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MT41K256M16LY-107:N
IC DRAM 4GBIT PAR 96FBGA
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規格
| Part Status | Obsolete |
| Base Product Number | MT41K256M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (7.5x13.5) |
| Packaging | Tray |
| Access Time | 20 ns |
概述
Description
The MT41K256M16LY-107:N is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip manufactured by Micron Technology. It features a configuration of 256 Meg x 16 bits, resulting in a total capacity of 4 gigabits. This memory chip operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (megatransfers per second), making it suitable for a variety of applications that require efficient and high-speed memory performance.
The "107" in the part number indicates the speed grade, while the "N" denotes that it is a lead-free, RoHS-compliant package, emphasizing environmental considerations. The MT41K256M16LY-107:N is typically used in applications such as computers, servers, and other electronic devices that demand reliable and fast memory solutions. Its features include low power consumption, high bandwidth, and improved performance over previous DDR generations, making it a popular choice in modern memory system designs.
The "107" in the part number indicates the speed grade, while the "N" denotes that it is a lead-free, RoHS-compliant package, emphasizing environmental considerations. The MT41K256M16LY-107:N is typically used in applications such as computers, servers, and other electronic devices that demand reliable and fast memory solutions. Its features include low power consumption, high bandwidth, and improved performance over previous DDR generations, making it a popular choice in modern memory system designs.
Features
The MT41K256M16LY-107:N is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) module manufactured by Micron Technology. Here are its key features:
1. Density: 4Gb (Gigabits) per chip, organized as 256Mx16.
2. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
3. Speed Grade: Operates at 1066 MT/s (megatransfers per second).
4. Voltage: Requires a supply voltage of 1.5V, with a low power consumption.
5. Data Rate: Supports a data rate of up to 8.5GB/s.
6. Timing Parameters: Features CAS latency options, typically CL7, CL8, or CL9.
7. Temperature Range: Commercial temperature range from 0°C to 95°C.
8. Compatibility: Designed for applications like consumer electronics, networking, and computing.
This memory module is suitable for high-performance applications requiring reliable data storage and access speed.
1. Density: 4Gb (Gigabits) per chip, organized as 256Mx16.
2. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package.
3. Speed Grade: Operates at 1066 MT/s (megatransfers per second).
4. Voltage: Requires a supply voltage of 1.5V, with a low power consumption.
5. Data Rate: Supports a data rate of up to 8.5GB/s.
6. Timing Parameters: Features CAS latency options, typically CL7, CL8, or CL9.
7. Temperature Range: Commercial temperature range from 0°C to 95°C.
8. Compatibility: Designed for applications like consumer electronics, networking, and computing.
This memory module is suitable for high-performance applications requiring reliable data storage and access speed.
Package
The MT41K256M16LY-107:N is packaged in a 78-ball, 8x8mm, TFBGA (Thin Fine Ball Grid Array) configuration. This type of packaging is commonly used for memory devices, providing a compact design and efficient thermal performance.
Pinout
The MT41K256M16LY-107:N is a DDR3 SDRAM memory chip with a pin count of 78 pins. It is organized as 256 Meg x 16 bits and operates at a maximum clock frequency of 1066 MT/s.
The primary functions of this chip include data storage and retrieval, featuring a double data rate interface, which allows it to transfer data on both the rising and falling edges of the clock signal. It supports various memory operations such as read, write, and refresh cycles, making it suitable for applications in computers, servers, and other electronic devices that require high-speed memory. Additionally, it incorporates features like variable burst lengths and on-die termination for improved signal integrity.
The primary functions of this chip include data storage and retrieval, featuring a double data rate interface, which allows it to transfer data on both the rising and falling edges of the clock signal. It supports various memory operations such as read, write, and refresh cycles, making it suitable for applications in computers, servers, and other electronic devices that require high-speed memory. Additionally, it incorporates features like variable burst lengths and on-die termination for improved signal integrity.
Manufacturer
The manufacturer of the MT41K256M16LY-107:N is Micron Technology, Inc. Micron is an American semiconductor company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for producing DRAM, NAND flash memory, and other related products used in computing devices, mobile devices, and data storage. The company serves a variety of industries, including consumer electronics, automotive, and enterprise storage, and is recognized as one of the leading players in the global semiconductor market.
Application
The MT41K256M16LY-107:N is a DDR3 SDRAM memory chip primarily used in applications like consumer electronics, laptops, desktops, networking equipment, and servers. Its high-density and low-power features make it suitable for mobile devices and embedded systems, enhancing performance in tasks such as gaming, multimedia processing, and data-intensive applications.
Equivalent
The MT41K256M16LY-107:N chip, a DDR3 SDRAM, has several equivalent products, including:
1. Hynix H5TQ2G83EFR-PBC
2. Samsung K4B4G1646D-BCK0
3. Micron MT41K256M16HA-125
4. Nanya NT5CC256M16DP-DI
Ensure compatibility with your specific application before substitution.
1. Hynix H5TQ2G83EFR-PBC
2. Samsung K4B4G1646D-BCK0
3. Micron MT41K256M16HA-125
4. Nanya NT5CC256M16DP-DI
Ensure compatibility with your specific application before substitution.
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