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MT41K256M16TW-107:P
IC DRAM 4GBIT PAR 96FBGA
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規格
| Part Status | Active |
| Base Product Number | MT41K256M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (8x14) |
| Packaging | Tray |
| Access Time | 20 ns |
概述
Description
The MT41K256M16TW-107:P is a DDR3 SDRAM memory chip developed by Micron Technology. It features a 2GB capacity, organized as 256M x 16 bits, and operates at a data rate of 1066 MT/s (megatransfers per second). This memory chip is designed for various applications, including consumer electronics, computers, and networking devices.
Key specifications include a 1.5V supply voltage, a 64-bit data bus, and a standard SO-DIMM package for easy integration into systems. It supports burst lengths of 4 and 8, and has various features like on-die termination (ODT) and self-refresh capabilities for power efficiency.
The “P” suffix indicates that it is a Pb-free product, aligning with environmental regulations. Overall, the MT41K256M16TW-107:P is a reliable choice for enhancing system performance due to its high bandwidth and efficiency in data handling.
Key specifications include a 1.5V supply voltage, a 64-bit data bus, and a standard SO-DIMM package for easy integration into systems. It supports burst lengths of 4 and 8, and has various features like on-die termination (ODT) and self-refresh capabilities for power efficiency.
The “P” suffix indicates that it is a Pb-free product, aligning with environmental regulations. Overall, the MT41K256M16TW-107:P is a reliable choice for enhancing system performance due to its high bandwidth and efficiency in data handling.
Features
The MT41K256M16TW-107:P is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a density of 4GB, organized as 256 Meg x 16 bits. Key specifications include:
- Data Rate: Supports DDR3-1066/1333 speeds, with a maximum clock frequency of 667 MHz.
- Voltage: Operates at a low voltage of 1.5V, enhancing energy efficiency.
- Configuration: 8 internal banks, allowing for high-speed data access and improved performance.
- Package Type: Offered in a 78-ball FBGA package, suitable for various compact applications.
- Temperature Range: Supports commercial temperature ranges (0°C to +95°C) for reliability in typical environments.
- Features: Includes features like on-die termination (ODT) and various modes for efficient power management.
This memory chip is commonly used in consumer electronics, laptops, and various computing applications that require reliable and efficient memory performance.
- Data Rate: Supports DDR3-1066/1333 speeds, with a maximum clock frequency of 667 MHz.
- Voltage: Operates at a low voltage of 1.5V, enhancing energy efficiency.
- Configuration: 8 internal banks, allowing for high-speed data access and improved performance.
- Package Type: Offered in a 78-ball FBGA package, suitable for various compact applications.
- Temperature Range: Supports commercial temperature ranges (0°C to +95°C) for reliability in typical environments.
- Features: Includes features like on-die termination (ODT) and various modes for efficient power management.
This memory chip is commonly used in consumer electronics, laptops, and various computing applications that require reliable and efficient memory performance.
Package
The MT41K256M16TW-107:P is packaged in a DDR3 SDRAM 78-ball TFBGA (Thin Fine Ball Grid Array) package. This compact form factor is commonly used for memory chips, allowing for efficient space utilization on circuit boards.
Pinout
The MT41K256M16TW-107:P is a DDR3 SDRAM memory chip with a pin count of 78. It is configured as a 256 Meg x 16 bits DRAM device. The primary function of this component is to provide high-speed memory storage for various electronic applications, including computers and other digital systems. It operates at a data rate of 1600 MT/s and is designed to support a wide range of operating conditions. The chip features a variety of pins for power, ground, data input/output, and control signals, facilitating communication with the memory controller in the host system.
Manufacturer
The manufacturer of the MT41K256M16TW-107:P is Micron Technology, Inc. Micron is a leading American company that specializes in the design and manufacture of memory and storage solutions, including DRAM, NAND, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron is a key player in the semiconductor industry, serving various sectors such as computing, mobile, automotive, and data center markets. The company focuses on innovation and technology development to provide high-performance memory products that meet the growing demands of data-intensive applications.
Application
The MT41K256M16TW-107:P is a 4Gb DDR3 SDRAM memory chip used in various applications, including laptops, desktops, servers, and networking equipment. It supports high-performance computing, graphics applications, and embedded systems. Its low power consumption makes it suitable for mobile devices and energy-efficient applications. Additionally, it is used in consumer electronics, automotive systems, and industrial equipment where reliable data storage and fast access are essential.
Equivalent
The MT41K256M16TW-107:P chip is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA
4. Nanya NT5CB256M16E
Ensure compatibility with your specific application and check datasheets for detailed specifications.
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA
4. Nanya NT5CB256M16E
Ensure compatibility with your specific application and check datasheets for detailed specifications.
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