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MT41K256M16TW-093:P

Name: MT41K256M16TW-093:P
Rating: 4.7 (12 reviews)

IC DRAM 4GBIT PAR 96FBGA

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規格

Part Status	Active
Base Product Number	MT41K256M16
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	DRAM
Technology	SDRAM - DDR3L
Memory Size	4Gbit
Memory Organization	256M x 16
Memory Interface	Parallel
Clock Frequency	1.066 GHz
Voltage - Supply	1.283V ~ 1.45V
Operating Temperature	0°C ~ 95°C (TC)
Mounting Type	Surface Mount
Package	96-TFBGA
Supplier Device Package	96-FBGA (8x14)
Packaging	Tray
Access Time	20 ns

概述

Description

The MT41K256M16TW-093:P is a 4Gb (Gigabit) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip produced by Micron Technology. It features a 16-bit data width and operates at a voltage of 1.5V. This memory module is designed for use in a variety of applications, including mobile devices, laptops, and embedded systems.
Key specifications include a high-speed data rate of up to 1600 MT/s (megatransfers per second), making it suitable for performance-intensive tasks. The "TW" in the part number indicates a specific package type (TDFN) and design, while the "093" signifies the revision or manufacturing process. The part is RoHS compliant, ensuring it meets environmental standards.
This memory component supports various operating modes such as burst read/write and has built-in features for power management, enhancing efficiency in battery-operated devices. Overall, the MT41K256M16TW-093:P is a reliable choice for modern electronic applications requiring high-performance memory solutions.

Features

The MT41K256M16TW-093:P is a DDR3 SDRAM memory chip from Micron Technology, featuring a 256Mb density organized in 16 bits (16Mx16). Key features include:
1. Speed: Operates at a data rate of up to 1866 MT/s.
2. Voltage: Works at a supply voltage of 1.5V, with a low power option (1.35V) available.
3. Package: Available in a 78-ball TFBGA package, facilitating compact design in various applications.
4. Latency: Offers CAS latency options, typically CL13 or CL15, enhancing performance for different applications.
5. Refresh: Supports self-refresh and extended self-refresh modes for power efficiency.
6. Compatibility: Compatible with JEDEC standards, ensuring widespread usability in various computing environments.
7. Temperature Range: Designed for a commercial temperature range, making it suitable for a wide variety of consumer electronics.
This chip is ideal for use in laptops, desktops, and other devices requiring efficient memory performance.

Package

The MT41K256M16TW-093:P is a DRAM chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. It features a compact design suitable for high-density applications in mobile devices and computing systems.

Manufacturer

The manufacturer of the MT41K256M16TW-093:P is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a wide range of memory products for various applications, including computing, mobile devices, and automotive systems. The company is known for its innovation in memory technology and plays a significant role in the semiconductor industry, serving customers across multiple sectors. Micron is publicly traded on the NASDAQ stock exchange under the ticker symbol "MU."

Application

The MT41K256M16TW-093:P is a 4Gb DDR3 SDRAM memory chip used in various applications, including consumer electronics, laptops, desktops, servers, and networking devices. Its high-density, low-power features make it suitable for mobile devices, embedded systems, and industrial applications where efficient data processing and storage are essential.

Equivalent

The MT41K256M16TW-093:P is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83BFR
2. Micron MT41K256M16HA-125
3. Samsung K4B4G1646F-BCK0
4. Nanya NT5CB256M16DP-125
Ensure to check specifications like speed, voltage, and package type for compatibility.