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MT41K256M16HA-125IT:E
1.283V~1.45V 4Gbit 800MHz DDR3L SDRAM BGA Memory (ICs) RoHS
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規格
| Packaging | BGA |
| Clock Frequency | 800MHz |
| Memory Format | DDR3L SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.283V~1.45V |
概述
Description
The MT41K256M16HA-125IT:E is a DRAM memory component manufactured by Micron Technology. It is part of the DDR3L (Double Data Rate 3 Low Voltage) SDRAM family. This memory model features a storage capacity of 4 gigabits (Gb), organized as 256M words x 16 bits per word. The "125" in its designation indicates a clock speed of approximately 1600 megatransfers per second (MT/s), with a corresponding CAS latency of 11 cycles at this speed.
Key features include a low operating voltage of 1.35V, which reduces power consumption and heat generation compared to standard DDR3 memory running at 1.5V. This makes it suitable for energy-efficient applications. The "IT" in its part number signifies that it is rated for industrial temperature ranges, typically from -40°C to +95°C, making it ideal for use in harsh environments.
The MT41K256M16HA-125IT:E is commonly used in a variety of applications, including consumer electronics, computers, and industrial systems, where efficient memory performance is required. The "E" suffix indicates a specific configuration or version within Micron's product lineup.
Key features include a low operating voltage of 1.35V, which reduces power consumption and heat generation compared to standard DDR3 memory running at 1.5V. This makes it suitable for energy-efficient applications. The "IT" in its part number signifies that it is rated for industrial temperature ranges, typically from -40°C to +95°C, making it ideal for use in harsh environments.
The MT41K256M16HA-125IT:E is commonly used in a variety of applications, including consumer electronics, computers, and industrial systems, where efficient memory performance is required. The "E" suffix indicates a specific configuration or version within Micron's product lineup.
Features
The MT41K256M16HA-125IT:E is a DRAM component from Micron Technology, specifically a part of the DDR3 SDRAM family. Key features include:
1. Density and Speed: The module has a density of 4Gb (gigabits) and supports a data rate of 1600 MT/s (megatransfers per second), which corresponds to a clock speed of 800 MHz.
2. Organization: The chip is organized as 256M x 16, meaning it consists of 256 million rows by 16 data bits per row.
3. Voltage: It operates at a standard voltage of 1.35V, which classifies it as a DDR3L (low voltage) component, contributing to reduced power consumption.
4. Temperature Range: The "IT" in the part number indicates industrial temperature range, supporting operation from -40°C to 95°C.
5. Packaging: The device comes in a standard FBGA (Fine-Pitch Ball Grid Array) package, enhancing its compatibility with various designs.
6. Features: It supports standard DDR3 features such as auto-refresh, self-refresh modes, and power-down mode, which help manage power and ensure data integrity.
These features make it suitable for a variety of high-performance and reliable memory applications in industrial environments.
1. Density and Speed: The module has a density of 4Gb (gigabits) and supports a data rate of 1600 MT/s (megatransfers per second), which corresponds to a clock speed of 800 MHz.
2. Organization: The chip is organized as 256M x 16, meaning it consists of 256 million rows by 16 data bits per row.
3. Voltage: It operates at a standard voltage of 1.35V, which classifies it as a DDR3L (low voltage) component, contributing to reduced power consumption.
4. Temperature Range: The "IT" in the part number indicates industrial temperature range, supporting operation from -40°C to 95°C.
5. Packaging: The device comes in a standard FBGA (Fine-Pitch Ball Grid Array) package, enhancing its compatibility with various designs.
6. Features: It supports standard DDR3 features such as auto-refresh, self-refresh modes, and power-down mode, which help manage power and ensure data integrity.
These features make it suitable for a variety of high-performance and reliable memory applications in industrial environments.
Package
The MT41K256M16HA-125 IT:E is a DRAM chip from Micron's DDR3L product line. It features a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, which provides a compact, reliable connection for high-performance memory applications. The "IT" indicates an industrial temperature range, and "E" denotes a specific revision or variant within the product line.
Pinout
The MT41K256M16HA-125IT:E is a DRAM chip from Micron's DDR3 SDRAM family. It typically comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. The device has a 256Mb x 16 configuration, which totals 4Gb (gigabits) of memory.
Pin Count:
- The package is a 96-ball FBGA.
Key Functions:
- Data I/O: The chip supports a data bus width of 16 bits.
- Clock Inputs: Differential clock inputs to synchronize command and data input.
- Command and Address Inputs: Used to input commands and addresses for read/write operations.
- Control Pins: Include inputs for row address strobe (RAS), column address strobe (CAS), and write enable (WE) signals.
- Power Pins: VDD and VDDQ for core and I/O power supply, respectively.
- Other Pins: Include chip select (CS), clock enable (CKE), on-die termination (ODT), and data mask (DM).
This DRAM is used in applications requiring efficient memory performance, such as computers and networking equipment.
Pin Count:
- The package is a 96-ball FBGA.
Key Functions:
- Data I/O: The chip supports a data bus width of 16 bits.
- Clock Inputs: Differential clock inputs to synchronize command and data input.
- Command and Address Inputs: Used to input commands and addresses for read/write operations.
- Control Pins: Include inputs for row address strobe (RAS), column address strobe (CAS), and write enable (WE) signals.
- Power Pins: VDD and VDDQ for core and I/O power supply, respectively.
- Other Pins: Include chip select (CS), clock enable (CKE), on-die termination (ODT), and data mask (DM).
This DRAM is used in applications requiring efficient memory performance, such as computers and networking equipment.
Manufacturer
The MT41K256M16HA-125IT:E is a DRAM chip manufactured by Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of semiconductor devices, primarily focusing on memory and storage solutions. The company designs and manufactures a wide array of products, including dynamic random-access memory (DRAM), NAND flash memory, and other solid-state drives (SSDs). Micron serves a diverse range of industries such as computing, consumer electronics, automotive, and mobile communications, providing essential components for both personal and enterprise-level technologies. Known for innovation and leading-edge technology, Micron plays a significant role in advancing memory and storage capabilities across the global tech landscape.
Application
The MT41K256M16HA-125IT:E is a DDR3L SDRAM chip commonly used in applications requiring efficient memory solutions. Its applications include consumer electronics like laptops and tablets, networking equipment, automotive systems, and industrial devices. It is valued for its low power consumption and high performance, making it ideal for environments demanding reliability and speed.
Equivalent
The MT41K256M16HA-125IT:E is a DDR3L SDRAM chip from Micron, commonly used in computing applications. Equivalent products include the H5TQ4G63AFR from SK Hynix, K4B4G1646D from Samsung, and the AS4C256M16D3L from Alliance Memory. These alternatives offer similar performance and specifications, such as 4Gb density, 16-bit width, and compatibility with DDR3L standards. Always verify pin compatibility and electrical characteristics when considering alternatives.
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