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MT41K128M16HA-15E:D

Name: MT41K128M16HA-15E:D
Rating: 4.7 (12 reviews)

IC DRAM 2GBIT PARALLEL 96FBGA

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製造商。部分 #MT41K128M16HA-15E:D
包 96-TFBGA
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規格

Supplier	Micron Technology Inc.
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR3L
MemorySize	2Gb (128M x 16)
MemoryInterface	Parallel
ClockFrequency	667 MHz
AccessTime	13.5 ns
Voltage-Supply	1.283V ~ 1.45V
OperatingTemperature	0°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	96-TFBGA

概述

Description

MT41K128M16HA-15E:D is Micron’s DDR3 SDRAM device. It is a high-density memory die with:
- Capacity/organization: 2 Gb total, 128M x 16 (16-bit wide data bus)
- Banks: x8/x16 DDR3 typically uses 8 banks
- Interface/voltage: DDR3 signaling, roughly 1.5V supply
- Performance: speed grade -15E indicates a specific timing/speed spec within the DDR3 family (exact data rate depends on the system’s memory controller); the suffix encodes voltage, timing, and temp/packaging details
- Use: common as a component in memory modules (DIMMs/SODIMMs) or embedded memory subsystems
For precise electrical characteristics, timings, operating temperature range, and maximum frequency, consult the Micron MT41K128M16HA-15E:D datasheet.

Features

MT41K128M16HA-15E:D is a Micron DDR3 SDRAM device. Key features:
- Density/organization: 2 Gb per device (128M x 16)
- Banks: 8-bank DDR3
- Interface: DDR3 with 8n prefetch; synchronous with CK signals
- I/O and power: VDD/VDDQ = 1.5 V (standard DDR3); unbuffered, non-ECC
- Speed grade: -15E (logo indicates performance bin; actual data rate depends on system)
- Performance: supports high-speed DDR3 operation (typical module designs achieve ~1066–1600 MT/s depending on grade and board)
- On-die features: ZQ calibration, On-Die Termination (ODT), DLL
- Refresh/power: PASR (partial array refresh), standard self-refresh, deep power-down options
- Packaging: standard DDR3 device package (used in memory modules and boards)
- Applications: selectable for desktop/server DIMMs and other systems needing a 2 Gb DDR3 die
Note: Exact speed (MT/s), voltage tolerances, and packaging variants depend on the specific lot and board design; consult the datasheet for precise values.

Package

Fine-pitch FBGA (Fine-pitch Ball Grid Array), 96-ball package.

Pinout

- Pin count: 96 pins (96-ball FBGA package).
- Function: Micron MT41K128M16HA-15E:D is a DDR3 SDRAM device, 2 Gb total capacity, organized as 128M × 16 (i.e., 16-bit data width) for use as system memory.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- About the company: An American multinational semiconductor company and one of the world’s leading memory manufacturers, designing and producing DRAM, NAND Flash and other memory devices. Headquartered in Boise, Idaho; publicly traded on NASDAQ (ticker MU).

Application

- Main system memory for desktops, laptops (DIMMs/SO-DIMMs) and servers/workstations.
- OEM memory components for embedded/industrial applications and telecom/networking equipment requiring high-density DDR3 DRAM.

Equivalent

MT41K128M16HA-15E:D is a Micron 2 Gb DDR3L SDRAM (128M × 16) at DDR3-1333, 1.35 V. Equivalents are other vendors’ 2 Gb DDR3L ×16 devices with the same speed/voltage (e.g., from Samsung, SK hynix, Nanya). Exact replacement part numbers depend on packaging and revision; use a cross-reference (Micron tool or supplier DB) to match PN, package, and timing.