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MT41K1G4RH-125:E

Name: MT41K1G4RH-125:E
Rating: 4.7 (12 reviews)

IC DRAM 4GBIT PARALLEL 78FBGA

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製造商。部分 #MT41K1G4RH-125:E
包 78-TFBGA
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規格

Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR3
MemorySize	4Gb (1G x 4)
MemoryInterface	Parallel
ClockFrequency	800 MHz
AccessTime	13.75 ns
Voltage-Supply	1.283V ~ 1.45V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	78-TFBGA

概述

Description

MT41K1G4RH-125:E is a Micron Technology DRAM device. It belongs to the MT41K1G4RH family and represents a 1 Gbit density, x4 data-width DRAM die used on memory modules or in devices needing DRAM. The “-125” is the speed grade, and the “:E” suffix denotes RoHS-compliant (lead-free) packaging. It typically operates at DDR-type voltages and includes multiple banks (commonly 8). For exact specs—organization, timing, voltage, temperature rating, and packaging—consult the official Micron datasheet or product page.

Features

MT41K1G4RH-125:E is a Micron 1 Gbit DDR3L SDRAM device with x4 data width. Key features (typical):
- Density/organization: 1 Gbit total, x4 data bus
- Technology: DDR3L SDRAM (low voltage)
- Banks: 8 internal banks
- Burst: Burst length 4/8
- Voltage: 1.35 V (DDR3L)
- Temperature: Extended range (-40°C to 85°C)
- Refresh: Auto/self-refresh support
- Interface: Synchronous DDR3L-compatible interface
- Packaging: Micron standard small-footprint package (e.g., FBGA)
- Speed grade: -125 (specific MT/s/clock per datasheet)
Note: Exact timings (CL, tRCD, tRP), MT/s, and packaging details should be verified in the official MT41K1G4RH-125:E datasheet.

Package

96-ball FBGA package (FBGA-96), typically 12×16 mm.

Pinout

- Pin count: 84-ball FBGA package (84 pins)
- Function: Micron MT41K1G4RH-125:E is a 1 Gigabit DDR3L SDRAM device with x4 data width (1Gb per device). It is a synchronous memory with 8 banks, using standard DDR3 control/command signals (CS, CK, CK#, CKE, RAS, CAS, WE) and 4 DQ data pins; operates at low voltage (DDR3L).

Manufacturer

- Manufacturer: Micron Technology, Inc.
- Company type: An American multinational semiconductor company that designs and manufactures memory and storage technologies (DRAM, NAND flash, SSDs, etc.).

Application

Typical applications include server and data-center memory (DIMMs/LRDIMMs), workstation and HPC systems, networking and telecom equipment (switches/routers), storage controllers and RAID appliances, graphics/compute accelerators, and embedded/industrial systems requiring high-density, reliable DRAM.

Equivalent

MT41K1G4RH-125:E is Micron’s 1 Gb × 4 DDR3 SDRAM. There isn’t a public direct cross-reference listing. To find equivalents, look for DDR3-1600 1 Gb × 4 devices from other vendors (e.g., SK hynix, Samsung, Winbond/Nanya) with the same timing (125). Use Micron’s cross-reference tool or distributor catalogs to identify matches. Verify exact organization, voltage, timings (tRCD/tRP/tRAS), and package.