It uses a DDR3 interface for high-speed data transfer, supporting clock speeds of up to 1600 MT/s.
- Power Management: The chip operates at a supply voltage of 1.5V, with low power consumption features to enhance energy efficiency.
- Signal Integrity: It includes features for improved signal integrity and reduced noise, ensuring reliable performance.
This memory device is commonly used in consumer electronics, computing devices, and networking equipment.
Key functions of the chip include:
- Data Storage: It serves as a volatile memory solution for various applications, storing data temporarily during operation.
- Memory Interface: It uses a DDR3 interface for high-speed data transfer, supporting clock speeds of up to 1600 MT/s.
- Power Management: The chip operates at a supply voltage of 1.5V, with low power consumption features to enhance energy efficiency.
- Signal Integrity: It includes features for improved signal integrity and reduced noise, ensuring reliable performance.
This memory device is commonly used in consumer electronics, computing devices, and networking equipment.
Manufacturer
The manufacturer of the MT41K256M16TW-107:P TR is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various markets, such as computing, mobile, networking, and automotive, providing innovative memory products that enhance performance in electronic devices. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its commitment to research and development, driving advancements in memory technology.
Application
The MT41K256M16TW-107:P TR is a 4GB DDR3 SDRAM memory chip primarily used in various applications including consumer electronics (such as smartphones and tablets), computers, servers, networking equipment, and industrial devices. Its high-speed data processing capabilities make it suitable for tasks requiring efficient memory performance, such as gaming, multimedia, and data-intensive applications.
Equivalent
The MT41K256M16TW-107:P TR is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83CFR - DDR3 2GB 256Mx16
2. Samsung K4B4G1646D - DDR3 2GB 256Mx16
3. Micron MT41K256M16HA-125 - DDR3 2GB 256Mx16
Ensure compatibility with your specific application requirements before substituting.
1. Hynix H5TQ2G83CFR - DDR3 2GB 256Mx16
2. Samsung K4B4G1646D - DDR3 2GB 256Mx16
3. Micron MT41K256M16HA-125 - DDR3 2GB 256Mx16
Ensure compatibility with your specific application requirements before substituting.
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